Cadmium Sputtering Target

Cadmium Sputtering Target is engineered for the deposition of high-purity cadmium-based thin films, offering excellent thermal stability, uniform sputtering behavior, and high density for efficient material transfer. Its precise composition and homogeneity are critical for producing defect-free layers in advanced optoelectronic and photovoltaic devices. Industries such as solar energy, semiconductor manufacturing, and display technology employ cadmium sputtering targets to fabricate cadmium telluride (CdTe) and cadmium sulfide (CdS) films for thin-film solar cells, photodetectors, and transparent conductive coatings. Specific technological applications include controlled growth of CdTe films on flexible substrates, enabling lightweight and conformable photovoltaic modules, and the deposition of cadmium stannate layers to enhance electron transport in solar cells. Research continues to optimize sputtering parameters for improved crystallinity, optical absorption, and electronic performance of cadmium-based thin films, reinforcing the target’s role as a foundational material in high-performance thin-film fabrication and next-generation renewable energy systems.

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Properties

Reference & Citations

Acute toxicity

Serious health hazard

Hazardous to the environment

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	48
Crystal structure	Hexagonal close packed
Electronic structure	Kr 4d¹⁰ 5s²
Valences shown	2
Atomic weight( amu )	112.41
Thermal neutron absorption cross-section( Barns )	2450
Photo-electric work function( eV )	4
Natural isotope distribution( Mass No./% )	106/ 1.2
Natural isotope distribution( Mass No./% )	108/ 0.9
Natural isotope distribution( Mass No./% )	11112.8
Natural isotope distribution( Mass No./% )	112/ 24.0
Natural isotope distribution( Mass No./% )	113/ 12.3
Natural isotope distribution( Mass No./% )	116/ 7.6
Natural isotope distribution( Mass No./% )	110/ 12.4
Natural isotope distribution( Mass No./% )	114/ 28.8
Atomic radius - Goldschmidt( nm )	0.152
Ionisation potential( No./eV )	2/ 16.9
Ionisation potential( No./eV )	3/ 37.5
Ionisation potential( No./eV )	1/ 8.99

Mechanical Properties

Element	Value
Hardness - Mohs	-
Hardness - Mohs	2
Material condition	Polycrystalline
Material condition	Cast
Poisson's ratio	0.3
Poisson's ratio	0.3
Bulk modulus( GPa )	51
Bulk modulus( GPa )	51
Tensile modulus( GPa )	62.6
Tensile modulus( GPa )	62.6
Tensile strength( MPa )	-
Tensile strength( MPa )	71

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	7.3@20@20°C
Superconductivity critical temperature( K )	0.517
Temperature coefficient( K⁻¹ )	0.0043@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.91

Physical Properties

Element	Value
Boiling point( C )	765
Density( gcm⁻³ )	8.64@20°C

Thermal Properties

Element	Value
Melting point( C )	321
Latent heat of evaporation( J g⁻¹ )	886
Latent heat of fusion( J g⁻¹ )	57
Specific heat( J K⁻¹ kg⁻¹ )	232@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	96.9@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	31@0-100°C