Selenium Sputtering Target

Selenium Sputtering Target offers high photoconductivity, thermoelectric potential, and optical responsiveness in a dense, uniform form designed for thin-film deposition. Its properties make it valuable in photovoltaic devices, imaging sensors, and optical coatings. Industries use selenium sputtering targets for creating amorphous selenium photoconductive layers, infrared optical films, and thin-film thermoelectric modules. Research applications include the development of flexible photovoltaic coatings, photodetector materials, and optical data storage layers. The sputtering target form allows precise control of film thickness, morphology, and stoichiometry, enabling reproducible results in both commercial manufacturing and experimental studies. Its role in optoelectronics and energy harvesting highlights its importance in advancing modern electronics.

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Properties

Reference & Citations

Acute toxicity

Serious health hazard

Hazardous to the environment

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	34
Crystal structure	Hexagonal
Electronic structure	Ar 3d¹⁰ 4s² 4p⁴
Valences shown	-2,4,6
Atomic weight( amu )	78.96
Thermal neutron absorption cross-section( Barns )	12.2
Photo-electric work function( eV )	5.9
Natural isotope distribution( Mass No./% )	76/ 9.0
Natural isotope distribution( Mass No./% )	82/ 9.2
Natural isotope distribution( Mass No./% )	74/ 0.9
Natural isotope distribution( Mass No./% )	80/ 49.8
Natural isotope distribution( Mass No./% )	77/ 7.6
Natural isotope distribution( Mass No./% )	78/ 23.5
Atomic radius - Goldschmidt( nm )	0.116
Ionisation potential( No./eV )	4/ 42.9
Ionisation potential( No./eV )	6/ 81.7
Ionisation potential( No./eV )	5/ 68.3
Ionisation potential( No./eV )	1/ 9.75
Ionisation potential( No./eV )	3/ 30.8
Ionisation potential( No./eV )	2/ 21.2

Mechanical Properties

Element	Value
Hardness - Mohs	2
Material condition	Polycrystalline
Poisson's ratio	0.447
Bulk modulus( GPa )	8.3
Tensile modulus( GPa )	58

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	12@20@20°C

Physical Properties

Element	Value
Boiling point( C )	685
Density( gcm⁻³ )	4.79@20°C

Thermal Properties

Element	Value
Melting point( C )	217
Latent heat of evaporation( J g⁻¹ )	333
Latent heat of fusion( J g⁻¹ )	69
Specific heat( J K⁻¹ kg⁻¹ )	321@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	0.5@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	37@0-100°C