Tin Disk Single Crystal

Tin Disk Single Crystal provides high purity, excellent ductility, and uniform electrical and thermal conductivity in a precisely machined circular form, ensuring consistent performance in high-precision applications. The defect-free crystalline structure minimizes grain boundary effects, making it ideal for semiconductor research, solder alloy development, and fundamental materials science studies. Industries use single-crystal tin discs in advanced soldering processes, superconducting component fabrication, and specialized electroplating systems. In research, they support investigations into crystallographic-dependent corrosion behavior, electron transport phenomena, and epitaxial thin-film growth. The flat, uniform surface is well-suited for analytical techniques such as X-ray diffraction, scanning probe microscopy, and microfabrication trials. The combination of geometric precision, structural perfection, and chemical stability ensures dependable results in both manufacturing and experimental settings.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Single Crystal

Orientation		See Item
Thickness		+2% / -1%
Length		+2% / -1%

Disk

Diameter		+2% / -1%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	50
Crystal structure	Tetragonal
Electronic structure	Kr 4d¹⁰ 5s² 5p²
Valences shown	2,4
Atomic weight( amu )	118.69
Thermal neutron absorption cross-section( Barns )	0.63
Photo-electric work function( eV )	4.3
Natural isotope distribution( Mass No./% )	122/ 4.6
Natural isotope distribution( Mass No./% )	124/ 5.6
Natural isotope distribution( Mass No./% )	114/ 0.7
Natural isotope distribution( Mass No./% )	120/ 32.4
Natural isotope distribution( Mass No./% )	118/ 24.3
Natural isotope distribution( Mass No./% )	112/ 1.0
Natural isotope distribution( Mass No./% )	116/ 14.7
Natural isotope distribution( Mass No./% )	115/ 0.4
Natural isotope distribution( Mass No./% )	117/ 7.7
Natural isotope distribution( Mass No./% )	119/ 8.6
Atomic radius - Goldschmidt( nm )	0.158
Ionisation potential( No./eV )	2/ 14.63
Ionisation potential( No./eV )	5/ 72.3
Ionisation potential( No./eV )	3/ 30.5
Ionisation potential( No./eV )	4/ 40.7
Ionisation potential( No./eV )	1/ 7.34

Mechanical Properties

Element	Value
Hardness - Mohs	1.5-1.8
Material condition	Polycrystalline
Poisson's ratio	0.357
Bulk modulus( GPa )	58.2
Tensile modulus( GPa )	49.9

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	12.6@20@20°C
Superconductivity critical temperature( K )	3.722
Temperature coefficient( K⁻¹ )	0.0046@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.42

Physical Properties

Element	Value
Boiling point( C )	2270
Density( gcm⁻³ )	7.28@20°C

Thermal Properties

Element	Value
Melting point( C )	231.9
Latent heat of evaporation( J g⁻¹ )	2497
Latent heat of fusion( J g⁻¹ )	59.6
Specific heat( J K⁻¹ kg⁻¹ )	213@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	66.8@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	23.5@0-100°C