Gold Disk Single Crystal

Gold Disk Single Crystal provides a defect-free, monocrystalline surface with unmatched electronic uniformity, high reflectivity, and precise crystallographic orientation. Produced through controlled growth methods, such as epitaxial deposition or chemical etching, these disks exhibit atomically flat surfaces ideal for advanced nanophotonic, plasmonic, and quantum applications. They are pivotal in fields like optoelectronics, nanoplasmonics, and catalysis, where minimal grain boundaries enhance performance and reproducibility. Key uses include surface-enhanced Raman spectroscopy (SERS) substrates, high-Q plasmonic resonators, and platforms for strong light–matter coupling with 2D materials. Their precision structure supports technologies in photonic quantum computing, ultra-sensitive sensing, and nano-patterned device fabrication. Gold Disk Single Crystal plays an essential role in research pushing the limits of coherent light manipulation and nanoscale device engineering, serving as a gold standard substrate in both academic and industrial innovation.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Single Crystal

Orientation		See Item
Thickness		+2% / -1%
Length		+2% / -1%

Disk

Diameter		+2% / -1%

Material Properties for Precious Metals

Atomic Properties

Element	Value
Atomic number	79
Crystal structure	Face centred cubic
Electronic structure	Xe 4f¹⁴ 5d¹⁰ 6s¹
Valences shown	1,3
Atomic weight( amu )	196.9665
Thermal neutron absorption cross-section( Barns )	98.8
Photo-electric work function( eV )	4.8
Atomic radius - Goldschmidt( nm )	0.144
Ionisation potential( No./eV )	1/ 9.22
Ionisation potential( No./eV )	2/ 20.5

Mechanical Properties

Element	Value
Material condition	Soft
Material condition	Hard
Poisson's ratio	0.42
Poisson's ratio	0.42
Bulk modulus( GPa )	171
Bulk modulus( GPa )	171
Tensile modulus( GPa )	78.5
Tensile modulus( GPa )	78.5
Hardness - Vickers( kgf mm⁻² )	20-30
Hardness - Vickers( kgf mm⁻² )	60
Tensile strength( MPa )	130
Tensile strength( MPa )	220
Yield strength( MPa )	205
Yield strength( MPa )	-

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	2.20@20@20°C
Temperature coefficient( K⁻¹ )	0.004@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.74

Physical Properties

Element	Value
Boiling point( C )	3080
Density( gcm⁻³ )	19.3@20°C

Thermal Properties

Element	Value
Melting point( C )	1064.4
Latent heat of evaporation( J g⁻¹ )	1738
Latent heat of fusion( J g⁻¹ )	64.9
Specific heat( J K⁻¹ kg⁻¹ )	129@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	318@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	14.1@0-100°C