Selenium Sputtering Target

Formula: Se

Form: Sputtering Target

Material: Selenium

CAS Number: 7782-49-2

Commodity: Metals

Thickness: 3mm

Diameter: 50mm

Hazard Pictogram: GHS06, GHS08, GHS09

Our Selenium Sputtering Targets are valued in the semiconductor industry to deposit thin films of selenium onto substrates via physical vapor deposition. Selenium itself is a nonmetallic element that’s photoconductive with a high melting point. These properties mean that it’s used as a film in applications such as photovoltaics, photocopiers, light meters and solar cells. Providing a controlled, uniformed and reliable coating, Selenium Sputtering Targets meet the needs of both research and manufacturing.

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Technical Data Sheet Safety Data Sheet Tolerance Properties

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	34
Crystal structure	Hexagonal
Electronic structure	Ar 3d¹⁰ 4s² 4p⁴
Valences shown	-2,4,6
Atomic weight( amu )	78.96
Thermal neutron absorption cross-section( Barns )	12.2
Photo-electric work function( eV )	5.9
Natural isotope distribution( Mass No./% )	76/ 9.0
Natural isotope distribution( Mass No./% )	82/ 9.2
Natural isotope distribution( Mass No./% )	74/ 0.9
Natural isotope distribution( Mass No./% )	80/ 49.8
Natural isotope distribution( Mass No./% )	77/ 7.6
Natural isotope distribution( Mass No./% )	78/ 23.5
Atomic radius - Goldschmidt( nm )	0.116
Ionisation potential( No./eV )	4/ 42.9
Ionisation potential( No./eV )	6/ 81.7
Ionisation potential( No./eV )	5/ 68.3
Ionisation potential( No./eV )	1/ 9.75
Ionisation potential( No./eV )	3/ 30.8
Ionisation potential( No./eV )	2/ 21.2

Mechanical Properties

Element	Value
Hardness - Mohs	2
Material condition	Polycrystalline
Poisson's ratio	0.447
Bulk modulus( GPa )	8.3
Tensile modulus( GPa )	58

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	12@20@20°C

Physical Properties

Element	Value
Boiling point( C )	685
Density( gcm⁻³ )	4.79@20°C

Thermal Properties

Element	Value
Melting point( C )	217
Latent heat of evaporation( J g⁻¹ )	333
Latent heat of fusion( J g⁻¹ )	69
Specific heat( J K⁻¹ kg⁻¹ )	321@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	0.5@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	37@0-100°C