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Aluminum Thin Film Disk (Mylar® Backing)

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Properties common to all products in this list

Grade: Pure (≥ 99%) Composition: Al Form: Thin Film Material: Aluminum CAS Number: 7429-90-5 Commodity: Metals Purity: 99.999%
Aluminum Thin Film Disk combines the intrinsic properties of aluminum—high electrical conductivity, low density, and excellent reflectivity—with the controlled thickness and surface uniformity characteristic of precision thin films. The material’s microstructure and functional performance depend heavily on deposition parameters, enabling tailored electrical, optical, and mechanical behavior. Aluminum Thin Film Disks are extensively used in microelectronics, optics, and sensor technology. Primary applications include conductive interconnects in semiconductor devices, reflective and protective layers in optical systems, and electrodes in advanced sensors. In MEMS/NEMS fabrication, these films provide reliable performance under mechanical and thermal stress, while in telecommunications hardware they ensure high signal integrity and stability. Their adaptability makes them indispensable in R&D for next-generation electronics, high-efficiency photovoltaics, and precision optical coatings. By combining scalability with highly tunable physical properties, Aluminum Thin Film Disks remain a cornerstone material for both industrial manufacturing and experimental innovation.
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Material Properties

Atomic Properties
Element Value
Atomic number 13
Crystal structure Face centred cubic
Electronic structure Ne 3s² 3p¹
Valences shown 3
Atomic weight( amu ) 26.98154
Thermal neutron absorption cross-section( Barns ) 0.232
Photo-electric work function( eV ) 4.2
Atomic radius - Goldschmidt( nm ) 0.143
Ionisation potential( No./eV ) 4/ 120
Ionisation potential( No./eV ) 5/ 154
Ionisation potential( No./eV ) 6/ 190
Ionisation potential( No./eV ) 1/ 5.99
Ionisation potential( No./eV ) 3/ 28.4
Ionisation potential( No./eV ) 2/ 18.8
Mechanical Properties
Element Value
Material condition Soft
Material condition Hard
Poisson's ratio 0.345
Poisson's ratio 0.345
Bulk modulus( GPa ) 75.2
Bulk modulus( GPa ) 75.2
Tensile modulus( GPa ) 70.6
Tensile modulus( GPa ) 70.6
Hardness - Vickers( kgf mm⁻² ) 21
Hardness - Vickers( kgf mm⁻² ) 35-48
Tensile strength( MPa ) 130-195
Tensile strength( MPa ) 50-90
Yield strength( MPa ) 110-170
Yield strength( MPa ) 10‑35
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 2.67@20°C
Superconductivity critical temperature( K ) 1.175
Temperature coefficient( K⁻¹ ) 0.0045@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) 0.42
Physical Properties
Element Value
Boiling point( C ) 2467
Density( gcm⁻³ ) 2.7@20°C
Thermal Properties
Element Value
Melting point( C ) 660.4
Latent heat of evaporation( J g⁻¹ ) 10800
Latent heat of fusion( J g⁻¹ ) 388
Specific heat( J K⁻¹ kg⁻¹ ) 900@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 237@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 23.5@0-100°C
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Available Configurations

Properties common to all products in this list

Grade: Pure (≥ 99%) Composition: Al Form: Thin Film Material: Aluminum CAS Number: 7429-90-5 Commodity: Metals Purity: 99.999%

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Tolerances

Thin Film
Thickness ±30%

Tolerances

Disk
Diameter ±20%