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Formula: WSi₂
Form: Sputtering Target
Material: Tungsten Silicide
CAS Number: 12039-88-2
Commodity: Compounds
Thickness:
3mm
Diameter:
50.8mm
Tungsten Silicide Sputtering Targets are a high-performance material with a high melting point and excellent conductivity. These properties make tungsten silicide valued for thin film deposition applications like microelectronics fabrication. These precision-engineered targets enable efficient, uniform coatings in semiconductor production and related manufacturing.
Material Properties for Compounds
Physical Properties
| Element | Value |
|---|---|
| Density( gcm⁻³ ) | 9.4 |
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Tantalum Silicide Powder Formula: TaSi₂
Percentage Purity: 99%
Maximum Particle Size: 45µm
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Iron Silicide Powder Formula: FeSi
Percentage Purity: 99.99%
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Niobium Silicide Powder Formula: NbSi₂
Percentage Purity: 99%
Maximum Particle Size: 45µm
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Titanium Silicide Powder Formula: TiSi₂
Percentage Purity: 99%
Maximum Particle Size: 45µm
Weight: 1000g
CAS Number: 12039-83-7
UOM Code: 079-658-38
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Tungsten Silicide Powder Formula: WSi₂
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Molybdenum Disilicide Powder Formula: MoSi₂
Percentage Purity: 99.5%
Minimum Particle Size: 3µm
Maximum Particle Size: 18µm
Weight: 25g
CAS Number: 12136-78-6
UOM Code: 100-101-55
eachStarting at $215.81
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