Tellurium

Tellurium — Material Page
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Tellurium (Te, atomic number 52) is a Group 16 chalcogen metalloid with a trigonal crystal structure analogous to gray selenium, a melting point of 449.5 °C, and a narrow bandgap of ~0.33 eV — making it an intrinsic semiconductor with the highest Seebeck coefficient (~500 µV/K) of any elemental solid and the best thermoelectric figure of merit (zT ~1 near room temperature) among elemental materials. Tellurium is one of the rarest stable elements in Earth's crust (~1 ppb, comparable to platinum-group metals), occurring primarily in gold and copper telluride minerals (calaverite AuTe₂, petzite Ag₃AuTe₂, sylvanite AgAuTe₄) and recovered almost entirely as a byproduct of copper anode slime processing in electrolytic copper refining — global production is only ~500 tonnes/year, heavily constrained by copper output. Te has eight naturally occurring isotopes spanning mass 120–130, six of which are suspected or confirmed double beta decay candidates (Stable*); the most abundant, ¹³⁰Te (34.1%), is the target of the CUORE experiment searching for neutrinoless double beta decay. Tellurium compounds produce a distinctive garlic odor (dimethyltelluride) at trace exposures; even nanogram-level skin contact causes persistent breath odor lasting weeks.

The dominant use of tellurium is in cadmium telluride (CdTe) thin-film solar cells, which represent the second-largest photovoltaic technology by installed capacity and the lowest-cost solar module at scale — consuming ~40% of global Te production. CdTe solar cells (First Solar Series 6/7 modules, ~22% record cell efficiency, ~19% commercial) use a ~3–4 µm CdTe absorber layer deposited by close-space sublimation (CSS) at ~500 °C; the 1.45 eV direct bandgap of CdTe is nearly ideal for single-junction solar energy conversion under AM1.5. Te supply constraints are a recognized bottleneck for CdTe PV scaling — at ~40–100 tonnes Te per GW of CdTe modules, the entire ~500 tonnes/year Te production supports only 5–12 GW/year of new CdTe capacity. Bismuth telluride (Bi₂Te₃) and its alloys (Bi₂Te₃–Sb₂Te₃ for p-type, Bi₂Te₃–Bi₂Se₃ for n-type) are the dominant commercial thermoelectric materials for solid-state cooling (Peltier coolers in CPU thermal management, laser diode temperature stabilization, portable cooling devices) and waste heat recovery at near-ambient temperatures.

Beyond photovoltaics and thermoelectrics, tellurium is essential in phase-change optical storage media, free-machining steel and copper alloys, and as the chalcogenide component of the topological insulator Bi₂Te₃ — a model system for topologically protected surface states and proximity-effect topological superconductivity research. Phase-change materials based on GeTe and Ge-Sb-Te (GST) alloys exploit the rapid, reversible amorphous↔crystalline phase transition triggered by laser pulses to store data in rewritable optical discs (CD-RW, DVD-RW, Blu-ray) and, more recently, in phase-change memory (PCM/PCRAM) non-volatile semiconductor memory chips (Intel Optane, now discontinued but historically significant). In metallurgy, Te additions of 0.02–0.1 wt% to free-machining copper (ASTM C14500, 0.4–0.7% Te) and steel dramatically improve machinability and chip breakage without the toxicity concerns of Pb additives; this application consumes ~25% of global Te. Tellurium nanowires and nanostructures have emerged as a research platform for piezoelectricity, chirality-driven photoconductance, and quantum confinement effects.

General Properties

PropertyValueNotes
Atomic Number52Group 16 (chalcogens), Period 5; 4d¹⁰5s²5p⁴; oxidation states –2 (telluride), +4 (TeO₂), +6 (TeO₃, telluric acid). Te is a narrow-bandgap semiconductor (Eg ~0.33 eV) and the heaviest chalcogen with significant metallic character — conductivity increases with temperature, confirming semiconductor behavior.
Atomic Mass127.60 uEight naturally occurring isotopes (¹²⁰Te–¹³⁰Te); unusually, Te (Z=52) has a higher atomic mass than iodine (Z=53, 126.90 u) — one of four element pairs where atomic number and atomic mass order disagree, a historical puzzle resolved by the discovery of isotopes. Most isotopes are Stable* (double beta decay candidates).
Density (20 °C)6.24 g/cm³Moderate density for a metalloid; the trigonal chain structure (analogous to gray Se) gives anisotropic mechanical and transport properties. Amorphous Te has slightly lower density (~6.0 g/cm³) and is used in phase-change memory applications.
Melting Point449.5 °C (722.7 K)Moderate melting point enabling Te vapor deposition and melt casting at accessible temperatures. Te evaporates readily from resistively heated sources at 500–700 °C for CdTe CSS deposition and Bi₂Te₃ co-evaporation.
Boiling Point988 °C (1,261 K)Accessible boiling point makes Te a practical vapor-phase source for CdTe close-space sublimation (CSS) at ~500 °C substrate temperature and for molecular beam epitaxy of telluride films. Te vapor is predominantly Te₂ above ~600 °C.
Thermal Conductivity2.9 W/m·K (along c-axis); ~1.5 W/m·K (perpendicular)Very low and strongly anisotropic — among the lowest of any crystalline solid. The low thermal conductivity (high phonon scattering from the chain structure and van der Waals inter-chain forces) is key to the high thermoelectric zT in Te-based materials including Bi₂Te₃.
Electrical Resistivity~420 nΩ·m (along c-axis, 20 °C)Source lists "42 µΩ·cm" — converted to SI: 420 nΩ·m. Strongly anisotropic and temperature-dependent (semiconductor behavior — resistivity decreases with temperature). Intrinsic carrier concentration ~10¹³ cm⁻³ at 300 K; carrier type and concentration very sensitive to impurity doping.
Crystal StructureTrigonal (hexagonal), space group P3₁21; a = 4.457 Å, c = 5.927 ÅHelical covalently bonded Te chains (analogous to gray Se) packed in a hexagonal lattice with weak van der Waals inter-chain forces. The chiral chain structure gives Te strong optical activity and piezoelectricity. The c/a ratio (1.330) differs from Se (1.138), reflecting the larger Te atom and weaker inter-chain interaction.

Mechanical Properties

PropertyValueNotes
Young's Modulus~50 GPa (approx., along c-axis)Low and anisotropic — stiff along the chain axis (c-axis) but soft perpendicular to it. Te is extremely brittle, fracturing without plastic deformation along inter-chain cleavage planes; handling of ingots and sputtering targets requires care to avoid breakage.
HardnessMohs ~2.25Soft and brittle — cleaves easily along {10-10} prism planes parallel to the Te chain axis. Diamond or carbide tooling required for any machining of Te-containing targets or crystals.

Chemical Properties

PropertyValue / BehaviorNotes
Oxidation States–2, +4 (most common), +6; +2 in some compoundsTe²⁻ (telluride) is the chalcogenide anion in metal tellurides (CdTe, Bi₂Te₃, PbTe, GeTe); TeO₂ is the dominant oxide (forms on surface in air above ~100 °C); Te⁶⁺ in orthotelluric acid Te(OH)₆ (a weak acid, unlike the strong H₂SO₄ analogue). The Te⁴⁺/Te⁶⁺ couple is relevant in the geochemical Te redox cycle.
Corrosion / ReactivityStable in dry air at RT; oxidizes to TeO₂ above ~100 °C; dissolves in HNO₃ and aqua regia; attacked by KOH/NaOHTe is more resistant to oxidation than Se but less so than S. Dissolves in concentrated H₂SO₄ (forming Te⁴⁺ solutions) and in HNO₃; resistant to HCl at room temperature. Reacts with halogens (F₂, Cl₂, Br₂) to form tetrahalides.
ToxicologyModerately toxic; OSHA PEL 0.1 mg/m³; characteristic garlic breath at sub-µg exposureDimethyltelluride (volatile metabolite) causes persistent garlic-like breath for weeks after even trace Te exposure — a sensitive inadvertent exposure indicator. Te and its compounds are toxic at elevated doses (nausea, CNS effects); less acutely toxic than Se but requires careful handling with local exhaust ventilation.
IdentifierValue
SymbolTe
Atomic Number52
CAS Number13494-80-9
UN NumberUN3284 (tellurium compound, solid)
EINECS Number236-813-4
IsotopeTypeNotes
¹²⁰Te Stable 0.09% natural abundance; I = 0; least abundant naturally occurring Te isotope. p-process nuclide produced in the p-process of stellar nucleosynthesis. Used as IDMS spike for Te isotope ratio measurements.
¹²²Te Stable* 2.55% natural abundance; I = 0; Stable* — theoretically a 2νββ candidate to ¹²²Sn (Q = 0.85 MeV) but half-life unmeasured (>10²⁰ yr). s-process nuclide; used as reference isotope in Te isotope ratio geochemistry.
¹²³Te Stable* 0.89% natural abundance; I = 1/2, NMR-active — the only NMR-active Te isotope (¹²⁵Te also NMR-active, see below). Stable* — electron capture decay to ¹²³Sb has been measured: t½ = 9.2 × 10¹⁶ yr. ¹²³Te NMR characterizes Te coordination and bonding in telluride glasses (Ge-Te, As-Te), organotelluriums, and phase-change materials.
¹²⁴Te Stable* 4.74% natural abundance; I = 0; Stable* — 2νββ to ¹²⁴Sn is energetically allowed (Q = 1.45 MeV) but unmeasured. Enriched ¹²⁴Te used for production of ¹²⁴I (t½ = 4.18 days, PET imaging isotope) via ¹²⁴Te(p,n)¹²⁴I reaction at proton cyclotrons.
¹²⁵Te Stable 7.07% natural abundance; I = 1/2, NMR-active — the most-used Te NMR isotope due to its higher natural abundance vs. ¹²³Te; ¹²⁵Te NMR chemical shift range >3,000 ppm, sensitive to Te oxidation state and bonding. Used to characterize CdTe, PbTe, and GeTe semiconductors and phase-change alloys by MAS-NMR.
¹²⁶Te Stable* 18.84% natural abundance; I = 0; Stable* — 2νββ to ¹²⁶Sn (Q = 1.07 MeV) is energetically allowed but unmeasured. s-process nuclide; reference isotope for δ¹³⁰Te/¹²⁶Te MC-ICP-MS measurements tracing Te in geological and environmental samples.
¹²⁸Te Stable* 31.74% natural abundance — second most abundant; I = 0; Stable* — two-neutrino double beta decay to ¹²⁸Xe measured: t½(2νββ) = 2.2 × 10²⁴ yr, one of the longest measured half-lives of any process. The Q-value (0.87 MeV) is low, making neutrinoless 0νββ search less competitive than ¹³⁰Te.
¹³⁰Te Stable* 34.08% natural abundance — most abundant; I = 0; Stable* — 2νββ to ¹³⁰Xe measured: t½(2νββ) = 7.9 × 10²⁰ yr. The CUORE experiment (Cryogenic Underground Observatory for Rare Events, Gran Sasso) uses 741 kg of TeO₂ crystals cooled to 10 mK as bolometric detectors to search for neutrinoless 0νββ (Q = 2.528 MeV), with a current half-life sensitivity >2.2 × 10²⁵ yr. The high natural abundance of ¹³⁰Te eliminates the need for costly isotopic enrichment.

Scientific & Research Applications

Use CaseForm Typically UsedDescription
CdTe Photovoltaic ResearchTe pellets/shots (99.999%), CdTe compound targetsCdTe solar cells (First Solar) use a ~3–4 µm CdTe absorber deposited by close-space sublimation (CSS) at ~500 °C; record cell efficiency 22.1%. Research targets rear contact passivation, CdSeTe graded bandgap front layers, and module-scale efficiency improvement. Te supply security (~40–100 t Te/GW) is a key constraint on CdTe PV scaling.
Bi₂Te₃ Thermoelectric ResearchTe shots (99.999%), Bi₂Te₃ compound, p/n-type ingotsBi₂Te₃ and its solid solutions (Bi₂₋ₓSbₓTe₃ p-type, Bi₂Te₃₋ₓSeₓ n-type) have peak zT ~1.0–1.4 near room temperature — the benchmark for commercial Peltier coolers and thermoelectric generators. Research focuses on nanostructured Bi₂Te₃ (suppressed lattice thermal conductivity, zT >1.5) and thin-film modules for microelectronics thermal management.
Topological Insulator ResearchBi₂Te₃ single crystals, MBE films (Te 99.999%)Bi₂Te₃ is a prototypical topological insulator with a ~0.15 eV bulk bandgap and a single Dirac cone surface state measured by ARPES. Research includes MBE growth of Bi₂Te₃/Bi₂Se₃ heterostructures, proximity coupling to superconductors (NbSe₂, Al) for Majorana bound state studies, and magnetically doped (Cr, V) Bi₂Te₃ for the quantum anomalous Hall effect.
¹²⁵Te NMR SpectroscopyNatural-abundance or enriched ¹²⁵Te compounds¹²⁵Te NMR (I = 1/2, >3,000 ppm shift range) characterizes Te coordination in phase-change materials (Ge-Sb-Te alloys for PCM memory), chalcogenide glasses (Ge-Te, As-Se-Te for IR fibers), telluride semiconductors (CdTe, PbTe, GeTe), and organotelluriums. Sensitive to local Te bonding environment and structural ordering.
Phase-Change Memory MaterialsGe-Sb-Te (GST) sputtering targets (99.999%)Ge₂Sb₂Te₅ (GST-225) undergoes a fast, reversible amorphous↔crystalline transition (crystallization ~150 °C, melt-quench amorphization) exploited in optical discs (CD-RW, DVD-RW, Blu-ray) and PCRAM (phase-change RAM) chips. Intel Optane used GST-based PCM for storage-class memory; research continues on multilevel cell PCM for AI inference accelerators.

Industrial & Commercial Applications

SectorForm / Grade UsedDescription
CdTe Solar ModulesTe shots/pellets (99.999%) as CdTe CSS source materialFirst Solar's CdTe modules are the lowest-cost solar technology at scale (~$0.20–0.25/W manufacturing cost). Each GW of production requires ~40–100 tonnes Te; global CdTe PV capacity of ~30 GW cumulative (2024) has consumed ~1,200–3,000 tonnes Te. Te supply from copper refining is the primary capacity constraint for CdTe PV expansion.
Thermoelectric Coolers & GeneratorsBi₂Te₃ ingots (Te 99.999%), zone-refined p/n-type materialCommercial Peltier modules (hundreds of millions produced annually) use p-type Bi₀.₅Sb₁.₅Te₃ and n-type Bi₂Te₂.₇Se₀.₃ legs; applications include laser diode temperature stabilization, CPU spot cooling, portable refrigerators, and medical cold plates. Thermoelectric generators recover waste heat in automotive exhaust, industrial processes, and remote power systems.
Free-Machining Copper & SteelTe granules (99.5–99.95%), 0.02–0.7 wt% additionsTe additions to copper (ASTM C14500: 0.4–0.7% Te) improve machinability and chip breakage while retaining 90%+ of the electrical conductivity of pure copper — widely used for electrical connectors, switchgear, and precision-turned components. In steel, Te additions improve machinability comparably to sulfur with less anisotropy.
Optical Storage MediaGe-Sb-Te sputtering targets (99.999%)Phase-change optical media (CD-RW, DVD-RW, Blu-ray RE) use thin GST-225 or AgInSbTe alloy films written by laser pulses. Though declining with solid-state storage adoption, the installed base of optical drives remains large and continues to consume Te-based target materials for disc manufacturing.
Rubber VulcanizationTe diethyldithiocarbamate, Te powder (99.5%)Tellurium-based vulcanization accelerators (tellurium diethyldithiocarbamate, TDEC) produce rubbers with superior heat resistance, aging stability, and resilience compared to sulfur-only vulcanization — used in conveyor belts, seals, and hoses operating at elevated temperatures.
PurityMain Use
99.5% (2N5)Commercial grade for metallurgical additions (free-machining copper ASTM C14500 and steel), rubber vulcanization accelerator synthesis, and large-volume chemical applications where <5,000 ppm total metallic impurities are acceptable
99.95% (3N5)High-purity grade for Bi₂Te₃ thermoelectric module production (Peltier coolers, thermoelectric generators), optical storage target alloy preparation (GST), and electronic applications requiring <500 ppm metallic impurities
99.999% (5N)Ultra-high purity for CdTe photovoltaic CSS source material, Bi₂Te₃ topological insulator crystal growth and MBE, ¹²⁵Te NMR reference samples, phase-change memory target alloys, and semiconductor research requiring <10 ppm total metallic impurities
Synonym / Alternative NameContext
TeChemical symbol; from Latin Tellus (goddess of Earth) — named by Martin Heinrich Klaproth in 1798 who characterized it as a new element; the name was chosen as a terrestrial counterpart to selenium (Selene, Moon), reflecting Te's association with gold-ore minerals first found in Transylvanian mines.
Tellurium metalCommercial designation for elemental Te in ingot, pellet, shot, or powder form; technically a metalloid — the "metal" designation is a trade convention distinguishing elemental Te from tellurium compounds (TeO₂, CdTe, Bi₂Te₃, etc.) in supply chain documentation.
Element 52Used in nuclear physics, isotope geochemistry (Te isotope anomalies in meteorites are tracers of s-process nucleosynthesis), and discussions of the Z=52 vs. Z=53 atomic mass inversion (Te heavier than I despite lower atomic number).
TellurGerman language name (Tellur); used throughout German scientific literature, standards, and industrial documentation; the standard name in German, Dutch, and several Scandinavian languages.
TellureFrench language name (Tellure); used in French scientific literature, EU regulatory documentation, and materials science publications on CdTe photovoltaics and Bi₂Te₃ thermoelectrics.