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Tantalum Pentoxide Sputtering Target

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Composition: Ta₂O₅ Form: Sputtering Target Material: Tantalum Pentoxide CAS Number: 1314-61-0 Commodity: Compounds Thickness: 3mm
Tantalum Pentoxide Sputtering Target offers high dielectric constant, thermal stability, and chemical inertness in a dense form optimized for thin-film deposition. This target is widely used in physical vapor deposition (PVD) systems to create uniform coatings for high-performance capacitors, optical interference filters, and advanced gate dielectrics in microelectronics. Its stability at elevated temperatures and resistance to reactive gases make it ideal for deposition in oxygen-rich environments. Industries including semiconductor manufacturing, photonics, and advanced sensor technology rely on tantalum pentoxide targets for precise, contamination-free coatings. In research, they are used in developing next-generation memory devices, transparent conductive films, and optical coatings for high-power lasers. The sputtering target format ensures consistent deposition rates and film uniformity, enabling reliable production of components that demand exacting electrical and optical properties.
Starting at $1,160.00 each
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Available Configurations

Properties common to all products in this list

Composition: Ta₂O₅ Form: Sputtering Target Material: Tantalum Pentoxide CAS Number: 1314-61-0 Commodity: Compounds Thickness: 3mm

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Tolerances

Disk
Thickness ±20%
Diameter ±0.5mm