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Silicon Foil/Sheet
Available Configurations
Properties common to all products in this list
| Thickness | Size |
|---|---|
| 1 mm to 2 mm | 10 x 10 mm to 50 x 50 mm |
Need custom configurations? Please contact us.
Key Features
Silicon Foil combines semiconductor-grade purity, precisely controlled thickness, mechanical rigidity, and established semiconductor processing compatibility in a flat form suitable for electronics, photonics, MEMS, and photovoltaics:
Semiconductor-Grade Purity
Semiconductor-grade silicon purity provides the defined electrical properties required for controlled doping studies, surface chemistry investigations, and thin-film interaction research where the background impurity level of the substrate must not interfere with the experimental measurement or device function.
Mechanically Rigid Substrate for Thin-Film Deposition
Silicon’s high elastic modulus provides a mechanically rigid, dimensionally stable substrate for thin-film deposition, photolithographic patterning, and microfabrication processes, supporting uniform film thickness and pattern registration accuracy across the substrate surface.
Established Semiconductor Processing Compatibility
Silicon foil is compatible with the full suite of standard semiconductor processing steps including thermal oxidation, CVD, PVD, photolithography, wet and dry etching, and ion implantation, enabling its use as a prototyping substrate for integrated circuit, MEMS, and sensor device development using established process flows.
Good Reflectivity in the Visible and Near-Infrared Spectrum
Polished silicon foil provides good reflectivity in the visible and near-infrared spectrum from its high refractive index surface, supporting its use as a reflective layer in optical devices and as a mirror substrate in optical instrument assemblies where lightweight, semiconductor-compatible mirror substrates are required.
Defined Electrical Properties Through Controlled Doping
The electrical properties of silicon foil are precisely tunable from highly resistive to highly conductive through controlled doping during crystal growth or post-growth ion implantation, supporting its application across resistivity specifications from insulating substrates to semi-metal electrical contacts.
Industrial Applications
Silicon Foil is used across semiconductor manufacturing, MEMS fabrication, photovoltaics, and photonics wherever semiconductor-grade purity, controlled thickness, and standard semiconductor processing compatibility determine material selection:
- ✦ Wafer Prototyping and Substrate for Integrated Circuit Development
- Used as a wafer prototyping substrate for integrated circuit development, where the semiconductor-grade purity, compatibility with standard IC fabrication process flows, and defined electrical properties allow development and testing of device structures and process recipes before commitment to production-quality wafer stock.
- ✦ Solar Cell Production and Photovoltaic Device Research
- Applied in solar cell production and photovoltaic device research as a silicon absorber substrate, where the thin foil geometry allows exploration of material-efficient, thin-silicon solar cell architectures and process development for kerfless silicon wafer production methods.
- ✦ MEMS Sensor Fabrication and Microelectromechanical Device Development
- Used for MEMS sensor fabrication and microelectromechanical device development, where silicon’s mechanical properties, established microfabrication process compatibility, and semiconductor-grade purity support the precision etching, deposition, and doping operations required for MEMS pressure sensor, accelerometer, and resonator fabrication.
- ✦ Reflective Layers in Optical Devices and Instrument Assemblies
- Applied as reflective layers in optical devices and precision instrument mirror assemblies, where the polished silicon surface provides a defined reflective substrate compatible with thin-film optical coating deposition for customised spectral reflectance performance.
- ✦ Surface Chemistry, Doping and Thin-Film Interaction Research
- Used in research into silicon surface chemistry, controlled doping processes, and thin-film interaction mechanisms, providing a semiconductor-grade reference substrate with well-defined initial electrical and surface properties for systematic investigation of surface passivation, oxide growth, and thin-film adhesion behavior.
Material Properties
| Element | Value |
|---|---|
| Atomic number | 14 |
| Crystal structure | Diamond |
| Electronic structure | Ne 3s² 3p² |
| Valences shown | 4 |
| Atomic weight( amu ) | 28.0855 |
| Thermal neutron absorption cross-section( Barns ) | 0.16 |
| Photo-electric work function( eV ) | 4.2 |
| Natural isotope distribution( Mass No./% ) | 30/ 3.10 |
| Natural isotope distribution( Mass No./% ) | 29/ 4.67 |
| Natural isotope distribution( Mass No./% ) | 28/ 92.23 |
| Atomic radius - Goldschmidt( nm ) | 0.117 |
| Ionisation potential( No./eV ) | 5/ 167 |
| Ionisation potential( No./eV ) | 1/ 8.15 |
| Ionisation potential( No./eV ) | 2/ 16.3 |
| Ionisation potential( No./eV ) | 3/ 33.5 |
| Ionisation potential( No./eV ) | 4/ 45.1 |
| Ionisation potential( No./eV ) | 6/ 205 |
| Element | Value |
|---|---|
| Hardness - Mohs | 7 |
| Material condition | Polycrystalline |
| Poisson's ratio | 0.42 |
| Bulk modulus( GPa ) | 100 |
| Tensile modulus( GPa ) | 113 |
| Element | Value |
|---|---|
| Electrical resistivity( µOhmcm ) | 23 x 10¹⁰@20°C |
| Thermal emf against Pt (cold 0C - hot 100C)( mV ) | -41.56 |
| Element | Value |
|---|---|
| Boiling point( C ) | 2355 |
| Density( gcm⁻³ ) | 2.34@20°C |
| Element | Value |
|---|---|
| Melting point( C ) | 1410 |
| Latent heat of evaporation( J g⁻¹ ) | 13700 |
| Latent heat of fusion( J g⁻¹ ) | 1650 |
| Specific heat( J K⁻¹ kg⁻¹ ) | 703@25°C |
| Thermal conductivity( W m⁻¹ K⁻¹ ) | 80-150@0-100°C |
| Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) | 4.7-7.6@0-100°C |
Tolerances
| Thickness | <0.01mm | ±25% |
|---|---|---|
| Thickness | 0.01mm - 0.05mm | ±15% |
| Thickness | >0.05mm | ±10% |
| Linear dimension | <100mm | ±1mm |
| Linear dimension | >=100mm | +2 / -1% |