Rhodium Thin Film Disk (Mylar® Backing)

Rhodium Thin Film Disk provides excellent surface reflectivity, chemical inertness, and wear resistance in a precisely machined, thin circular form. Its format is ideal for optical coating substrates, reference electrodes, and catalytic layers. Industries such as optics, electronics, and environmental technology utilize rhodium thin film disks for mirrors in high-intensity light systems, durable reference electrodes in electrochemistry, and catalytic surfaces for emission control. Specific uses include precision reflectors in spectroscopic equipment, substrates for thin-film deposition, and active components in advanced catalytic converters. In research, these disks are critical in surface science, optical metrology, and thin-film growth studies. Their combination of geometry, durability, and material purity ensures relevance in cutting-edge applications.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Thin Film

Thickness		±30%

Disk

Diameter		±20%

Material Properties for Precious Metals

Atomic Properties

Element	Value
Atomic number	45
Crystal structure	Face centred cubic
Electronic structure	Kr 4d⁸ 5s¹
Valences shown	2,3,4,5,6
Atomic weight( amu )	102.9055
Thermal neutron absorption cross-section( Barns )	150
Photo-electric work function( eV )	4.6
Atomic radius - Goldschmidt( nm )	0.134
Ionisation potential( No./eV )	1/ 7.46
Ionisation potential( No./eV )	3/ 31.1
Ionisation potential( No./eV )	2/ 18.1

Mechanical Properties

Element	Value
Material condition	Hard
Material condition	Soft
Poisson's ratio	0.26
Poisson's ratio	0.26
Bulk modulus( GPa )	276
Bulk modulus( GPa )	276
Tensile modulus( GPa )	379
Tensile modulus( GPa )	379
Hardness - Vickers( kgf mm⁻² )	300
Hardness - Vickers( kgf mm⁻² )	120
Tensile strength( MPa )	1380-2070
Tensile strength( MPa )	690-760
Yield strength( MPa )	69-275

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	4.7@20@20°C
Temperature coefficient( K⁻¹ )	0.0044@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.7

Physical Properties

Element	Value
Boiling point( C )	3727
Density( gcm⁻³ )	12.4@20°C

Thermal Properties

Element	Value
Melting point( C )	1965
Latent heat of evaporation( J g⁻¹ )	4800
Latent heat of fusion( J g⁻¹ )	210
Specific heat( J K⁻¹ kg⁻¹ )	244@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	8.5@0-100°C