Silicon Single Crystal

Silicon Single Crystal offers exceptional purity, uniform atomic arrangement, and consistent electronic properties, making it the cornerstone material for semiconductor devices. Produced through methods such as the Czochralski or float-zone process, it provides defect-free crystal structures essential for high-performance electronics. Industries such as microelectronics, photovoltaics, and photonics rely on single-crystal silicon for integrated circuits, solar cells, and optical components. Specific applications include microchip wafer production, fabrication of high-efficiency photovoltaic cells, and substrates for MEMS sensors. In research, single-crystal silicon is crucial for studying carrier mobility, crystal defect physics, and nanoscale device fabrication. Its precise lattice structure ensures predictable performance, solidifying its role as a foundation for modern electronics and optoelectronic systems.

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Tolerance

Properties

Reference & Citations

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Tolerances

Single Crystal

Orientation		See Item
Thickness		+2% / -1%
Length		+2% / -1%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	14
Crystal structure	Diamond
Electronic structure	Ne 3s² 3p²
Valences shown	4
Atomic weight( amu )	28.0855
Thermal neutron absorption cross-section( Barns )	0.16
Photo-electric work function( eV )	4.2
Natural isotope distribution( Mass No./% )	30/ 3.10
Natural isotope distribution( Mass No./% )	29/ 4.67
Natural isotope distribution( Mass No./% )	28/ 92.23
Atomic radius - Goldschmidt( nm )	0.117
Ionisation potential( No./eV )	5/ 167
Ionisation potential( No./eV )	1/ 8.15
Ionisation potential( No./eV )	2/ 16.3
Ionisation potential( No./eV )	3/ 33.5
Ionisation potential( No./eV )	4/ 45.1
Ionisation potential( No./eV )	6/ 205

Mechanical Properties

Element	Value
Hardness - Mohs	7
Material condition	Polycrystalline
Poisson's ratio	0.42
Bulk modulus( GPa )	100
Tensile modulus( GPa )	113

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	23 x 10¹⁰@20@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	-41.56

Physical Properties

Element	Value
Boiling point( C )	2355
Density( gcm⁻³ )	2.34@20°C

Thermal Properties

Element	Value
Melting point( C )	1410
Latent heat of evaporation( J g⁻¹ )	13700
Latent heat of fusion( J g⁻¹ )	1650
Specific heat( J K⁻¹ kg⁻¹ )	703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	4.7-7.6@0-100°C