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Formula: Si
Form: Foil/Film/Sheet
Material: Silicon
CAS Number: 7440-21-3
Commodity: Metals
Purity: 99.999%
Structure: Polycrystalline
Goodfellow provides silicon foil with a maximum purity of 99.999% (5N), catering to specialized applications in electronics and materials science. Silicon, as a semiconductor, is fundamental to modern electronics and solar energy technologies. In foil form, it offers unique possibilities for flexible electronics and thin-film applications. This high-purity silicon is crucial in the development of advanced solar cells, thin-film transistors, and MEMS (Micro-Electro-Mechanical Systems) devices. In research, it serves as an excellent substrate for growing epitaxial layers and studying surface phenomena. Its use in next-generation flexible displays and wearable electronics showcases its potential in emerging technologies. The ongoing exploration of silicon-based quantum computing further emphasizes its enduring importance in cutting-edge scientific and technological advancements.
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Tolerances

Foil/Film/Sheet
Thickness <0.01mm ±25%
Thickness 0.01mm - 0.05mm ±15%
Thickness >0.05mm ±10%

Material Properties for Metals

Atomic Properties
Element Value
Atomic number 14
Crystal structure Diamond
Electronic structure Ne 3s² 3p²
Valences shown 4
Atomic weight( amu ) 28.0855
Thermal neutron absorption cross-section( Barns ) 0.16
Photo-electric work function( eV ) 4.2
Natural isotope distribution( Mass No./% ) 30/ 3.10
Natural isotope distribution( Mass No./% ) 29/ 4.67
Natural isotope distribution( Mass No./% ) 28/ 92.23
Atomic radius - Goldschmidt( nm ) 0.117
Ionisation potential( No./eV ) 5/ 167
Ionisation potential( No./eV ) 1/ 8.15
Ionisation potential( No./eV ) 2/ 16.3
Ionisation potential( No./eV ) 3/ 33.5
Ionisation potential( No./eV ) 4/ 45.1
Ionisation potential( No./eV ) 6/ 205
Mechanical Properties
Element Value
Hardness - Mohs 7
Material condition Polycrystalline
Poisson's ratio 0.42
Bulk modulus( GPa ) 100
Tensile modulus( GPa ) 113
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 23 x 10¹⁰@20@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) -41.56
Physical Properties
Element Value
Boiling point( C ) 2355
Density( gcm⁻³ ) 2.34@20°C
Thermal Properties
Element Value
Melting point( C ) 1410
Latent heat of evaporation( J g⁻¹ ) 13700
Latent heat of fusion( J g⁻¹ ) 1650
Specific heat( J K⁻¹ kg⁻¹ ) 703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 4.7-7.6@0-100°C

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