Germanium Thin Film (Al Backing)

Germanium Thin Film is a precision-engineered semiconductor layer known for its high refractive index, excellent infrared transmission, and compatibility with micro- and nano-fabrication processes. Produced via methods such as chemical vapor deposition, electron beam evaporation, and heteroepitaxial growth, these films exhibit uniform thickness, smooth surfaces, and tunable electronic properties. Industries employ germanium thin films in infrared optics, high-speed electronics, and photovoltaic devices. Specific applications include low-loss dielectric layers in superconducting microwave resonators, flexible high-mobility semiconductor layers on metallic substrates, and dense optical coatings for infrared sensors. In research, germanium thin films are key to advancing strain-engineered photonics, enhancing device performance through controlled defect densities, and developing large-area flexible electronics. Their combination of structural precision, optical quality, and electronic adaptability positions them as vital materials in both cutting-edge industrial production and frontier scientific exploration.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Thin Film

Thickness		±30%

Sizes

Linear dimension		±20%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	32
Crystal structure	Diamond
Electronic structure	Ar 3d¹⁰ 4s² 4p²
Valences shown	2,4
Atomic weight( amu )	72.59
Thermal neutron absorption cross-section( Barns )	2.3
Photo-electric work function( eV )	4.8
Natural isotope distribution( Mass No./% )	72/ 27.4
Natural isotope distribution( Mass No./% )	73/ 7.8
Natural isotope distribution( Mass No./% )	76/ 7.8
Natural isotope distribution( Mass No./% )	70/ 20.5
Natural isotope distribution( Mass No./% )	74/ 36.5
Atomic radius - Goldschmidt( nm )	0.139
Ionisation potential( No./eV )	4/ 45.7
Ionisation potential( No./eV )	3/ 34.22
Ionisation potential( No./eV )	1/ 7.90
Ionisation potential( No./eV )	5/ 93.5
Ionisation potential( No./eV )	2/ 15.93

Mechanical Properties

Element	Value
Hardness - Mohs	6.25
Material condition	Polycrystalline
Poisson's ratio	0.32
Bulk modulus( GPa )	73.9
Tensile modulus( GPa )	79.9

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	46x10⁶@22@22°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	33.9

Physical Properties

Element	Value
Boiling point( C )	2830
Density( gcm⁻³ )	5.32@20°C

Thermal Properties

Element	Value
Melting point( C )	937.4
Latent heat of evaporation( J g⁻¹ )	4516
Latent heat of fusion( J g⁻¹ )	465
Specific heat( J K⁻¹ kg⁻¹ )	322@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	60.2@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	5.75@0-100°C