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Hot-pressed Silicon Nitride Sputtering Target

Formula: Si₃N₄
Form: Sputtering Target
Material: Hot-pressed Silicon Nitride
Commodity: Ceramics
Production Method: Hot Pressed
Hot-pressed Silicon Nitride Sputtering Targets are a high-purity, high-density ceramic material offered within our extensive range of sputtering targets. With 6 size variations available, they can be customized for use as sputtering targets in thin film deposition systems. Their silicon nitride composition provides properties like high hardness, wear resistance and chemical inertness, making them useful for thin films applications such as protective coatings, semiconductor devices and optical coatings.
Technical Data Sheet Safety Data Sheet Tolerance Properties
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Material Properties for Ceramics

Chemical Resistance
Element Value
Acids - concentrated Fair
Acids - dilute Good
Alkalis Good-Poor
Halogens Good
Metals Fair
Electrical Properties
Element Value
Dielectric constant 10
Volume resistivity( Ohmcm ) 10¹²-10¹⁵@25
Physical Properties
Element Value
Apparent porosity( % ) 0
Density( gcm⁻³ ) 3.11
Thermal Properties
Element Value
Sublimation point( C ) 1900
Upper continuous use temperature( C ) 1100-1650
Specific heat( J K⁻¹ kg⁻¹ ) 680-800@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 15-43@20°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 3.3@20-1000°C
Mechanical Properties
Element Value
Tensile modulus( GPa ) 280-310
Hardness - Vickers( kgf mm⁻² ) 1700-2200
Shear strength( MPa ) 480-960
Tensile strength( MPa ) 400-580
Pultrusions
Element Value
Compressive strength( MPa ) 2000-3500

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