Iridium Sputtering Target

Iridium Sputtering Target provides excellent stability, corrosion resistance, and uniform thin-film deposition capability, making it essential for advanced electronics, energy, and biomedical systems. Industries use iridium sputtering targets in producing durable electrodes, protective coatings, and conductive films. Technologies benefiting include thin-film resistors, neural stimulation electrodes, and transparent conductive coatings for optoelectronics. Research explores sputtered iridium film morphologies, interfacial stability, and optimization of deposition conditions for biomedical implants and microelectronic devices. The target format ensures reproducibility, controlled deposition, and scalability across laboratory and industrial systems. By combining iridium’s unique chemical stability with precision thin-film capabilities, sputtering targets play a critical role in enabling next-generation electronic, biomedical, and energy storage technologies.

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Properties

Reference & Citations

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Material Properties for Precious Metals

Atomic Properties

Element	Value
Atomic number	77
Crystal structure	Face centred cubic
Electronic structure	Xe 4f¹⁴ 5d⁷ 6s²
Valences shown	3, 4
Atomic weight( amu )	192.22
Thermal neutron absorption cross-section( Barns )	425
Photo-electric work function( eV )	4.6
Natural isotope distribution( Mass No./% )	191/ 37.3
Natural isotope distribution( Mass No./% )	193/ 62.7
Atomic radius - Goldschmidt( nm )	0.135

Mechanical Properties

Element	Value
Material condition	Soft
Material condition	Hard
Poisson's ratio	0.26
Poisson's ratio	0.26
Bulk modulus( GPa )	371
Bulk modulus( GPa )	371
Tensile modulus( GPa )	528
Tensile modulus( GPa )	528
Hardness - Vickers( kgf mm⁻² )	650
Hardness - Vickers( kgf mm⁻² )	200-300
Tensile strength( MPa )	550-1100
Tensile strength( MPa )	1200

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	5.1@20@20°C
Superconductivity critical temperature( K )	0.11
Temperature coefficient( K⁻¹ )	0.0045@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.65

Physical Properties

Element	Value
Boiling point( C )	4130
Density( gcm⁻³ )	22.4@20°C

Thermal Properties

Element	Value
Melting point( C )	2410
Latent heat of evaporation( J g⁻¹ )	3186
Latent heat of fusion( J g⁻¹ )	135
Specific heat( J K⁻¹ kg⁻¹ )	133@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	147@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	6.8@0-100°C