Gold Sputtering Target

Gold Sputtering Target is a high-purity gold source material engineered for thin-film deposition using sputtering techniques, delivering exceptional uniformity and reproducibility in coating applications. Its optimized grain structure and controlled Vickers hardness enable consistent sputter yields and precise film thickness control, critical for microelectronics, photonics, and high-performance optics. Primary uses include semiconductor metallization, reflective optical coatings, and corrosion-resistant contact layers in advanced device manufacturing. Specific technologies benefiting from gold sputtering targets include plasmonic nanostructure fabrication, MEMS device encapsulation, and high-efficiency photovoltaic cell coating. The preferential crystal orientation ({110} planes) in the sputtering surface enhances deposition stability and film adhesion. In both research and industrial contexts, Gold Sputtering Target supports innovation in nanoscale electronics, quantum devices, and photonic integration, enabling scalable, defect-minimized coatings essential to cutting-edge engineering.

Quick Links:

Properties

Reference & Citations

each

Material Properties for Precious Metals

Atomic Properties

Element	Value
Atomic number	79
Crystal structure	Face centred cubic
Electronic structure	Xe 4f¹⁴ 5d¹⁰ 6s¹
Valences shown	1,3
Atomic weight( amu )	196.9665
Thermal neutron absorption cross-section( Barns )	98.8
Photo-electric work function( eV )	4.8
Atomic radius - Goldschmidt( nm )	0.144
Ionisation potential( No./eV )	1/ 9.22
Ionisation potential( No./eV )	2/ 20.5

Mechanical Properties

Element	Value
Material condition	Soft
Material condition	Hard
Poisson's ratio	0.42
Poisson's ratio	0.42
Bulk modulus( GPa )	171
Bulk modulus( GPa )	171
Tensile modulus( GPa )	78.5
Tensile modulus( GPa )	78.5
Hardness - Vickers( kgf mm⁻² )	20-30
Hardness - Vickers( kgf mm⁻² )	60
Tensile strength( MPa )	130
Tensile strength( MPa )	220
Yield strength( MPa )	205
Yield strength( MPa )	-

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	2.20@20@20°C
Temperature coefficient( K⁻¹ )	0.004@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.74

Physical Properties

Element	Value
Boiling point( C )	3080
Density( gcm⁻³ )	19.3@20°C

Thermal Properties

Element	Value
Melting point( C )	1064.4
Latent heat of evaporation( J g⁻¹ )	1738
Latent heat of fusion( J g⁻¹ )	64.9
Specific heat( J K⁻¹ kg⁻¹ )	129@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	318@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	14.1@0-100°C