Silicon Rod

Silicon Rod combines high purity, structural integrity, and controlled crystallinity, making it a preferred form for zone refining, crystal growth, and semiconductor manufacturing. Its rod geometry supports processes such as the Czochralski and float-zone methods, enabling the production of defect-free single crystals for microelectronics and photovoltaic applications. Industries including semiconductors, optics, and energy storage use silicon rods for wafer production, optical component substrates, and research into advanced battery anodes. Specific applications include manufacturing monocrystalline wafers for integrated circuits, producing precision optical mirrors, and experimental synthesis of silicon-based composites. In research, silicon rods enable precise studies of crystal defects, doping behavior, and thermal conductivity in bulk silicon. Their role in enabling ultra-pure silicon production underscores their industrial and scientific importance.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Rod

Diameter	=<10mm	±10%
Diameter	>10mm	±5%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	14
Crystal structure	Diamond
Electronic structure	Ne 3s² 3p²
Valences shown	4
Atomic weight( amu )	28.0855
Thermal neutron absorption cross-section( Barns )	0.16
Photo-electric work function( eV )	4.2
Natural isotope distribution( Mass No./% )	30/ 3.10
Natural isotope distribution( Mass No./% )	29/ 4.67
Natural isotope distribution( Mass No./% )	28/ 92.23
Atomic radius - Goldschmidt( nm )	0.117
Ionisation potential( No./eV )	5/ 167
Ionisation potential( No./eV )	1/ 8.15
Ionisation potential( No./eV )	2/ 16.3
Ionisation potential( No./eV )	3/ 33.5
Ionisation potential( No./eV )	4/ 45.1
Ionisation potential( No./eV )	6/ 205

Mechanical Properties

Element	Value
Hardness - Mohs	7
Material condition	Polycrystalline
Poisson's ratio	0.42
Bulk modulus( GPa )	100
Tensile modulus( GPa )	113

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	23 x 10¹⁰@20@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	-41.56

Physical Properties

Element	Value
Boiling point( C )	2355
Density( gcm⁻³ )	2.34@20°C

Thermal Properties

Element	Value
Melting point( C )	1410
Latent heat of evaporation( J g⁻¹ )	13700
Latent heat of fusion( J g⁻¹ )	1650
Specific heat( J K⁻¹ kg⁻¹ )	703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	4.7-7.6@0-100°C