Tin Thin Film Disk

Formula: Sn

Form: Thin Film

Material: Tin

CAS Number: 7440-31-5

Commodity: Metals

Purity: 99.999%

Goodfellow provides tin thin film disks with a maximum purity of 99.999% (5N), catering to specialized applications in electronics and materials science. In thin film form, tin offers unique possibilities for surface coatings, semiconductor devices, and optoelectronic applications. Its low melting point and excellent wetting properties make it valuable in the production of advanced interconnects and in studying thin film behavior. In the field of superconductivity research, high-purity tin thin films are essential for fabricating and studying Josephson junctions. Their use in the development of next-generation batteries and energy storage devices showcases their potential in emerging energy technologies. The ongoing exploration of tin-based 2D materials further emphasizes its importance in cutting-edge nanomaterials research and quantum electronics.

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Technical Data Sheet Safety Data Sheet Tolerance Properties

each

Tolerances

Thin Film

Thickness		±30%

Disk

Diameter		±20%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	50
Crystal structure	Tetragonal
Electronic structure	Kr 4d¹⁰ 5s² 5p²
Valences shown	2,4
Atomic weight( amu )	118.69
Thermal neutron absorption cross-section( Barns )	0.63
Photo-electric work function( eV )	4.3
Natural isotope distribution( Mass No./% )	122/ 4.6
Natural isotope distribution( Mass No./% )	124/ 5.6
Natural isotope distribution( Mass No./% )	114/ 0.7
Natural isotope distribution( Mass No./% )	120/ 32.4
Natural isotope distribution( Mass No./% )	118/ 24.3
Natural isotope distribution( Mass No./% )	112/ 1.0
Natural isotope distribution( Mass No./% )	116/ 14.7
Natural isotope distribution( Mass No./% )	115/ 0.4
Natural isotope distribution( Mass No./% )	117/ 7.7
Natural isotope distribution( Mass No./% )	119/ 8.6
Atomic radius - Goldschmidt( nm )	0.158
Ionisation potential( No./eV )	2/ 14.63
Ionisation potential( No./eV )	5/ 72.3
Ionisation potential( No./eV )	3/ 30.5
Ionisation potential( No./eV )	4/ 40.7
Ionisation potential( No./eV )	1/ 7.34

Mechanical Properties

Element	Value
Hardness - Mohs	1.5-1.8
Material condition	Polycrystalline
Poisson's ratio	0.357
Bulk modulus( GPa )	58.2
Tensile modulus( GPa )	49.9

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	12.6@20@20°C
Superconductivity critical temperature( K )	3.722
Temperature coefficient( K⁻¹ )	0.0046@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.42

Physical Properties

Element	Value
Boiling point( C )	2270
Density( gcm⁻³ )	7.28@20°C

Thermal Properties

Element	Value
Melting point( C )	231.9
Latent heat of evaporation( J g⁻¹ )	2497
Latent heat of fusion( J g⁻¹ )	59.6
Specific heat( J K⁻¹ kg⁻¹ )	213@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	66.8@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	23.5@0-100°C

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Tin Thin Film Disk

Tolerances

Material Properties for Metals