Rhodium Thin Film Disk

Rhodium Thin Film Disk is a product within Goodfellow's range of metallic thin film disks. Available in 7 different variations, these disks are made of rhodium deposited on Mylar® polyester film. With excellent reflectivity, chemical inertness, and durability, rhodium thin films have applications in mirrors, optical coatings, and as a substrate for catalytic reactions. The Goodfellow range of Rhodium Thin Film disks offers researchers and engineers a convenient source of uniform rhodium films for prototyping and small-scale production.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Thin Film

Thickness		±30%

Disk

Diameter		±20%

Material Properties for Precious Metals

Atomic Properties

Element	Value
Atomic number	45
Crystal structure	Face centred cubic
Electronic structure	Kr 4d⁸ 5s¹
Valences shown	2,3,4,5,6
Atomic weight( amu )	102.9055
Thermal neutron absorption cross-section( Barns )	150
Photo-electric work function( eV )	4.6
Atomic radius - Goldschmidt( nm )	0.134
Ionisation potential( No./eV )	1/ 7.46
Ionisation potential( No./eV )	3/ 31.1
Ionisation potential( No./eV )	2/ 18.1

Mechanical Properties

Element	Value
Material condition	Hard
Material condition	Soft
Poisson's ratio	0.26
Poisson's ratio	0.26
Bulk modulus( GPa )	276
Bulk modulus( GPa )	276
Tensile modulus( GPa )	379
Tensile modulus( GPa )	379
Hardness - Vickers( kgf mm⁻² )	300
Hardness - Vickers( kgf mm⁻² )	120
Tensile strength( MPa )	1380-2070
Tensile strength( MPa )	690-760
Yield strength( MPa )	69-275

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	4.7@20@20°C
Temperature coefficient( K⁻¹ )	0.0044@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.7

Physical Properties

Element	Value
Boiling point( C )	3727
Density( gcm⁻³ )	12.4@20°C

Thermal Properties

Element	Value
Melting point( C )	1965
Latent heat of evaporation( J g⁻¹ )	4800
Latent heat of fusion( J g⁻¹ )	210
Specific heat( J K⁻¹ kg⁻¹ )	244@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	8.5@0-100°C