Lanthanum Sputtering Target

Lanthanum Sputtering Target is recognized for its high purity, controlled microstructure, and ability to deposit uniform thin films, making it essential in thin-film technology. Its processing often involves precision forging and electron beam melting to achieve defect-free targets with enhanced hardness and stability. Industries such as microelectronics, optoelectronics, and advanced coatings rely heavily on lanthanum sputtering targets for fabricating high-k dielectric layers, barrier coatings, and gate films in semiconductor devices. Specific applications include lanthanum-based oxide thin films for high-performance transistors, metal gate electrodes in next-generation integrated circuits, and advanced optical coatings requiring stability and uniformity. Research emphasizes advances in high-purity target preparation, lanthanum oxide sintered compacts, and stable deposition methods to minimize contamination and optimize film performance. In both industrial and research contexts, Lanthanum Sputtering Target is a critical enabler of next-generation electronics and advanced functional thin-film systems.

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Properties

Reference & Citations

Flammable

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	57
Crystal structure	Hexagonal close packed/Face centred cubic
Electronic structure	Xe 5d¹ 6s²
Valences shown	3
Atomic weight( amu )	138.9055
Thermal neutron absorption cross-section( Barns )	8.9
Photo-electric work function( eV )	3.5
Natural isotope distribution( Mass No./% )	139/ 99.91
Natural isotope distribution( Mass No./% )	138/ 0.09
Atomic radius - Goldschmidt( nm )	0.187
Ionisation potential( No./eV )	3/ 19.18
Ionisation potential( No./eV )	1/ 5.58
Ionisation potential( No./eV )	2/ 11.06

Mechanical Properties

Element	Value
Material condition	Polycrystalline
Poisson's ratio	0.28
Bulk modulus( GPa )	24.8
Tensile modulus( GPa )	37.9
Hardness - Vickers( kgf mm⁻² )	40
Tensile strength( MPa )	131
Yield strength( MPa )	124

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	57@20@20°C
Superconductivity critical temperature( K )	4.88
Temperature coefficient( K⁻¹ )	0.00218@0-100°C

Physical Properties

Element	Value
Boiling point( C )	3457
Density( gcm⁻³ )	6.174@20°C

Thermal Properties

Element	Value
Melting point( C )	921
Latent heat of evaporation( J g⁻¹ )	2897
Latent heat of fusion( J g⁻¹ )	60.2
Specific heat( J K⁻¹ kg⁻¹ )	197@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	13.4@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	4.9@0-100°C