Images are for guidance only and might not represent the final product.

Tellurium Sputtering Target

Available Configurations

Properties common to all products in this list

Composition: Te Form: Sputtering Target Material: Tellurium CAS Number: 13494-80-9 Commodity: Metals Thickness: 3mm Diameter: 50mm
Tellurium Sputtering Target offers high purity, semiconducting behavior, and excellent compatibility with a range of thin-film deposition systems in a precisely manufactured disk form optimized for physical vapor deposition. Its electrical properties and ability to alloy with metals and chalcogenides make it essential for producing optical coatings, thermoelectric layers, and phase-change memory materials. Industries apply tellurium sputtering targets in infrared optics, solar cell fabrication, and advanced data storage devices. In research, they are used for fabricating thin-film semiconductors, studying thermoelectric material performance, and developing new optoelectronic devices. The target’s uniform density and purity ensure consistent sputtering rates and high-quality film deposition, making it indispensable in both industrial-scale manufacturing and experimental material science.

Acute toxicity

Serious health hazard

Starting at $1,299.99 each
No Minimum order Free technical support *Free delivery worldwide

Material Properties

Atomic Properties
Element Value
Atomic number 52
Crystal structure Hexagonal
Electronic structure Kr 4d¹⁰ 5s² 5p⁴
Valences shown 2,4,6
Atomic weight( amu ) 127.6
Thermal neutron absorption cross-section( Barns ) 4.7
Photo-electric work function( eV ) 4.8
Natural isotope distribution( Mass No./% ) 124/ 4.6
Natural isotope distribution( Mass No./% ) 125/ 7.0
Natural isotope distribution( Mass No./% ) 123/ 0.9
Natural isotope distribution( Mass No./% ) 126/ 18.7
Natural isotope distribution( Mass No./% ) 120/ 0.1
Natural isotope distribution( Mass No./% ) 128/ 31.7
Natural isotope distribution( Mass No./% ) 122/ 2.5
Natural isotope distribution( Mass No./% ) 130/ 34.5
Atomic radius - Goldschmidt( nm ) 0.143
Ionisation potential( No./eV ) 3/ 28.0
Ionisation potential( No./eV ) 4/ 37.4
Ionisation potential( No./eV ) 1/ 9.01
Ionisation potential( No./eV ) 6/ 70.7
Ionisation potential( No./eV ) 5/ 58.8
Ionisation potential( No./eV ) 2/ 18.6
Mechanical Properties
Element Value
Hardness - Mohs 2.3
Material condition Polycrystalline
Poisson's ratio 0.16-0.3
Bulk modulus( GPa ) 31.4
Tensile modulus( GPa ) 47.1
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 1.6x10⁵@0°C
Physical Properties
Element Value
Boiling point( C ) 990
Density( gcm⁻³ ) 6.25@20°C
Thermal Properties
Element Value
Melting point( C ) 450
Latent heat of evaporation( J g⁻¹ ) 820
Latent heat of fusion( J g⁻¹ ) 138
Specific heat( J K⁻¹ kg⁻¹ ) 201@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 3.3@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 16.75@0-100°C
each

Choose Your Options

Close

Available Configurations

Properties common to all products in this list

Composition: Te Form: Sputtering Target Material: Tellurium CAS Number: 13494-80-9 Commodity: Metals Thickness: 3mm Diameter: 50mm

We are collecting your products, please wait!...

Shipping restrictions and charges may apply for some hazardous materials.