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Silicon Sputtering Target

Our Silicon Sputtering Targets are made from high purity silicon. Available in 15 variations, they allow precise control over the silicon deposition process for a variety of scientific and industrial applications. They exhibit properties like low resistivity and high carrier mobilities, making them ideal for microelectronics, photovoltaics and semiconductor devices. To ensure outstanding performance, our range of Silicon Sputtering Targets are precisely machined for compatibility with all major sputtering systems.
Formula: Si
Percentage Purity: 99.999%
Thickness: 4mm
Diameter: 20mm
CAS Number: 7440-21-3
UOM Code: 006-872-47
SKU: 1000000926
Product Code: SI00-ST-000200
Technical Data Sheet
Safety Data Sheet
$147.69
each
  • Buy 5 for $119.63 each and save 19%
  • Buy 10 for $109.29 each and save 26%
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Material Properties for Metals

Atomic Properties
Element Value
Atomic number 14
Crystal structure Diamond
Electronic structure Ne 3s² 3p²
Valences shown 4
Atomic weight( amu ) 28.0855
Thermal neutron absorption cross-section( Barns ) 0.16
Photo-electric work function( eV ) 4.2
Natural isotope distribution( Mass No./% ) 30/ 3.10
Natural isotope distribution( Mass No./% ) 29/ 4.67
Natural isotope distribution( Mass No./% ) 28/ 92.23
Atomic radius - Goldschmidt( nm ) 0.117
Ionisation potential( No./eV ) 5/ 167
Ionisation potential( No./eV ) 1/ 8.15
Ionisation potential( No./eV ) 2/ 16.3
Ionisation potential( No./eV ) 3/ 33.5
Ionisation potential( No./eV ) 4/ 45.1
Ionisation potential( No./eV ) 6/ 205
Mechanical Properties
Element Value
Hardness - Mohs 7
Material condition Polycrystalline
Poisson's ratio 0.42
Bulk modulus( GPa ) 100
Tensile modulus( GPa ) 113
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 23 x 10¹⁰@20@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) -41.56
Physical Properties
Element Value
Boiling point( C ) 2355
Density( gcm⁻³ ) 2.34@20°C
Thermal Properties
Element Value
Melting point( C ) 1410
Latent heat of evaporation( J g⁻¹ ) 13700
Latent heat of fusion( J g⁻¹ ) 1650
Specific heat( J K⁻¹ kg⁻¹ ) 703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 4.7-7.6@0-100°C
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