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Boron Sputtering Target

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Composition: B Form: Sputtering Target Material: Boron CAS Number: 7440-42-8 Commodity: Metals Purity: 99.6% Production Method: Hot Pressed
Boron Sputtering Target enables the deposition of thin films with outstanding hardness, chemical stability, and thermal resistance, leveraging boron’s strong covalent bonding and low atomic mass. These targets allow for precise control over film stoichiometry, enabling coatings with desirable mechanical, optical, and electronic properties. Industries such as semiconductor fabrication, tribology, and energy systems utilize boron sputtering to produce high-performance protective coatings, dielectric layers, and thermoelectric interfaces. Specific applications include hard coatings for cutting tools, barrier layers in microelectronics, and functional films for energy conversion devices. Research has advanced deposition techniques such as pulsed magnetron sputtering to improve coating uniformity, adhesion, and phase control, opening pathways for new applications in nanostructured materials and multifunctional surfaces. The boron sputtering target’s ability to deliver tailored, high-performance films underpins its importance in driving forward both industrial coating technologies and materials research.
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Material Properties

Atomic Properties
Element Value
Atomic number 5
Crystal structure Tetragonal
Electronic structure He 2s² 2p¹
Valences shown 3
Atomic weight( amu ) 10.81
Thermal neutron absorption cross-section( Barns ) 672
Photo-electric work function( eV ) 4.5
Natural isotope distribution( Mass No./% ) 11/ 80.2
Natural isotope distribution( Mass No./% ) 10/ 19.8
Atomic radius - Goldschmidt( nm ) 0.097
Ionisation potential( No./eV ) 4/ 259
Ionisation potential( No./eV ) 2/ 25.2
Ionisation potential( No./eV ) 1/ 8.30
Ionisation potential( No./eV ) 5/ 340
Ionisation potential( No./eV ) 337.9
Mechanical Properties
Element Value
Hardness - Mohs 9.5
Material condition Arc melted
Tensile modulus( GPa ) 441
Tensile strength( MPa ) 1580-2410
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 1.8x10¹²@27°C
Physical Properties
Element Value
Boiling point( C ) 3700
Density( gcm⁻³ ) 2.34-2.37@20°C
Thermal Properties
Element Value
Melting point( C ) 2180
Latent heat of evaporation( J g⁻¹ ) 35000
Latent heat of fusion( J g⁻¹ ) 2090
Specific heat( J K⁻¹ kg⁻¹ ) 1030@25°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 8.3@0-100°C
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Available Configurations

Properties common to all products in this list

Composition: B Form: Sputtering Target Material: Boron CAS Number: 7440-42-8 Commodity: Metals Purity: 99.6% Production Method: Hot Pressed

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