Copper Sputtering Target

Copper Sputtering Target is engineered for high-purity deposition processes, offering low defect density, controlled grain size, and exceptional surface finish to ensure uniform thin-film growth. With purity levels up to 99.999% (5N) and optimized hardness, these targets deliver stable sputtering performance and high film adhesion. They are essential in semiconductor fabrication, data storage, and optoelectronics, where precise copper layers are critical for device performance. Specific applications include copper interconnect formation in integrated circuits, seed layer deposition for electroplating, and reflective or conductive coatings in advanced optics. In research, copper sputtering targets enable exploration of novel device architectures, high-frequency interconnect materials, and thin-film reliability under extreme conditions. Their role in enabling defect-free, high-uniformity films cements their importance as a cornerstone material in both industrial-scale manufacturing and cutting-edge scientific research.

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Properties

Reference & Citations

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	29
Crystal structure	Face centred cubic
Electronic structure	Ar 3d¹⁰ 4s¹
Valences shown	1, 2
Atomic weight( amu )	63.546
Thermal neutron absorption cross-section( Barns )	3.8
Photo-electric work function( eV )	4.5
Natural isotope distribution( Mass No./% )	65/ 30.8
Natural isotope distribution( Mass No./% )	63/ 69.2
Atomic radius - Goldschmidt( nm )	0.128
Ionisation potential( No./eV )	4/ 55.2
Ionisation potential( No./eV )	6/ 103
Ionisation potential( No./eV )	1/ 7.73
Ionisation potential( No./eV )	5/ 79.9
Ionisation potential( No./eV )	3/ 36.8
Ionisation potential( No./eV )	2/ 20.29

Mechanical Properties

Element	Value
Material condition	Soft
Material condition	Hard
Poisson's ratio	0.343
Poisson's ratio	0.343
Bulk modulus( GPa )	137.8
Bulk modulus( GPa )	137.8
Tensile modulus( GPa )	129.8
Tensile modulus( GPa )	129.8
Izod toughness( J m⁻¹ )	68
Izod toughness( J m⁻¹ )	58
Hardness - Vickers( kgf mm⁻² )	87
Hardness - Vickers( kgf mm⁻² )	49
Tensile strength( MPa )	314
Tensile strength( MPa )	224
Yield strength( MPa )	270
Yield strength( MPa )	54

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	1.69@20°C
Temperature coefficient( K⁻¹ )	0.0043@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.76

Physical Properties

Element	Value
Boiling point( C )	2567
Density( gcm⁻³ )	8.96@20°C

Thermal Properties

Element	Value
Melting point( C )	1083
Latent heat of evaporation( J g⁻¹ )	4796
Latent heat of fusion( J g⁻¹ )	205
Specific heat( J K⁻¹ kg⁻¹ )	385@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	401@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	17@0-100°C