Iridium Thin Film Disk (Mylar® Backing)

Iridium Thin Film Disc offers high electrical conductivity, chemical inertness, and catalytic activity in a circular geometry coated with a thin, uniform iridium layer. This format is used in microelectronics, electrocatalysis, and sensor technologies. Industries rely on these discs for capacitor electrodes, reference electrodes, and thin-film resistors. Technologies benefiting include DRAM and FRAM memory devices, neural stimulation electrodes, and optoelectronic coatings. Research applications involve thin-film growth studies, electrode interface stability, and catalytic reaction kinetics. The disc ensures reproducible performance and uniform current distribution, while the thin film maximizes active surface area without compromising structural integrity. Its ability to combine geometry precision with iridium’s stability and conductivity makes it vital for advancing electronic, biomedical, and catalytic systems.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Thin Film

Thickness		±30%

Disk

Diameter		±20%

Material Properties for Precious Metals

Atomic Properties

Element	Value
Atomic number	77
Crystal structure	Face centred cubic
Electronic structure	Xe 4f¹⁴ 5d⁷ 6s²
Valences shown	3, 4
Atomic weight( amu )	192.22
Thermal neutron absorption cross-section( Barns )	425
Photo-electric work function( eV )	4.6
Natural isotope distribution( Mass No./% )	191/ 37.3
Natural isotope distribution( Mass No./% )	193/ 62.7
Atomic radius - Goldschmidt( nm )	0.135

Mechanical Properties

Element	Value
Material condition	Soft
Material condition	Hard
Poisson's ratio	0.26
Poisson's ratio	0.26
Bulk modulus( GPa )	371
Bulk modulus( GPa )	371
Tensile modulus( GPa )	528
Tensile modulus( GPa )	528
Hardness - Vickers( kgf mm⁻² )	650
Hardness - Vickers( kgf mm⁻² )	200-300
Tensile strength( MPa )	550-1100
Tensile strength( MPa )	1200

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	5.1@20@20°C
Superconductivity critical temperature( K )	0.11
Temperature coefficient( K⁻¹ )	0.0045@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.65

Physical Properties

Element	Value
Boiling point( C )	4130
Density( gcm⁻³ )	22.4@20°C

Thermal Properties

Element	Value
Melting point( C )	2410
Latent heat of evaporation( J g⁻¹ )	3186
Latent heat of fusion( J g⁻¹ )	135
Specific heat( J K⁻¹ kg⁻¹ )	133@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	147@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	6.8@0-100°C