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Formula: Sn
Form: Thin Film
Material: Tin
CAS Number: 7440-31-5
Commodity: Metals
Purity:
99.999%
Goodfellow provides tin thin film disks with a maximum purity of 99.999% (5N), catering to specialized applications in electronics and materials science. In thin film form, tin offers unique possibilities for surface coatings, semiconductor devices, and optoelectronic applications. Its low melting point and excellent wetting properties make it valuable in the production of advanced interconnects and in studying thin film behavior. In the field of superconductivity research, high-purity tin thin films are essential for fabricating and studying Josephson junctions. Their use in the development of next-generation batteries and energy storage devices showcases their potential in emerging energy technologies. The ongoing exploration of tin-based 2D materials further emphasizes its importance in cutting-edge nanomaterials research and quantum electronics.
Tolerances
Thin Film
| Thickness | ±30% |
|---|
Disk
| Diameter | ±20% |
|---|
Material Properties for Metals
Atomic Properties
| Element | Value |
|---|---|
| Atomic number | 50 |
| Crystal structure | Tetragonal |
| Electronic structure | Kr 4d¹⁰ 5s² 5p² |
| Valences shown | 2,4 |
| Atomic weight( amu ) | 118.69 |
| Thermal neutron absorption cross-section( Barns ) | 0.63 |
| Photo-electric work function( eV ) | 4.3 |
| Natural isotope distribution( Mass No./% ) | 122/ 4.6 |
| Natural isotope distribution( Mass No./% ) | 124/ 5.6 |
| Natural isotope distribution( Mass No./% ) | 114/ 0.7 |
| Natural isotope distribution( Mass No./% ) | 120/ 32.4 |
| Natural isotope distribution( Mass No./% ) | 118/ 24.3 |
| Natural isotope distribution( Mass No./% ) | 112/ 1.0 |
| Natural isotope distribution( Mass No./% ) | 116/ 14.7 |
| Natural isotope distribution( Mass No./% ) | 115/ 0.4 |
| Natural isotope distribution( Mass No./% ) | 117/ 7.7 |
| Natural isotope distribution( Mass No./% ) | 119/ 8.6 |
| Atomic radius - Goldschmidt( nm ) | 0.158 |
| Ionisation potential( No./eV ) | 2/ 14.63 |
| Ionisation potential( No./eV ) | 5/ 72.3 |
| Ionisation potential( No./eV ) | 3/ 30.5 |
| Ionisation potential( No./eV ) | 4/ 40.7 |
| Ionisation potential( No./eV ) | 1/ 7.34 |
Mechanical Properties
| Element | Value |
|---|---|
| Hardness - Mohs | 1.5-1.8 |
| Material condition | Polycrystalline |
| Poisson's ratio | 0.357 |
| Bulk modulus( GPa ) | 58.2 |
| Tensile modulus( GPa ) | 49.9 |
Electrical Properties
| Element | Value |
|---|---|
| Electrical resistivity( µOhmcm ) | 12.6@20@20°C |
| Superconductivity critical temperature( K ) | 3.722 |
| Temperature coefficient( K⁻¹ ) | 0.0046@0-100°C |
| Thermal emf against Pt (cold 0C - hot 100C)( mV ) | 0.42 |
Physical Properties
| Element | Value |
|---|---|
| Boiling point( C ) | 2270 |
| Density( gcm⁻³ ) | 7.28@20°C |
Thermal Properties
| Element | Value |
|---|---|
| Melting point( C ) | 231.9 |
| Latent heat of evaporation( J g⁻¹ ) | 2497 |
| Latent heat of fusion( J g⁻¹ ) | 59.6 |
| Specific heat( J K⁻¹ kg⁻¹ ) | 213@25°C |
| Thermal conductivity( W m⁻¹ K⁻¹ ) | 66.8@0-100°C |
| Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) | 23.5@0-100°C |
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VICTREX® APTIV® 1000 PEEK Film Grade: VICTREX® APTIV® 1000
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