Silicon Foil

Silicon Foil combines semiconductor-grade purity, mechanical rigidity, and controlled thickness in a form suitable for electronics, photonics, and research. The thin geometry facilitates its use as a substrate for microfabrication, optical devices, and thin-film deposition. Industries such as semiconductor manufacturing, photovoltaics, and MEMS technology employ silicon foil in wafer prototyping, solar cell production, and sensor fabrication. Specific applications include acting as a base layer for integrated circuits, forming reflective layers in optical devices, and enabling microelectromechanical systems. In research, silicon foil is vital for studies on surface chemistry, doping processes, and thin-film interactions. Its compatibility with high-precision fabrication ensures its continued role in advanced technology sectors.

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Tolerance

Properties

Reference & Citations

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Tolerances

Foil/Film/Sheet

Thickness	<0.01mm	±25%
Thickness	0.01mm - 0.05mm	±15%
Thickness	>0.05mm	±10%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	14
Crystal structure	Diamond
Electronic structure	Ne 3s² 3p²
Valences shown	4
Atomic weight( amu )	28.0855
Thermal neutron absorption cross-section( Barns )	0.16
Photo-electric work function( eV )	4.2
Natural isotope distribution( Mass No./% )	30/ 3.10
Natural isotope distribution( Mass No./% )	29/ 4.67
Natural isotope distribution( Mass No./% )	28/ 92.23
Atomic radius - Goldschmidt( nm )	0.117
Ionisation potential( No./eV )	5/ 167
Ionisation potential( No./eV )	1/ 8.15
Ionisation potential( No./eV )	2/ 16.3
Ionisation potential( No./eV )	3/ 33.5
Ionisation potential( No./eV )	4/ 45.1
Ionisation potential( No./eV )	6/ 205

Mechanical Properties

Element	Value
Hardness - Mohs	7
Material condition	Polycrystalline
Poisson's ratio	0.42
Bulk modulus( GPa )	100
Tensile modulus( GPa )	113

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	23 x 10¹⁰@20@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	-41.56

Physical Properties

Element	Value
Boiling point( C )	2355
Density( gcm⁻³ )	2.34@20°C

Thermal Properties

Element	Value
Melting point( C )	1410
Latent heat of evaporation( J g⁻¹ )	13700
Latent heat of fusion( J g⁻¹ )	1650
Specific heat( J K⁻¹ kg⁻¹ )	703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	4.7-7.6@0-100°C