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Formula: C
Form: Sputtering Target
Material: Carbon
CAS Number: 7440-44-0
Commodity: Metals
Purity:
99.997%
Our range of Carbon Sputtering Targets are high-purity carbon targets used for thin film deposition. With 16 size variations, they provide customizable sputtering options. Their dense graphitic carbon structure ensures uniform, directional deposition critical for coating precision optics or electronics. Carbon films deposited using these target disks enable cutting-edge applications like hard protective coatings, optical filters and integrated circuit components.
Material Properties for Metals
Atomic Properties
| Element | Value |
|---|---|
| Atomic number | 6 |
| Crystal structure | Hexagonal/Diamond |
| Electronic structure | He 2s² 2p² |
| Valences shown | 2, 3, 4 |
| Atomic weight( amu ) | 12.011 |
| Thermal neutron absorption cross-section( Barns ) | 0.0034 |
| Photo-electric work function( eV ) | 4.8 |
| Natural isotope distribution( Mass No./% ) | 12/ 98.89 |
| Natural isotope distribution( Mass No./% ) | 13/ 1.11 |
| Atomic radius - Goldschmidt( nm ) | 0.077 |
| Ionisation potential( No./eV ) | 6/ 490 |
| Ionisation potential( No./eV ) | 4/ 64.5 |
| Ionisation potential( No./eV ) | 1/ 11.26 |
| Ionisation potential( No./eV ) | 3/ 47.9 |
| Ionisation potential( No./eV ) | 2/ 24.38 |
| Ionisation potential( No./eV ) | 5/ 392 |
Mechanical Properties
| Element | Value |
|---|---|
| Hardness - Mohs | 0.5-1 |
| Hardness - Mohs | 10 |
| Material condition | Diamond |
| Material condition | Graphite |
| Bulk modulus( GPa ) | 33 |
| Bulk modulus( GPa ) | 542 |
| Tensile modulus( GPa ) | 4.8 |
Electrical Properties
| Element | Value |
|---|---|
| Electrical resistivity( µOhmcm ) | 1375@0@0°C |
| Thermal emf against Pt (cold 0C - hot 100C)( mV ) | 0.7 |
Physical Properties
| Element | Value |
|---|---|
| Boiling point( C ) | 5000 |
| Density( gcm⁻³ ) | 2.25@20°C |
Thermal Properties
| Element | Value |
|---|---|
| Melting point( C ) | 3650 |
| Specific heat( J K⁻¹ kg⁻¹ ) | 712@25°C |
| Thermal conductivity( W m⁻¹ K⁻¹ ) | 80-240@0-100°C |
| Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) | 0.6-4.3@0-100°C |