Tin Thin Film Disk (Mylar® Backing)

Tin Thin Film Disk provides a precisely machined, uniform thin section of tin, tailored for optical, electronic, and analytical applications. Its corrosion resistance, solderability, and good electrical conductivity make it suitable for thin-film experiments, calibration standards, and substrate preparation. Industries such as electronics, materials science, and optical engineering use tin thin film disks for spectroscopic reference materials, thin-layer coatings, and experimental sensor development. Specific uses include serving as a standard in X-ray fluorescence (XRF) analysis, forming seed layers in microfabrication, and acting as thin anodes in electrochemical testing. The disk geometry ensures consistency in both physical dimensions and material properties, enabling high repeatability in research and production workflows.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Thin Film

Thickness		±30%

Disk

Diameter		±20%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	50
Crystal structure	Tetragonal
Electronic structure	Kr 4d¹⁰ 5s² 5p²
Valences shown	2,4
Atomic weight( amu )	118.69
Thermal neutron absorption cross-section( Barns )	0.63
Photo-electric work function( eV )	4.3
Natural isotope distribution( Mass No./% )	122/ 4.6
Natural isotope distribution( Mass No./% )	124/ 5.6
Natural isotope distribution( Mass No./% )	114/ 0.7
Natural isotope distribution( Mass No./% )	120/ 32.4
Natural isotope distribution( Mass No./% )	118/ 24.3
Natural isotope distribution( Mass No./% )	112/ 1.0
Natural isotope distribution( Mass No./% )	116/ 14.7
Natural isotope distribution( Mass No./% )	115/ 0.4
Natural isotope distribution( Mass No./% )	117/ 7.7
Natural isotope distribution( Mass No./% )	119/ 8.6
Atomic radius - Goldschmidt( nm )	0.158
Ionisation potential( No./eV )	2/ 14.63
Ionisation potential( No./eV )	5/ 72.3
Ionisation potential( No./eV )	3/ 30.5
Ionisation potential( No./eV )	4/ 40.7
Ionisation potential( No./eV )	1/ 7.34

Mechanical Properties

Element	Value
Hardness - Mohs	1.5-1.8
Material condition	Polycrystalline
Poisson's ratio	0.357
Bulk modulus( GPa )	58.2
Tensile modulus( GPa )	49.9

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	12.6@20@20°C
Superconductivity critical temperature( K )	3.722
Temperature coefficient( K⁻¹ )	0.0046@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.42

Physical Properties

Element	Value
Boiling point( C )	2270
Density( gcm⁻³ )	7.28@20°C

Thermal Properties

Element	Value
Melting point( C )	231.9
Latent heat of evaporation( J g⁻¹ )	2497
Latent heat of fusion( J g⁻¹ )	59.6
Specific heat( J K⁻¹ kg⁻¹ )	213@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	66.8@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	23.5@0-100°C