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Formula: Si
Form: Sputtering Target
Material: Silicon
CAS Number: 7440-21-3
Commodity: Metals
Purity:
99.999%
Our Silicon Sputtering Targets are made from high purity silicon. Available in 15 variations, they allow precise control over the silicon deposition process for a variety of scientific and industrial applications. They exhibit properties like low resistivity and high carrier mobilities, making them ideal for microelectronics, photovoltaics and semiconductor devices. To ensure outstanding performance, our range of Silicon Sputtering Targets are precisely machined for compatibility with all major sputtering systems.
Material Properties for Metals
Atomic Properties
| Element | Value |
|---|---|
| Atomic number | 14 |
| Crystal structure | Diamond |
| Electronic structure | Ne 3s² 3p² |
| Valences shown | 4 |
| Atomic weight( amu ) | 28.0855 |
| Thermal neutron absorption cross-section( Barns ) | 0.16 |
| Photo-electric work function( eV ) | 4.2 |
| Natural isotope distribution( Mass No./% ) | 30/ 3.10 |
| Natural isotope distribution( Mass No./% ) | 29/ 4.67 |
| Natural isotope distribution( Mass No./% ) | 28/ 92.23 |
| Atomic radius - Goldschmidt( nm ) | 0.117 |
| Ionisation potential( No./eV ) | 5/ 167 |
| Ionisation potential( No./eV ) | 1/ 8.15 |
| Ionisation potential( No./eV ) | 2/ 16.3 |
| Ionisation potential( No./eV ) | 3/ 33.5 |
| Ionisation potential( No./eV ) | 4/ 45.1 |
| Ionisation potential( No./eV ) | 6/ 205 |
Mechanical Properties
| Element | Value |
|---|---|
| Hardness - Mohs | 7 |
| Material condition | Polycrystalline |
| Poisson's ratio | 0.42 |
| Bulk modulus( GPa ) | 100 |
| Tensile modulus( GPa ) | 113 |
Electrical Properties
| Element | Value |
|---|---|
| Electrical resistivity( µOhmcm ) | 23 x 10¹⁰@20@20°C |
| Thermal emf against Pt (cold 0C - hot 100C)( mV ) | -41.56 |
Physical Properties
| Element | Value |
|---|---|
| Boiling point( C ) | 2355 |
| Density( gcm⁻³ ) | 2.34@20°C |
Thermal Properties
| Element | Value |
|---|---|
| Melting point( C ) | 1410 |
| Latent heat of evaporation( J g⁻¹ ) | 13700 |
| Latent heat of fusion( J g⁻¹ ) | 1650 |
| Specific heat( J K⁻¹ kg⁻¹ ) | 703@25°C |
| Thermal conductivity( W m⁻¹ K⁻¹ ) | 80-150@0-100°C |
| Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) | 4.7-7.6@0-100°C |