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Silicon Single Crystal

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Composition: Si Form: Single Crystal Material: Silicon CAS Number: 7440-21-3 Commodity: Metals Purity: 99.999%
Silicon Single Crystal offers exceptional purity, uniform atomic arrangement, and consistent electronic properties, making it the cornerstone material for semiconductor devices. Produced through methods such as the Czochralski or float-zone process, it provides defect-free crystal structures essential for high-performance electronics. Industries such as microelectronics, photovoltaics, and photonics rely on single-crystal silicon for integrated circuits, solar cells, and optical components. Specific applications include microchip wafer production, fabrication of high-efficiency photovoltaic cells, and substrates for MEMS sensors. In research, single-crystal silicon is crucial for studying carrier mobility, crystal defect physics, and nanoscale device fabrication. Its precise lattice structure ensures predictable performance, solidifying its role as a foundation for modern electronics and optoelectronic systems.
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Material Properties

Atomic Properties
Element Value
Atomic number 14
Crystal structure Diamond
Electronic structure Ne 3s² 3p²
Valences shown 4
Atomic weight( amu ) 28.0855
Thermal neutron absorption cross-section( Barns ) 0.16
Photo-electric work function( eV ) 4.2
Natural isotope distribution( Mass No./% ) 30/ 3.10
Natural isotope distribution( Mass No./% ) 29/ 4.67
Natural isotope distribution( Mass No./% ) 28/ 92.23
Atomic radius - Goldschmidt( nm ) 0.117
Ionisation potential( No./eV ) 5/ 167
Ionisation potential( No./eV ) 1/ 8.15
Ionisation potential( No./eV ) 2/ 16.3
Ionisation potential( No./eV ) 3/ 33.5
Ionisation potential( No./eV ) 4/ 45.1
Ionisation potential( No./eV ) 6/ 205
Mechanical Properties
Element Value
Hardness - Mohs 7
Material condition Polycrystalline
Poisson's ratio 0.42
Bulk modulus( GPa ) 100
Tensile modulus( GPa ) 113
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 23 x 10¹⁰@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) -41.56
Physical Properties
Element Value
Boiling point( C ) 2355
Density( gcm⁻³ ) 2.34@20°C
Thermal Properties
Element Value
Melting point( C ) 1410
Latent heat of evaporation( J g⁻¹ ) 13700
Latent heat of fusion( J g⁻¹ ) 1650
Specific heat( J K⁻¹ kg⁻¹ ) 703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 4.7-7.6@0-100°C
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Available Configurations

Properties common to all products in this list

Composition: Si Form: Single Crystal Material: Silicon CAS Number: 7440-21-3 Commodity: Metals Purity: 99.999%

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Tolerances

Single Crystal
Orientation See Item
Thickness +2% / -1%
Length +2% / -1%