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Formula: Ta₂O₅
Form: Sputtering Target
Material: Tantalum Pentoxide
CAS Number: 1314-61-0
Commodity: Compounds
Thickness: 3mm

Tantalum Pentoxide Sputtering Target

Tantalum Pentoxide Sputtering Target offers high dielectric constant, thermal stability, and chemical inertness in a dense form optimized for thin-film deposition. This target is widely used in physical vapor deposition (PVD) systems to create uniform coatings for high-performance capacitors, optical interference filters, and advanced gate dielectrics in microelectronics. Its stability at elevated temperatures and resistance to reactive gases make it ideal for deposition in oxygen-rich environments. Industries including semiconductor manufacturing, photonics, and advanced sensor technology rely on tantalum pentoxide targets for precise, contamination-free coatings. In research, they are used in developing next-generation memory devices, transparent conductive films, and optical coatings for high-power lasers. The sputtering target format ensures consistent deposition rates and film uniformity, enabling reliable production of components that demand exacting electrical and optical properties.
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