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Molybdenum Disk
Available Configurations
Properties common to all products in this list
| Thickness | Diameter | Temper ⓘ | Surface Finish |
|---|---|---|---|
| 0.001mm (foil) to 10mm (plate) | 4mm to 50.8mm | Annealed Stress Relieved As Rolled |
Polished on both sides |
Need custom configurations? Please contact us.
Key Features
Molybdenum Disk at 99.9% purity is a precision-cut circular component combining a melting point of 2,617 °C, thermal conductivity of 138 W/m·K, and a coefficient of thermal expansion of 5.1 × 10⁻⁶ K⁻¹ with a density of 10.22 g/cm³ and tensile strength of 485–690 MPa in a flat geometry that integrates directly into semiconductor processing equipment, optical systems, and high-temperature assemblies:
Low CTE (5.1 × 10⁻⁶ K⁻¹) Matched to Silicon & Technical Ceramics
A coefficient of thermal expansion of 5.1 × 10⁻⁶ K⁻¹ — close to that of silicon and many technical ceramics — makes Molybdenum Disk a reliable substrate and backing material in applications where thermal cycling would cause delamination or cracking in CTE-mismatched assemblies, driving its use as a heat-spreader backing in high-power laser diodes, LED modules, and microwave power devices.
Thermal Conductivity of 138 W/m·K for Heat Spreader Applications
Thermal conductivity of 138 W/m·K supports efficient lateral heat spreading in high-power electronics and laser diode packages, while the high melting point of 2,617 °C ensures structural integrity at the elevated temperatures encountered in high-power device operation — delivering both the thermal performance and the mechanical robustness required in compact power electronics assemblies.
High Tensile Modulus (324.8 GPa) & Vickers Hardness 200–250 kgf/mm²
A tensile modulus of 324.8 GPa and Vickers hardness of 200–250 kgf/mm² in the as-rolled condition give Molybdenum Disk good dimensional stability under mechanical and thermal load — supporting its use as an X-ray tube anode backing, vacuum system component, and precision substrate where dimensional accuracy must be maintained under combined mechanical and thermal stress.
Low Secondary Electron Yield & Good Electrical Conductivity for Electron Microscopy
Molybdenum Disk's low secondary electron yield and good electrical conductivity make it a widely used specimen stub and substrate in scanning electron microscopy and surface analysis, where low background signal, conductivity suppressing charge build-up, and chemical stability under electron beam irradiation are all required simultaneously.
Standardized Research Substrate for High-Temperature Characterization
Molybdenum Disk serves as a standardized test specimen for high-temperature mechanical characterization, thin-film nucleation studies, and refractory metal surface science experiments — providing a reproducible, specification-controlled circular platform at temperatures and conditions beyond the capability of standard metallic disk substrates.
Industrial Applications
Molybdenum Disk is used across power electronics, semiconductor processing, X-ray technology, electron microscopy, and research sectors where CTE matching, thermal conductivity, and high-temperature stability must be combined in a precision circular form:
- ✦ Heat-Spreader Backing in High-Power Laser Diodes, LED Modules & Microwave Devices
- Used as heat-spreader backing in high-power laser diode packages, LED modules, and microwave power devices, where a CTE of 5.1 × 10⁻⁶ K⁻¹ matched to semiconductor and ceramic substrates eliminates the delamination and cracking caused by CTE mismatch in thermally cycled assemblies, while thermal conductivity of 138 W/m·K ensures efficient heat removal from the active device.
- ✦ X-Ray Tube Anode Backings & Vacuum System Components
- Applied as X-ray tube anode backings and precision vacuum system components, where a melting point of 2,617 °C, low vapor pressure, and dimensional stability under the combined thermal and mechanical loading of X-ray generation ensure long service life and consistent anode geometry across the operating lifetime of the X-ray system.
- ✦ Thin-Film Deposition Substrates
- Used as thin-film deposition substrates in semiconductor processing and surface science research, where 99.9% purity, a well-defined surface, and high-temperature stability ensure that the molybdenum disk does not contaminate the deposition environment or compromise the surface integrity and adhesion of deposited films at elevated process temperatures.
- ✦ Electron Microscopy Specimen Stubs & Surface Analysis Substrates
- Widely used as specimen stubs and substrates in scanning electron microscopy and surface analysis, where low secondary electron yield minimizes background signal interference, good electrical conductivity prevents charge build-up under the electron beam, and chemical stability under irradiation ensures a reliable, low-artifact analysis platform.
- ✦ High-Temperature Characterization & Refractory Metal Research
- Serves as a standardized test specimen for high-temperature mechanical characterization, thin-film nucleation studies, and refractory metal surface science experiments, providing a reproducible, specification-controlled molybdenum disk for research programs at temperatures and conditions where standard metallic substrates would be insufficient.
Material Properties
| Element | Value |
|---|---|
| Atomic number | 42 |
| Crystal structure | Body centred cubic |
| Electronic structure | Kr 4d⁵ 5s¹ |
| Valences shown | 2, 3, 4, 5, 6 |
| Atomic weight( amu ) | 95.94 |
| Thermal neutron absorption cross-section( Barns ) | 2.65 |
| Photo-electric work function( eV ) | 4.2 |
| Natural isotope distribution( Mass No./% ) | 95/ 15.9 |
| Natural isotope distribution( Mass No./% ) | 96/ 16.7 |
| Natural isotope distribution( Mass No./% ) | 98/ 24.1 |
| Natural isotope distribution( Mass No./% ) | 97/ 9.6 |
| Natural isotope distribution( Mass No./% ) | 92/ 14.8 |
| Natural isotope distribution( Mass No./% ) | 94/ 9.3 |
| Natural isotope distribution( Mass No./% ) | 100/ 9.6 |
| Atomic radius - Goldschmidt( nm ) | 0.14 |
| Ionisation potential( No./eV ) | 2/ 16.15 |
| Ionisation potential( No./eV ) | 5/ 61.2 |
| Ionisation potential( No./eV ) | 68 |
| Ionisation potential( No./eV ) | 1/ 7.10 |
| Ionisation potential( No./eV ) | 3/ 27.2 |
| Ionisation potential( No./eV ) | 4/ 46.4 |
| Element | Value |
|---|---|
| Material condition | Hard |
| Material condition | Soft |
| Poisson's ratio | 0.293 |
| Poisson's ratio | 0.293 |
| Bulk modulus( GPa ) | 261.2 |
| Bulk modulus( GPa ) | 261.2 |
| Tensile modulus( GPa ) | 324.8 |
| Tensile modulus( GPa ) | 324.8 |
| Hardness - Vickers( kgf mm⁻² ) | 250 |
| Hardness - Vickers( kgf mm⁻² ) | 200 |
| Tensile strength( MPa ) | 485-550 |
| Tensile strength( MPa ) | 620-690 |
| Yield strength( MPa ) | 550 |
| Yield strength( MPa ) | 415-450 |
| Element | Value |
|---|---|
| Electrical resistivity( µOhmcm ) | 5.7@20°C |
| Superconductivity critical temperature( K ) | 0.915 |
| Temperature coefficient( K⁻¹ ) | 0.00435@0-100°C |
| Thermal emf against Pt (cold 0C - hot 100C)( mV ) | 1.45 |
| Element | Value |
|---|---|
| Boiling point( C ) | 4612 |
| Density( gcm⁻³ ) | 10.22@20°C |
| Element | Value |
|---|---|
| Melting point( C ) | 2617 |
| Latent heat of evaporation( J g⁻¹ ) | 6153 |
| Latent heat of fusion( J g⁻¹ ) | 290 |
| Specific heat( J K⁻¹ kg⁻¹ ) | 251@25°C |
| Thermal conductivity( W m⁻¹ K⁻¹ ) | 138@0-100°C |
| Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) | 5.1@0-100°C |
Tolerances
| Thickness | <0.01mm | ±25% |
|---|---|---|
| Thickness | 0.01mm - 0.05mm | ±15% |
| Thickness | >0.05mm | ±10% |
| Diameter | ±0.5mm |