Tellurium Sputtering Target

Tellurium Sputtering Target offers high purity, semiconducting behavior, and excellent compatibility with a range of thin-film deposition systems in a precisely manufactured disk form optimized for physical vapor deposition. Its electrical properties and ability to alloy with metals and chalcogenides make it essential for producing optical coatings, thermoelectric layers, and phase-change memory materials. Industries apply tellurium sputtering targets in infrared optics, solar cell fabrication, and advanced data storage devices. In research, they are used for fabricating thin-film semiconductors, studying thermoelectric material performance, and developing new optoelectronic devices. The target’s uniform density and purity ensure consistent sputtering rates and high-quality film deposition, making it indispensable in both industrial-scale manufacturing and experimental material science.

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Properties

Reference & Citations

Acute toxicity

Serious health hazard

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	52
Crystal structure	Hexagonal
Electronic structure	Kr 4d¹⁰ 5s² 5p⁴
Valences shown	2,4,6
Atomic weight( amu )	127.6
Thermal neutron absorption cross-section( Barns )	4.7
Photo-electric work function( eV )	4.8
Natural isotope distribution( Mass No./% )	124/ 4.6
Natural isotope distribution( Mass No./% )	125/ 7.0
Natural isotope distribution( Mass No./% )	123/ 0.9
Natural isotope distribution( Mass No./% )	126/ 18.7
Natural isotope distribution( Mass No./% )	120/ 0.1
Natural isotope distribution( Mass No./% )	128/ 31.7
Natural isotope distribution( Mass No./% )	122/ 2.5
Natural isotope distribution( Mass No./% )	130/ 34.5
Atomic radius - Goldschmidt( nm )	0.143
Ionisation potential( No./eV )	3/ 28.0
Ionisation potential( No./eV )	4/ 37.4
Ionisation potential( No./eV )	1/ 9.01
Ionisation potential( No./eV )	6/ 70.7
Ionisation potential( No./eV )	5/ 58.8
Ionisation potential( No./eV )	2/ 18.6

Mechanical Properties

Element	Value
Hardness - Mohs	2.3
Material condition	Polycrystalline
Poisson's ratio	0.16-0.3
Bulk modulus( GPa )	31.4
Tensile modulus( GPa )	47.1

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	1.6x10⁵@0@0°C

Physical Properties

Element	Value
Boiling point( C )	990
Density( gcm⁻³ )	6.25@20°C

Thermal Properties

Element	Value
Melting point( C )	450
Latent heat of evaporation( J g⁻¹ )	820
Latent heat of fusion( J g⁻¹ )	138
Specific heat( J K⁻¹ kg⁻¹ )	201@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	3.3@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	16.75@0-100°C