Tantalum Disk Single Crystal

Tantalum Disk Single Crystal delivers unmatched chemical resistance, ductility, and high-temperature stability in a precisely machined, monocrystalline disk format. The defect-free crystal structure ensures uniform mechanical and thermal properties, making it ideal for high-purity electronic components, diffusion bonding, and sputtering targets for semiconductor applications. Industries such as microelectronics, aerospace, and high-vacuum technology use tantalum single-crystal disks in critical sealing interfaces, precision measurement devices, and thin-film deposition systems. Research employs them in crystallographic studies, advanced bonding experiments, and surface treatment development. The combination of perfect lattice structure and disk geometry ensures precision, purity, and reliability in demanding industrial and research environments.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Single Crystal

Orientation		See Item
Thickness		+2% / -1%
Length		+2% / -1%

Disk

Diameter		+2% / -1%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	73
Crystal structure	Body centred cubic
Electronic structure	Xe 4f¹⁴ 5d³ 6s²
Valences shown	2,3,4,5
Atomic weight( amu )	180.9479
Thermal neutron absorption cross-section( Barns )	22
Photo-electric work function( eV )	4.1
Natural isotope distribution( Mass No./% )	180/ 0.012
Natural isotope distribution( Mass No./% )	181/ 99.988
Atomic radius - Goldschmidt( nm )	0.147
Ionisation potential( No./eV )	1/ 7.88
Ionisation potential( No./eV )	2/ 16.2

Mechanical Properties

Element	Value
Material condition	Hard
Material condition	Soft
Poisson's ratio	0.342
Poisson's ratio	0.342
Bulk modulus( GPa )	196.3
Bulk modulus( GPa )	196.3
Tensile modulus( GPa )	185.7
Tensile modulus( GPa )	185.7
Hardness - Vickers( kgf mm⁻² )	200
Hardness - Vickers( kgf mm⁻² )	90
Tensile strength( MPa )	760
Tensile strength( MPa )	172-207
Yield strength( MPa )	705
Yield strength( MPa )	310-380

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	13.5@20@20°C
Superconductivity critical temperature( K )	4.47
Temperature coefficient( K⁻¹ )	0.0035@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.33

Physical Properties

Element	Value
Boiling point( C )	5425
Density( gcm⁻³ )	16.6@20°C

Thermal Properties

Element	Value
Melting point( C )	2996
Latent heat of evaporation( J g⁻¹ )	4165
Latent heat of fusion( J g⁻¹ )	174
Specific heat( J K⁻¹ kg⁻¹ )	140@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	57.5@0-100
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	6.5@0-100°C