Grade 25 Silicon Balls

Grade 25 Silicon Balls are defined by their high hardness, thermal stability, and excellent semiconductor properties, making them essential in both precision mechanical and electronic applications. Produced as polycrystallin silicon, these balls exhibit precise dimensional control and stability under high-temperature and corrosive environments. They are used widely in semiconductor, aerospace, optoelectronics, and renewable energy industries. Specific applications include precision bearings in semiconductor processing equipment, substrates for high-frequency electronic components, and photovoltaic system elements where durability and purity are crucial. In research, silicon balls are studied for their role in advanced lithography, nanoscale semiconductor devices, and microelectromechanical systems (MEMS). Their balance of hardness, semiconducting behavior, and structural stability ensures they remain a key material in advancing both industrial technologies and frontier scientific innovations.

Quick Links:

Tolerance

Properties

Reference & Citations

each

Tolerances

Ball/Sphere

Diameter	Standard	±5%
Diameter	Precision	See Item

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	14
Crystal structure	Diamond
Electronic structure	Ne 3s² 3p²
Valences shown	4
Atomic weight( amu )	28.0855
Thermal neutron absorption cross-section( Barns )	0.16
Photo-electric work function( eV )	4.2
Natural isotope distribution( Mass No./% )	30/ 3.10
Natural isotope distribution( Mass No./% )	29/ 4.67
Natural isotope distribution( Mass No./% )	28/ 92.23
Atomic radius - Goldschmidt( nm )	0.117
Ionisation potential( No./eV )	5/ 167
Ionisation potential( No./eV )	1/ 8.15
Ionisation potential( No./eV )	2/ 16.3
Ionisation potential( No./eV )	3/ 33.5
Ionisation potential( No./eV )	4/ 45.1
Ionisation potential( No./eV )	6/ 205

Mechanical Properties

Element	Value
Hardness - Mohs	7
Material condition	Polycrystalline
Poisson's ratio	0.42
Bulk modulus( GPa )	100
Tensile modulus( GPa )	113

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	23 x 10¹⁰@20@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	-41.56

Physical Properties

Element	Value
Boiling point( C )	2355
Density( gcm⁻³ )	2.34@20°C

Thermal Properties

Element	Value
Melting point( C )	1410
Latent heat of evaporation( J g⁻¹ )	13700
Latent heat of fusion( J g⁻¹ )	1650
Specific heat( J K⁻¹ kg⁻¹ )	703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	4.7-7.6@0-100°C