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Germanium Thin Film (Al Backing)

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Properties common to all products in this list

Composition: Ge Form: Thin Film Material: Germanium CAS Number: 7440-56-4 Commodity: Metals Purity: 99.9999% Support: Aluminium 6µm
Germanium Thin Film is a precision-engineered semiconductor layer known for its high refractive index, excellent infrared transmission, and compatibility with micro- and nano-fabrication processes. Produced via methods such as chemical vapor deposition, electron beam evaporation, and heteroepitaxial growth, these films exhibit uniform thickness, smooth surfaces, and tunable electronic properties. Industries employ germanium thin films in infrared optics, high-speed electronics, and photovoltaic devices. Specific applications include low-loss dielectric layers in superconducting microwave resonators, flexible high-mobility semiconductor layers on metallic substrates, and dense optical coatings for infrared sensors. In research, germanium thin films are key to advancing strain-engineered photonics, enhancing device performance through controlled defect densities, and developing large-area flexible electronics. Their combination of structural precision, optical quality, and electronic adaptability positions them as vital materials in both cutting-edge industrial production and frontier scientific exploration.
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Material Properties

Atomic Properties
Element Value
Atomic number 32
Crystal structure Diamond
Electronic structure Ar 3d¹⁰ 4s² 4p²
Valences shown 2,4
Atomic weight( amu ) 72.59
Thermal neutron absorption cross-section( Barns ) 2.3
Photo-electric work function( eV ) 4.8
Natural isotope distribution( Mass No./% ) 72/ 27.4
Natural isotope distribution( Mass No./% ) 73/ 7.8
Natural isotope distribution( Mass No./% ) 76/ 7.8
Natural isotope distribution( Mass No./% ) 70/ 20.5
Natural isotope distribution( Mass No./% ) 74/ 36.5
Atomic radius - Goldschmidt( nm ) 0.139
Ionisation potential( No./eV ) 4/ 45.7
Ionisation potential( No./eV ) 3/ 34.22
Ionisation potential( No./eV ) 1/ 7.90
Ionisation potential( No./eV ) 5/ 93.5
Ionisation potential( No./eV ) 2/ 15.93
Mechanical Properties
Element Value
Hardness - Mohs 6.25
Material condition Polycrystalline
Poisson's ratio 0.32
Bulk modulus( GPa ) 73.9
Tensile modulus( GPa ) 79.9
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 46x10⁶22°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) 33.9
Physical Properties
Element Value
Boiling point( C ) 2830
Density( gcm⁻³ ) 5.32@20°C
Thermal Properties
Element Value
Melting point( C ) 937.4
Latent heat of evaporation( J g⁻¹ ) 4516
Latent heat of fusion( J g⁻¹ ) 465
Specific heat( J K⁻¹ kg⁻¹ ) 322@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 60.2@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 5.75@0-100°C
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Available Configurations

Properties common to all products in this list

Composition: Ge Form: Thin Film Material: Germanium CAS Number: 7440-56-4 Commodity: Metals Purity: 99.9999% Support: Aluminium 6µm

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Tolerances

Thin Film
Thickness ±30%

Tolerances

Sizes
Linear dimension ±20%