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Lanthanum Sputtering Target

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Properties common to all products in this list

Composition: La Form: Sputtering Target Material: Lanthanum CAS Number: 7439-91-0 Commodity: Metals Purity: 99% (2N) Thickness: 1mm
Lanthanum Sputtering Target is recognized for its high purity, controlled microstructure, and ability to deposit uniform thin films, making it essential in thin-film technology. Its processing often involves precision forging and electron beam melting to achieve defect-free targets with enhanced hardness and stability. Industries such as microelectronics, optoelectronics, and advanced coatings rely heavily on lanthanum sputtering targets for fabricating high-k dielectric layers, barrier coatings, and gate films in semiconductor devices. Specific applications include lanthanum-based oxide thin films for high-performance transistors, metal gate electrodes in next-generation integrated circuits, and advanced optical coatings requiring stability and uniformity. Research emphasizes advances in high-purity target preparation, lanthanum oxide sintered compacts, and stable deposition methods to minimize contamination and optimize film performance. In both industrial and research contexts, Lanthanum Sputtering Target is a critical enabler of next-generation electronics and advanced functional thin-film systems.

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Material Properties

Atomic Properties
Element Value
Atomic number 57
Crystal structure Hexagonal close packed/Face centred cubic
Electronic structure Xe 5d¹ 6s²
Valences shown 3
Atomic weight( amu ) 138.9055
Thermal neutron absorption cross-section( Barns ) 8.9
Photo-electric work function( eV ) 3.5
Natural isotope distribution( Mass No./% ) 139/ 99.91
Natural isotope distribution( Mass No./% ) 138/ 0.09
Atomic radius - Goldschmidt( nm ) 0.187
Ionisation potential( No./eV ) 3/ 19.18
Ionisation potential( No./eV ) 1/ 5.58
Ionisation potential( No./eV ) 2/ 11.06
Mechanical Properties
Element Value
Material condition Polycrystalline
Poisson's ratio 0.28
Bulk modulus( GPa ) 24.8
Tensile modulus( GPa ) 37.9
Hardness - Vickers( kgf mm⁻² ) 40
Tensile strength( MPa ) 131
Yield strength( MPa ) 124
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 57@20°C
Superconductivity critical temperature( K ) 4.88
Temperature coefficient( K⁻¹ ) 0.00218@0-100°C
Physical Properties
Element Value
Boiling point( C ) 3457
Density( gcm⁻³ ) 6.174@20°C
Thermal Properties
Element Value
Melting point( C ) 921
Latent heat of evaporation( J g⁻¹ ) 2897
Latent heat of fusion( J g⁻¹ ) 60.2
Specific heat( J K⁻¹ kg⁻¹ ) 197@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 13.4@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 4.9@0-100°C
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Available Configurations

Properties common to all products in this list

Composition: La Form: Sputtering Target Material: Lanthanum CAS Number: 7439-91-0 Commodity: Metals Purity: 99% (2N) Thickness: 1mm

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Tolerances

Disk
Thickness <0.01mm ±25%
Thickness =<0.05mm ±15%
Thickness >0.05mm ±10%
Diameter ±0.5mm