Tungsten Thin Film Disk (Mylar® Backing)

Tungsten Thin Film Disk combines the high density, hardness, and thermal conductivity of tungsten with a precision-machined disk format optimized for use as substrates, mirrors, or calibration standards in thin-film applications. Its geometry supports uniform thin-film growth, making it ideal for semiconductor research, high-power optics, and superconducting device fabrication. Specific uses include serving as a deposition substrate for multilayer coatings, functioning as calibration weights in precision balances, and acting as a heat spreader in laser assemblies. In research, tungsten thin film disks are integral for testing coating adhesion, evaluating thermal management strategies, and fabricating high-frequency electronic components. The form’s dimensional accuracy and surface quality, coupled with tungsten’s inherent stability, ensure performance in both experimental and production environments.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Thin Film

Thickness		±30%

Disk

Diameter		±20%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	74
Crystal structure	Body centred cubic
Electronic structure	Xe 4f¹⁴ 5d⁴ 6s²
Valences shown	2,3,4,5,6
Atomic weight( amu )	183.85
Thermal neutron absorption cross-section( Barns )	18.5
Photo-electric work function( eV )	4.55
Natural isotope distribution( Mass No./% )	183/ 14.3
Natural isotope distribution( Mass No./% )	182/ 26.3
Natural isotope distribution( Mass No./% )	186/ 28.6
Natural isotope distribution( Mass No./% )	180/ 0.1
Natural isotope distribution( Mass No./% )	184/ 30.7
Atomic radius - Goldschmidt( nm )	0.141
Ionisation potential( No./eV )	1/ 7.98
Ionisation potential( No./eV )	2/ 17.7

Mechanical Properties

Element	Value
Material condition	Soft
Material condition	Hard
Poisson's ratio	0.28
Poisson's ratio	0.28
Bulk modulus( GPa )	311
Bulk modulus( GPa )	311
Tensile modulus( GPa )	411
Tensile modulus( GPa )	411
Hardness - Vickers( kgf mm⁻² )	360
Hardness - Vickers( kgf mm⁻² )	500
Tensile strength( MPa )	550-620
Tensile strength( MPa )	1920
Yield strength( MPa )	550

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	5.4@20@20°C
Superconductivity critical temperature( K )	0.0154
Temperature coefficient( K⁻¹ )	0.0048@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	1.12

Physical Properties

Element	Value
Boiling point( C )	5660
Density( gcm⁻³ )	19.3@20°C

Thermal Properties

Element	Value
Melting point( C )	3410
Latent heat of evaporation( J g⁻¹ )	4009
Latent heat of fusion( J g⁻¹ )	192
Specific heat( J K⁻¹ kg⁻¹ )	133@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	173@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	4.5@0-100°C