Tantalum Sputtering Target

Tantalum Sputtering Target provides high-purity tantalum in a form optimized for thin-film deposition using PVD processes. With uniform density, fine grain structure, and low impurity levels, it enables consistent coating thickness, strong adhesion, and minimal contamination. Industries such as microelectronics, optics, and energy systems use tantalum sputtering targets for barrier layers in semiconductor devices, optical coatings, and corrosion-resistant films. Specific applications include fabricating diffusion barriers in integrated circuits, producing reflective coatings for precision optics, and depositing protective layers in chemical reactors. In research, tantalum sputtering targets facilitate development of multilayer coatings, thin-film superconductors, and advanced MEMS devices. Their ability to produce precision-engineered films ensures critical performance in high-technology manufacturing.

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Properties

Reference & Citations

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	73
Crystal structure	Body centred cubic
Electronic structure	Xe 4f¹⁴ 5d³ 6s²
Valences shown	2,3,4,5
Atomic weight( amu )	180.9479
Thermal neutron absorption cross-section( Barns )	22
Photo-electric work function( eV )	4.1
Natural isotope distribution( Mass No./% )	180/ 0.012
Natural isotope distribution( Mass No./% )	181/ 99.988
Atomic radius - Goldschmidt( nm )	0.147
Ionisation potential( No./eV )	1/ 7.88
Ionisation potential( No./eV )	2/ 16.2

Mechanical Properties

Element	Value
Material condition	Hard
Material condition	Soft
Poisson's ratio	0.342
Poisson's ratio	0.342
Bulk modulus( GPa )	196.3
Bulk modulus( GPa )	196.3
Tensile modulus( GPa )	185.7
Tensile modulus( GPa )	185.7
Hardness - Vickers( kgf mm⁻² )	200
Hardness - Vickers( kgf mm⁻² )	90
Tensile strength( MPa )	760
Tensile strength( MPa )	172-207
Yield strength( MPa )	705
Yield strength( MPa )	310-380

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	13.5@20@20°C
Superconductivity critical temperature( K )	4.47
Temperature coefficient( K⁻¹ )	0.0035@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.33

Physical Properties

Element	Value
Boiling point( C )	5425
Density( gcm⁻³ )	16.6@20°C

Thermal Properties

Element	Value
Melting point( C )	2996
Latent heat of evaporation( J g⁻¹ )	4165
Latent heat of fusion( J g⁻¹ )	174
Specific heat( J K⁻¹ kg⁻¹ )	140@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	57.5@0-100
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	6.5@0-100°C