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Tungsten Disk
Available Configurations
Properties common to all products in this list
| Thickness | Diameter | Surface Finish |
|---|---|---|
| 0.025 mm (foil) to 3 mm (sheet) | 2 mm to 100 mm | Polished on one side |
Need custom configurations? Please contact us.
Key Features
Tungsten Disk at 99.95% purity is a precision-cut circular component combining the highest melting point of any metal — 3,410 °C — with a density of 19.3 g/cm³, a tensile modulus of 411 GPa, and Vickers hardness of 360–500 kgf/mm², in a flat geometry optimized for direct integration into high-temperature, high-energy, and radiation-shielding assemblies:
Highest Melting Point of Any Metal (3,410 °C) & Exceptional Dimensional Stability
A melting point of 3,410 °C, extremely low vapor pressure at elevated temperatures, and a coefficient of thermal expansion of just 4.5 × 10⁻⁶ K⁻¹ give Tungsten Disk exceptional dimensional stability under sustained thermal load — making it reliable in electron beam evaporation targets, high-temperature brazing fixtures, and semiconductor process components where dimensional change at elevated temperatures is not acceptable.
High Atomic Number (Z = 74) & High Density for Radiation Attenuation
With an atomic number of 74 and a density of 19.3 g/cm³, Tungsten Disk is highly effective at attenuating X-ray and gamma radiation — properties that drive its use as an X-ray target backing material, radiation shielding component, and collimator element in medical imaging and industrial radiography systems where compact, high-attenuation shielding is required.
Thermal Conductivity of 173 W/m·K for Precision Heat Management
Thermal conductivity of 173 W/m·K supports Tungsten Disk's use as a heat spreader in high-power electronics and laser systems, where rapid, localized heat removal from a compact flat surface is required — combined with high density and mechanical rigidity that prevent deformation under the thermal stress of high-power cycling.
High Tensile Modulus (411 GPa) & Vickers Hardness 360–500 kgf/mm²
The highest tensile modulus and among the highest hardness values of any metallic disk form give Tungsten Disk exceptional resistance to mechanical deformation — supporting its use as calibration mass standards in precision metrology, diffusion bonding substrates requiring dimensional accuracy under bonding pressure, and precision components in semiconductor processing equipment.
Standardized Research Substrate for Extreme-Condition Studies
Tungsten Disk serves as a standardized test specimen for neutron absorption studies, refractory metal surface science, thin-film nucleation experiments, and thermomechanical characterization at temperatures beyond the capability of any other elemental metal disk — providing a reproducible, specification-controlled circular platform for high-temperature research programs.
Industrial Applications
Tungsten Disk is used across medical imaging, power electronics, semiconductor processing, precision metrology, and research sectors where high-temperature capability, radiation attenuation, and mechanical rigidity must be combined in a precision circular form:
- ✦ X-Ray Target Backing & Radiation Shielding Components
- Used as X-ray target backing material and radiation shielding components in medical imaging and industrial radiography systems, where the combination of atomic number 74, density of 19.3 g/cm³, and high-temperature stability provides maximum X-ray and gamma-ray attenuation in a compact disk geometry that also withstands the thermal cycling of X-ray generation.
- ✦ Collimator Elements in Medical & Industrial Radiography
- Machined into collimator elements for medical CT, PET, and industrial radiography systems, where high density and hardness of 360–500 kgf/mm² ensure dimensional stability of the collimator aperture geometry under the radiation and thermal loading of extended imaging system operation.
- ✦ Electron Beam Evaporation Targets & Semiconductor Process Components
- Used as electron beam evaporation targets and semiconductor process components, where a melting point of 3,410 °C, extremely low vapor pressure, and dimensional stability under thermal load ensure that the disk maintains its geometry and purity specification through the high-temperature processing conditions of thin-film deposition and semiconductor manufacturing.
- ✦ Heat Spreaders in High-Power Electronics & Laser Systems
- Applied as heat spreader disks in high-power electronics and laser systems, where thermal conductivity of 173 W/m·K combined with the mechanical rigidity of a 411 GPa tensile modulus enables efficient localized heat extraction without the deformation under thermal stress that limits softer high-conductivity materials in compact high-power assemblies.
- ✦ Calibration Mass Standards, Research Specimens & Diffusion Bonding Substrates
- Used as calibration mass standards in precision metrology, standardized test specimens for neutron absorption and high-temperature surface science, and substrates for high-temperature brazing and diffusion bonding — providing a reproducible, specification-controlled circular tungsten component for experimental and precision engineering programs at conditions beyond the capability of any other elemental metal disk.
Material Properties
| Element | Value |
|---|---|
| Atomic number | 74 |
| Crystal structure | Body centred cubic |
| Electronic structure | Xe 4f¹⁴ 5d⁴ 6s² |
| Valences shown | 2,3,4,5,6 |
| Atomic weight( amu ) | 183.85 |
| Thermal neutron absorption cross-section( Barns ) | 18.5 |
| Photo-electric work function( eV ) | 4.55 |
| Natural isotope distribution( Mass No./% ) | 183/ 14.3 |
| Natural isotope distribution( Mass No./% ) | 182/ 26.3 |
| Natural isotope distribution( Mass No./% ) | 186/ 28.6 |
| Natural isotope distribution( Mass No./% ) | 180/ 0.1 |
| Natural isotope distribution( Mass No./% ) | 184/ 30.7 |
| Atomic radius - Goldschmidt( nm ) | 0.141 |
| Ionisation potential( No./eV ) | 1/ 7.98 |
| Ionisation potential( No./eV ) | 2/ 17.7 |
| Element | Value |
|---|---|
| Material condition | Soft |
| Material condition | Hard |
| Poisson's ratio | 0.28 |
| Poisson's ratio | 0.28 |
| Bulk modulus( GPa ) | 311 |
| Bulk modulus( GPa ) | 311 |
| Tensile modulus( GPa ) | 411 |
| Tensile modulus( GPa ) | 411 |
| Hardness - Vickers( kgf mm⁻² ) | 360 |
| Hardness - Vickers( kgf mm⁻² ) | 500 |
| Tensile strength( MPa ) | 550-620 |
| Tensile strength( MPa ) | 1920 |
| Yield strength( MPa ) | 550 |
| Element | Value |
|---|---|
| Electrical resistivity( µOhmcm ) | 5.4@20°C |
| Superconductivity critical temperature( K ) | 0.0154 |
| Temperature coefficient( K⁻¹ ) | 0.0048@0-100°C |
| Thermal emf against Pt (cold 0C - hot 100C)( mV ) | 1.12 |
| Element | Value |
|---|---|
| Boiling point( C ) | 5660 |
| Density( gcm⁻³ ) | 19.3@20°C |
| Element | Value |
|---|---|
| Melting point( C ) | 3410 |
| Latent heat of evaporation( J g⁻¹ ) | 4009 |
| Latent heat of fusion( J g⁻¹ ) | 192 |
| Specific heat( J K⁻¹ kg⁻¹ ) | 133@25°C |
| Thermal conductivity( W m⁻¹ K⁻¹ ) | 173@0-100°C |
| Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) | 4.5@0-100°C |
Tolerances
| Thickness | <0.01mm | ±25% |
|---|---|---|
| Thickness | 0.01mm - 0.05mm | ±15% |
| Thickness | >0.05mm | ±10% |
| Diameter | ±0.5mm |