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Formula: Tb
Form: Sputtering Target
Material: Terbium
CAS Number: 7440-27-9
Commodity: Metals
Purity: 99%
Thickness: 1mm
Terbium Sputtering Target offers high purity, magnetic responsiveness, and unique magneto-optical behavior in a precisely engineered disk form optimized for thin-film deposition. Its use in sputtering systems enables the creation of coatings for magneto-optical storage devices, magnetostrictive sensors, and phosphor-based display components. Industries employ terbium sputtering targets for developing Terfenol-D films in sonar transducers, advanced green phosphor coatings for energy-efficient displays, and optical isolators in high-powered laser systems. In research, they support fabrication of rare-earth thin films for spintronic devices, optical modulators, and experimental magnetic refrigeration materials. The target’s consistent density and composition ensure uniform sputtering rates and reproducible film properties, making it a vital material in both manufacturing and R&D of magnetic and optical technologies.
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Material Properties for Metals

Atomic Properties
Element Value
Atomic number 65
Crystal structure Hexagonal close packed
Electronic structure Xe 4f⁹ 6s²
Valences shown 3,4
Atomic weight( amu ) 158.9254
Thermal neutron absorption cross-section( Barns ) 30
Photo-electric work function( eV ) 3
Atomic radius - Goldschmidt( nm ) 0.177
Ionisation potential( No./eV ) 2/ 11.52
Ionisation potential( No./eV ) 1/ 5.85
Mechanical Properties
Element Value
Material condition Polycrystalline
Poisson's ratio 0.265
Bulk modulus( GPa ) 40.8
Tensile modulus( GPa ) 57.5
Hardness - Vickers( kgf mm⁻² ) 60
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 116@20@20°C
Physical Properties
Element Value
Boiling point( C ) 3123
Density( gcm⁻³ ) 8.272@20°C
Thermal Properties
Element Value
Melting point( C ) 1356
Latent heat of evaporation( J g⁻¹ ) 1840
Latent heat of fusion( J g⁻¹ ) 103
Specific heat( J K⁻¹ kg⁻¹ ) 183@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 11.1@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 7@0-100°C

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