Gold Thin Film Disk (Mylar® Backing)

Gold Thin Film Disk merges the optical, electrical, and chemical advantages of gold with the geometric precision of a disk format, offering a reproducible and scalable substrate for advanced photonic, sensing, and energy applications. The uniform thin-film layer—often on a dielectric base—ensures high reflectivity, excellent conductivity, and chemical stability. Industries leveraging this material include nanophotonics, biosensing, and optoelectronics. Specific uses include surface plasmon resonance (SPR) sensing platforms, high-efficiency optical absorbers, and micro-patterned electrodes for integrated circuits. Technologies such as nanoporous gold disks with high-density plasmonic “hot spots” enable enhanced molecular detection and tunable infrared resonances, while Fabry–Perot mode coupling in micro-disk structures supports improved nonlinear optical responses. Gold Thin Film Disks are essential for research seeking to push limits in light–matter interaction, energy conversion, and quantum sensing, offering both precision and versatility in high-performance industrial and scientific applications.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Thin Film

Thickness		±30%

Disk

Diameter		±20%

Material Properties for Precious Metals

Atomic Properties

Element	Value
Atomic number	79
Crystal structure	Face centred cubic
Electronic structure	Xe 4f¹⁴ 5d¹⁰ 6s¹
Valences shown	1,3
Atomic weight( amu )	196.9665
Thermal neutron absorption cross-section( Barns )	98.8
Photo-electric work function( eV )	4.8
Atomic radius - Goldschmidt( nm )	0.144
Ionisation potential( No./eV )	1/ 9.22
Ionisation potential( No./eV )	2/ 20.5

Mechanical Properties

Element	Value
Material condition	Soft
Material condition	Hard
Poisson's ratio	0.42
Poisson's ratio	0.42
Bulk modulus( GPa )	171
Bulk modulus( GPa )	171
Tensile modulus( GPa )	78.5
Tensile modulus( GPa )	78.5
Hardness - Vickers( kgf mm⁻² )	20-30
Hardness - Vickers( kgf mm⁻² )	60
Tensile strength( MPa )	130
Tensile strength( MPa )	220
Yield strength( MPa )	205
Yield strength( MPa )	-

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	2.20@20@20°C
Temperature coefficient( K⁻¹ )	0.004@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.74

Physical Properties

Element	Value
Boiling point( C )	3080
Density( gcm⁻³ )	19.3@20°C

Thermal Properties

Element	Value
Melting point( C )	1064.4
Latent heat of evaporation( J g⁻¹ )	1738
Latent heat of fusion( J g⁻¹ )	64.9
Specific heat( J K⁻¹ kg⁻¹ )	129@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	318@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	14.1@0-100°C