Silicon

Silicon — Material Page
View Products ↓

Silicon (Si, atomic number 14) is a Group 14 metalloid with a diamond-cubic crystal structure, a melting point of 1,414 °C, and an indirect bandgap of 1.12 eV — the physical properties that make it the foundation of the global semiconductor industry and the most economically important non-metallic element. Silicon is the second most abundant element in Earth's crust (~27.7 wt%), occurring as silica (SiO₂) and silicate minerals; it is never found free in nature. Elemental Si is produced by carbothermic reduction of quartz in electric arc furnaces (~8 million tonnes/year metallurgical grade), then refined to electronic grade by the Siemens process (chemical vapor deposition of trichlorosilane) or Czochralski crystal pulling to produce the ultra-high-purity single-crystal boules from which semiconductor wafers are cut. Silicon forms a self-passivating native SiO₂ oxide (2–4 nm thick at room temperature, thermally grown to precise thicknesses in device fabrication) that provides excellent chemical stability and is central to CMOS device physics as the gate dielectric in all pre-high-κ transistor generations.

Silicon's 1.12 eV indirect bandgap, mature processing technology, and earth abundance make it the dominant material for both microelectronics and photovoltaics — silicon CMOS accounts for essentially all logic, memory, and mixed-signal ICs produced worldwide, and silicon solar cells represent ~95% of global photovoltaic capacity. In microelectronics, the International Technology Roadmap for Semiconductors (now IRDS) has driven Si transistor gate lengths from 10 µm (1971, Intel 4004) to 2 nm node (2024, TSMC/Intel), with each generation approximately doubling transistor density per Moore's Law; modern 2 nm node chips contain ~100 billion transistors on a die the size of a fingernail. In photovoltaics, monocrystalline Si cells achieve record efficiencies of 26.7% (single junction, UNSW/Kaneka) and passivated emitter rear contact (PERC) cells dominate commercial production at ~22–24% efficiency; multi-junction Si-based tandems with perovskite top cells now exceed 33%. Silicon's indirect bandgap — while disadvantageous for light emission — means it is transparent to near-IR light above ~1.1 µm, enabling Si photonics for on-chip optical interconnects and LiDAR.

Beyond semiconductors, silicon is the essential alloying element in aluminum casting alloys (Al-Si, 4–22% Si), the monomer for the entire silicone polymer industry, a critical reductant in steelmaking, and the substrate for emerging quantum computing platforms based on spin qubits in isotopically purified ²⁸Si. Al-Si casting alloys (e.g. A380, A356) are the largest volume use of metallurgical Si, providing fluidity, low shrinkage, and high strength-to-weight ratio for automotive engine blocks, transmission housings, and structural castings. Silicone polymers (polysiloxanes, –Si(R₂)–O–) are made from chlorosilane monomers derived from Si metal and span applications from medical implants and cookware coatings to sealants, lubricants, and electrical insulators. In quantum computing, electron and nuclear spin qubits in isotopically enriched ²⁸Si (depleted in ²⁹Si to <50 ppm, eliminating the dominant nuclear spin decoherence source) have demonstrated coherence times exceeding 30 seconds — orders of magnitude longer than superconducting qubits — making Si spin qubits a leading platform for scalable fault-tolerant quantum computing.

General Properties

PropertyValueNotes
Atomic Number14Group 14 (carbon group), Period 3; 3s²3p² electron configuration; indirect bandgap semiconductor, Eg = 1.12 eV at 300 K. Bandgap decreases with temperature (~–2.4 meV/K), shifting the intrinsic carrier concentration from 9.65 × 10⁹ cm⁻³ at 300 K to ~10¹⁵ cm⁻³ at 600 K.
Atomic Mass28.085 uThree stable isotopes: ²⁸Si (92.23%), ²⁹Si (4.67%), ³⁰Si (3.10%). Isotopically purified ²⁸Si (>99.995%) is used for nuclear spin–free quantum computing substrates and the silicon kilogram mass standard (Avogadro project).
Density (20 °C)2.329 g/cm³Unusually, liquid Si (2.57 g/cm³) is denser than solid Si — Si expands on solidification (like water/ice), a critical consideration in Czochralski crystal growth where the solid floats on the melt and diameter control depends on this density inversion.
Melting Point1,414 °C (1,687 K)The 1,414 °C melting point is an ITS-90 secondary reference point. Czochralski pulling of 300 mm Si boules occurs just below this temperature in an Ar atmosphere, with crystal diameter controlled by seed rotation and pull rate.
Boiling Point3,265 °CHigh boiling point ensures negligible Si evaporation during crystal growth and high-temperature oxidation/diffusion processes in semiconductor fabrication (up to ~1,200 °C in tube furnaces).
Thermal Conductivity149 W/m·K (300 K)High thermal conductivity for a semiconductor — ~10× that of GaAs (46 W/m·K) — is critical for heat dissipation in high-power ICs and power devices. Decreases strongly with temperature (~T⁻¹·⁵) due to phonon-phonon (Umklapp) scattering; at 1,000 K, Si thermal conductivity drops to ~30 W/m·K.
Electrical Resistivity640 Ω·cm (intrinsic, 300 K); ~10⁻³ Ω·cm (heavily doped)The source lists "640 µΩ·cm" — this is incorrect; intrinsic Si resistivity is ~640 Ω·cm (not µΩ·cm). Resistivity spans 13 orders of magnitude from undoped (~640 Ω·cm) to heavily doped (<10⁻³ Ω·cm), controlled by dopant concentration (B for p-type, P/As for n-type).
Crystal StructureDiamond cubic; a = 5.431 ÅEach Si atom is tetrahedrally bonded to four neighbors via sp³ hybrid orbitals, giving the diamond structure (space group Fd-3m). The diamond cubic structure is both the source of Si's hardness and brittleness and the geometric basis for CMOS device fabrication on (100) and (111) wafer orientations.

Mechanical Properties

PropertyValueNotes
Young's Modulus130–190 GPa (direction-dependent)Strongly anisotropic: 130 GPa along <100>, 169 GPa along <110>, 188 GPa along <111>. MEMS spring constant calculations and wafer bow/stress models use orientation-specific values; (100) wafers use ~130 GPa for in-plane stress analysis.
HardnessMohs 6.5; ~1,150 HVHard and brittle — Si cleaves easily along {111} planes, making wafer scribing and dicing straightforward but susceptible to chipping. Diamond or CBN tools are required for machining Si targets, rods, and optics.
Fracture Toughness~0.7–0.9 MPa·m½Very low fracture toughness — Si is purely brittle at room temperature with no plastic deformation before fracture. This governs wafer yield in back-end-of-line thinning (to <50 µm for 3D stacking) and limits Si MEMS device minimum feature sizes.

Chemical Properties

PropertyValue / BehaviorNotes
Oxidation States–4 (silicide), +4 (SiO₂, silicates)Si⁴⁺ in SiO₂ and silicates is the dominant crustal form. The thermally grown SiO₂ gate dielectric (grown at ~900–1,100 °C in dry O₂ or H₂O/O₂) was the key enabler of planar CMOS — its near-perfect Si/SiO₂ interface (interface state density ~10¹⁰ cm⁻²eV⁻¹) defines transistor threshold voltage stability.
Corrosion ResistanceExcellent; inert to water, HCl, H₂SO₄; etched by HF and KOHSi is resistant to most acids but dissolves in HF (attacks SiO₂ native oxide: SiO₂ + 6HF → H₂SiF₆ + 2H₂O) and in hot KOH/TMAH solution (anisotropic wet etching along {111} planes, used in MEMS microfabrication for V-grooves, membranes, and released structures).
Native OxideSiO₂, 2–4 nm, self-limiting at room temperatureThe native SiO₂ passivation layer provides chemical stability and is the starting point for thermal oxidation in device fabrication. High-κ dielectrics (HfO₂, ZrO₂) replaced SiO₂ as the gate dielectric below ~45 nm node due to quantum tunneling through ultra-thin SiO₂.
IdentifierValue
SymbolSi
Atomic Number14
CAS Number7440-21-3
UN NumberUN1346 (silicon powder, amorphous)
EINECS Number231-130-8
IsotopeTypeNotes
²⁸Si Stable 92.23% natural abundance; I = 0 (nuclear spin–free). Enriched ²⁸Si (>99.995%, <50 ppm ²⁹Si) is the substrate for silicon spin qubits — eliminating ²⁹Si nuclear spins extends electron spin coherence times to >30 seconds. The BIPM Avogadro project used isotopically enriched ²⁸Si spheres to redefine the kilogram via precise determination of Avogadro's number.
²⁹Si Stable 4.67% natural abundance; I = 1/2 — the only NMR-active Si isotope. ²⁹Si MAS-NMR is the standard tool for characterizing Si coordination (Q⁰–Q⁴ species) in silicates, zeolites, glasses, and silicone polymers. At >50 ppm in quantum computing substrates, ²⁹Si nuclear spins are the dominant decoherence source for electron spin qubits.
³⁰Si Stable 3.10% natural abundance; I = 0. Enriched ³⁰Si is used as an IDMS spike for high-precision Si isotope ratio measurements. δ³⁰Si fractionation (MC-ICP-MS) traces silica cycling in the ocean (diatom uptake), continental weathering, and hydrothermal systems — an important proxy for past ocean productivity.
³¹Si Radioactive t½ = 157.3 minutes (β⁻, Emax = 1.49 MeV; no gamma emission). Produced by ³⁰Si(n,γ)³¹Si or ²⁸Si(n,p)²⁸Al reactions in research reactors; used in neutron activation analysis for Si determination in geological and industrial samples. Also produced by cosmic ray spallation — a minor but measurable atmospheric cosmogenic nuclide.

Scientific & Research Applications

Use CaseForm Typically UsedDescription
Semiconductor Device FabricationCZ or FZ Si wafers (99.9999%+), 150–300 mm diameterSi wafers are the substrate for virtually all CMOS logic, DRAM, NAND flash, and power devices. Float-zone (FZ) Si (lower O and C than CZ) is used for high-resistivity power devices and detectors; CZ Si with controlled oxygen concentration is standard for CMOS. Wafer orientation ((100) for CMOS, (111) for bipolar) determines etch anisotropy and channel mobility.
Quantum Computing (Spin Qubits)Isotopically enriched ²⁸Si (>99.995%), epitaxial Si/SiGe heterostructuresElectron and hole spin qubits confined in Si/SiGe quantum dots benefit from ²⁸Si's nuclear spin–free environment, achieving T₂ coherence times >30 seconds. Intel's Horse Ridge cryogenic controller and academic groups at TU Delft, UNSW, and CEA-Leti are developing scalable Si spin qubit arrays; 2-qubit gate fidelities >99% have been demonstrated.
Si Photonics & IR OpticsSi wafers, Si sputtering targets (99.999%), float-zone Si for IR windowsSi is transparent from 1.1–7 µm, making it an IR window and lens material for thermal imaging and LIDAR. Si photonics (ring resonators, Mach-Zehnder modulators, grating couplers on SOI wafers) enables on-chip optical data links at >100 Gb/s, addressing the bandwidth bottleneck in AI accelerator interconnects.
MEMS & SensorsSi wafers (various orientations/resistivities), SOI wafersSi MEMS exploits anisotropic wet etching (KOH, TMAH) and deep reactive ion etching (DRIE) to fabricate accelerometers (every smartphone), pressure sensors, gyroscopes, microphones, and microfluidic lab-on-chip devices. Piezoresistive Si pressure sensors dominate automotive and medical pressure sensing markets.
Thin-Film Deposition TargetsSi sputtering targets (99.999%), Si evaporation pelletsSi sputtering targets are used for deposition of a-Si:H (amorphous hydrogenated Si for TFT backplanes in LCD/OLED displays), Si₃N₄ and SiO₂ anti-reflection coatings, and Si diffusion barrier layers in thin-film photovoltaics and microelectronics back-end metallization.

Industrial & Commercial Applications

SectorForm / Grade UsedDescription
Solar Cells (Photovoltaics)Solar-grade Si (99.95–99.9999%), mono- and multi-crystalline wafersSi solar cells represent ~95% of global PV capacity (~600 GW installed). Monocrystalline PERC cells achieve 22–24% commercial efficiency; TOPCon (tunnel oxide passivated contact) cells reach ~25%; Si-perovskite tandems >33%. Polysilicon feedstock for PV is produced by Siemens CVD process (trichlorosilane decomposition) at ~350,000 tonnes/year.
Aluminum-Silicon Casting AlloysMetallurgical-grade Si (97.5–99.5%), master alloy additionsSi additions (4–22 wt%) to aluminum improve castability (reduced shrinkage, better fluidity), wear resistance, and strength. Hypereutectic Al-Si alloys (17–22% Si) are used for automotive cylinder liners and pistons; A380 (8.5% Si) and A356 (7% Si) are the dominant structural die-casting alloys for automotive and aerospace structures.
Silicone PolymersMetallurgical Si (99.5%+) for chlorosilane synthesis; trichlorosilane intermediateSi metal reacts with CH₃Cl (Rochow-Müller direct process) to produce dimethyldichlorosilane, the primary monomer for polydimethylsiloxane (PDMS) and the broader silicone polymer family. Silicones (~1.5 million tonnes/year) serve as sealants, lubricants, medical implant coatings, electrical insulators, and release agents.
Steel Deoxidation & FerrosiliconFerrosilicon (FeSi, 15–90% Si), metallurgical-grade SiSi is the primary deoxidizing agent in steelmaking — added as ferrosilicon to remove dissolved oxygen from the steel melt. FeSi is also used as an inoculant in cast iron to promote graphite flake nucleation. Global ferrosilicon production is ~9 million tonnes/year, consuming ~45% of all metallurgical Si production.
Abrasives & Refractory CeramicsSiC (from Si + C), Si₃N₄, Si powderSilicon carbide (SiC, from Acheson process — Si + C at ~2,500 °C) is one of the hardest commercial abrasives and a critical substrate for high-power/high-frequency (GaN-on-SiC) RF devices. Si₃N₄ ceramics (reaction-bonded or hot-pressed) provide wear resistance and thermal shock resistance for cutting tool inserts, turbine components, and bearing races.
PurityMain Use
97.5% (1N75)Technical/metallurgical grade for steel deoxidation, ferrosilicon production, and large-volume industrial alloying where trace-metal impurities (Fe, Al, Ca) at the percent level are acceptable
99.5% (2N5)Metallurgical grade for Al-Si casting alloy additions, silicone monomer (chlorosilane) synthesis via Rochow-Müller process, and ceramic/refractory SiC/Si₃N₄ precursor manufacture
99.95% (3N5)Solar grade — feedstock for polysilicon purification routes (fluidized bed reactor, upgraded metallurgical Si) targeting <1 ppb metals for multi-crystalline PV wafers and lower-efficiency solar applications
99.99% (4N)High-purity electronic grade for sputtering targets (a-Si:H TFT deposition, Si ARC coatings), Si evaporation sources, and lower-specification semiconductor substrates where <100 ppm total metallic impurities are acceptable
99.998% (4N8)Advanced semiconductor and MEMS applications — Si wafers for power devices, sensors, and microfluidics where dopant and metallic impurity control to <20 ppm is required for device-grade resistivity and minority carrier lifetime
99.999% (5N)Semiconductor-grade for CZ and FZ crystal growth, precision IR optics (windows, lenses, beam splitters for 1.1–7 µm), Si photonics substrates, and research wafers requiring <10 ppm total metallic impurities
99.9995% (5N5)Specialist grade for isotopically enriched ²⁸Si quantum computing substrates, Si kilogram mass standard (Avogadro project), advanced metrology, and fundamental physics experiments requiring the highest achievable purity before isotopic enrichment
Synonym / Alternative NameContext
SiChemical symbol; from Latin Silicium, coined by Berzelius (1824) who first isolated elemental Si by reduction of potassium fluorosilicate with potassium; derived from Latin silex/silicis (flint), reflecting the mineral origin.
Silicon metalCommercial and trade designation for metallurgical and solar-grade elemental Si — used in commodity markets (LME silicon, ASTM standards), supply chain documentation, and customs classification; technically a metalloid, but "silicon metal" is the universal commercial convention.
SiliciumThe element name in German, French, Dutch, and several other European languages (Silizium in German, Silicium in French/Latin/Italian); retained from Berzelius's original Latin coinage; used throughout European scientific literature, standards documents, and industrial specifications.