Hafnium Sputtering Target

Hafnium Sputtering Target is a high-purity metallic form of hafnium, engineered for thin-film deposition in microelectronics, optics, and advanced coatings. Known for its excellent corrosion resistance, high melting point, and compatibility with high-vacuum systems, it is widely used in industries requiring precise and reliable thin films. Applications span semiconductors, superconductors, and optical devices. Specific technologies benefiting from hafnium sputtering targets include the fabrication of high-purity hafnium thin films with controlled orientation for use in superconducting microwave kinetic inductance detectors (MKIDs), advanced semiconductor devices where impurity-free hafnium improves dielectric and barrier layer performance, and sputtering processes enhanced by hafnium as a dopant material to amplify yield and deposition efficiency. In research, hafnium sputtering targets are critical for investigating new hafnium-based thin-film systems, enabling breakthroughs in photonics, superconductivity, and high-k dielectric integration. By offering stability, purity, and adaptability, Hafnium Sputtering Target remains central to both scientific innovation and industrial manufacturing of next-generation devices.

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Properties

Reference & Citations

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	72
Crystal structure	Hexagonal close packed
Electronic structure	Xe 4f¹⁴ 5d² 6s²
Valences shown	4
Atomic weight( amu )	178.49
Thermal neutron absorption cross-section( Barns )	103
Photo-electric work function( eV )	3.9
Natural isotope distribution( Mass No./% )	179/ 13.8
Natural isotope distribution( Mass No./% )	176/ 5.2
Natural isotope distribution( Mass No./% )	180/ 35.2
Natural isotope distribution( Mass No./% )	174/ 0.2
Natural isotope distribution( Mass No./% )	177/ 18.5
Natural isotope distribution( Mass No./% )	178/ 27.1
Atomic radius - Goldschmidt( nm )	0.159
Ionisation potential( No./eV )	3/ 23.3
Ionisation potential( No./eV )	1/ 7.0
Ionisation potential( No./eV )	2/ 14.9
Ionisation potential( No./eV )	4/ 33.3

Mechanical Properties

Element	Value
Material condition	Hard
Material condition	Soft
Poisson's ratio	0.26
Poisson's ratio	0.26
Bulk modulus( GPa )	109
Bulk modulus( GPa )	109
Tensile modulus( GPa )	141
Tensile modulus( GPa )	141
Hardness - Vickers( kgf mm⁻² )	150-180
Tensile strength( MPa )	445
Tensile strength( MPa )	745
Yield strength( MPa )	365
Yield strength( MPa )	240

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	32.2@20@20°C
Superconductivity critical temperature( K )	0.128
Temperature coefficient( K⁻¹ )	0.0044@0-100°C

Physical Properties

Element	Value
Boiling point( C )	4602
Density( gcm⁻³ )	13.1@20°C

Thermal Properties

Element	Value
Melting point( C )	2227
Latent heat of evaporation( J g⁻¹ )	3700
Latent heat of fusion( J g⁻¹ )	122
Specific heat( J K⁻¹ kg⁻¹ )	146@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	23@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	6@0-100°C