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Boron Nitride Sputtering Target

Formula: BN
Form: Sputtering Target
Material: Boron Nitride
CAS Number: 10043-11-5
Commodity: Ceramics
Thickness: 3mm
Production Method: Hot Isostatic Pressed
Boron Nitride Sputtering Targets are used for thin film deposition techniques like magnetron sputtering. These high purity disks are available in 3 size variations. The hexagonal crystal structure of boron nitride gives them excellent thermal conductivity, electrical insulation and lubricity. Common applications include semiconductor device fabrication, hard protective coatings and thermally conductive fillers.
Technical Data Sheet Safety Data Sheet Tolerance Properties
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Material Properties for Ceramics

Chemical Resistance
Element Value
Acids - concentrated Fair
Acids - dilute Fair
Alkalis Fair
Halogens Poor
Metals Good
Electrical Properties
Element Value
Dielectric constant 4.3
Dielectric strength( kV mm⁻¹ ) 40-200
Volume resistivity( Ohmcm ) 10¹¹-10¹⁴@25
Physical Properties
Element Value
Apparent porosity( % ) Feb-15
Density( gcm⁻³ ) 1.9-2.2
Thermal Properties
Element Value
Sublimation point( C ) 2600-2800
Upper continuous use temperature( C ) 950-2500
Specific heat( J K⁻¹ kg⁻¹ ) 800-2000@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 15-50@20°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 1-36@20-1000°C
Mechanical Properties
Element Value
Tensile modulus( GPa ) 20-35
Shear strength( MPa ) Dec-25
Pultrusions
Element Value
Compressive strength( MPa ) 30-120

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