Manganese Sputtering Target

Manganese Sputtering Target, fabricated from high-purity manganese, is prized for its ability to produce uniform, high-quality thin films with excellent adhesion and stability. The purity of manganese is critical, as it minimizes defects, suppresses particle formation, and ensures reproducible thin-film deposition. Industries such as microelectronics, data storage, and energy technology employ manganese sputtering targets for their versatility in producing films with tailored electrical, magnetic, and structural properties. Specific applications include thin-film layers in semiconductor devices, barrier coatings in photovoltaic systems, and specialized films in spintronic and magnetic storage technologies. Research highlights advances in sputtering techniques that leverage high-purity manganese to achieve uniform deposition, fine grain structures, and enhanced film reliability. Manganese Sputtering Target therefore holds high significance in both research and industry, enabling next-generation device performance and contributing to innovation across multiple high-tech fields.

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Properties

Reference & Citations

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	25
Crystal structure	Body centred cubic
Electronic structure	Ar 3d⁵ 4s²
Valences shown	1, 2, 3, 4, 6, 7
Atomic weight( amu )	54.938
Thermal neutron absorption cross-section( Barns )	13.3
Photo-electric work function( eV )	3.8
Atomic radius - Goldschmidt( nm )	0.112
Ionisation potential( No./eV )	2/ 15.64
Ionisation potential( No./eV )	3/ 33.67
Ionisation potential( No./eV )	4/ 51.2
Ionisation potential( No./eV )	Jun-95
Ionisation potential( No./eV )	5/ 72.4
Ionisation potential( No./eV )	1/ 7.43

Mechanical Properties

Element	Value
Hardness - Mohs	5
Material condition	Polycrystalline
Poisson's ratio	0.24
Bulk modulus( GPa )	118
Tensile modulus( GPa )	191

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	160@20@20°C

Physical Properties

Element	Value
Boiling point( C )	1962
Density( gcm⁻³ )	7.4@20°C

Thermal Properties

Element	Value
Melting point( C )	1244
Latent heat of evaporation( J g⁻¹ )	4207
Latent heat of fusion( J g⁻¹ )	267
Specific heat( J K⁻¹ kg⁻¹ )	477@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	7.81@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	23@0-100°C