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Formula: Si
Form: Single Crystal
Material: Silicon
CAS Number: 7440-21-3
Commodity: Metals
Purity: 99.999%

Silicon Single Crystal

Silicon single crystal is a pure, flawless form of silicon with an ordered crystalline structure. Its high purity and perfect atomic alignment lead to outstanding semiconductor properties like electron mobility and low electrical resistance. Silicon single crystals are indispensable in microelectronics applications like integrated circuits and transistors. As a leading supplier of advanced materials, Goodfellow offers high-quality silicon single crystals with precisely controlled dimensions and dopant concentrations.
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Tolerances

Single Crystal
Orientation See Item
Thickness +2% / -1%
Length +2% / -1%

Material Properties for Metals

Atomic Properties
Mechanical Properties
Electrical Properties
Physical Properties
Thermal Properties
Atomic Properties
Element Value
Atomic number 14
Crystal structure Diamond
Electronic structure Ne 3s² 3p²
Valences shown 4
Atomic weight( amu ) 28.0855
Thermal neutron absorption cross-section( Barns ) 0.16
Photo-electric work function( eV ) 4.2
Natural isotope distribution( Mass No./% ) 30/ 3.10
Natural isotope distribution( Mass No./% ) 29/ 4.67
Natural isotope distribution( Mass No./% ) 28/ 92.23
Atomic radius - Goldschmidt( nm ) 0.117
Ionisation potential( No./eV ) 5/ 167
Ionisation potential( No./eV ) 1/ 8.15
Ionisation potential( No./eV ) 2/ 16.3
Ionisation potential( No./eV ) 3/ 33.5
Ionisation potential( No./eV ) 4/ 45.1
Ionisation potential( No./eV ) 6/ 205
Mechanical Properties
Element Value
Hardness - Mohs 7
Material condition Polycrystalline
Poisson's ratio 0.42
Bulk modulus( GPa ) 100
Tensile modulus( GPa ) 113
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 23 x 10¹⁰@20@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) -41.56
Physical Properties
Element Value
Boiling point( C ) 2355
Density( gcm⁻³ ) 2.34@20°C
Thermal Properties
Element Value
Melting point( C ) 1410
Latent heat of evaporation( J g⁻¹ ) 13700
Latent heat of fusion( J g⁻¹ ) 1650
Specific heat( J K⁻¹ kg⁻¹ ) 703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 4.7-7.6@0-100°C

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