Silicon Sputtering Target

Silicon Sputtering Target provides high-purity silicon in a form optimized for thin-film deposition via physical vapor deposition (PVD) techniques. Its uniform composition and controlled density ensure consistent film quality, adhesion, and thickness control. Industries such as microelectronics, photovoltaics, and optics use silicon sputtering targets for fabricating thin-film transistors, solar cells, and optical coatings. Specific applications include depositing amorphous silicon layers in display technology, creating passivation layers for semiconductor devices, and producing anti-reflective coatings for lenses. In research, these targets are essential for studying thin-film growth, tailoring surface properties, and developing advanced electronic and photonic devices. The combination of purity, geometry, and compatibility with PVD systems makes silicon sputtering targets a critical enabler in next-generation device manufacturing.

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Properties

Reference & Citations

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	14
Crystal structure	Diamond
Electronic structure	Ne 3s² 3p²
Valences shown	4
Atomic weight( amu )	28.0855
Thermal neutron absorption cross-section( Barns )	0.16
Photo-electric work function( eV )	4.2
Natural isotope distribution( Mass No./% )	30/ 3.10
Natural isotope distribution( Mass No./% )	29/ 4.67
Natural isotope distribution( Mass No./% )	28/ 92.23
Atomic radius - Goldschmidt( nm )	0.117
Ionisation potential( No./eV )	5/ 167
Ionisation potential( No./eV )	1/ 8.15
Ionisation potential( No./eV )	2/ 16.3
Ionisation potential( No./eV )	3/ 33.5
Ionisation potential( No./eV )	4/ 45.1
Ionisation potential( No./eV )	6/ 205

Mechanical Properties

Element	Value
Hardness - Mohs	7
Material condition	Polycrystalline
Poisson's ratio	0.42
Bulk modulus( GPa )	100
Tensile modulus( GPa )	113

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	23 x 10¹⁰@20@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	-41.56

Physical Properties

Element	Value
Boiling point( C )	2355
Density( gcm⁻³ )	2.34@20°C

Thermal Properties

Element	Value
Melting point( C )	1410
Latent heat of evaporation( J g⁻¹ )	13700
Latent heat of fusion( J g⁻¹ )	1650
Specific heat( J K⁻¹ kg⁻¹ )	703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	4.7-7.6@0-100°C