Arsenic

Arsenic — Material Page
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Arsenic (As, atomic number 33) is a brittle, steel-grey metalloid in Group 15 of the periodic table, isoelectronic with phosphorus and antimony, and one of the oldest known toxic substances in human history. With a density of 5.727 g/cm³ and a unique sublimation behavior — grey arsenic sublimes at 887 °C at standard pressure without passing through a liquid phase — it occupies an unusual position among the semi-metals. Its most stable and commercially relevant allotrope, grey (metallic) arsenic, adopts a layered rhombohedral crystal structure (A7 type) isostructural with antimony and bismuth, with strong covalent bonding within bilayers and weak van der Waals forces between them. This anisotropic structure governs its directional electrical conductivity (~34 nΩ·m along the c-axis), thermal properties (50.7 W/m·K), and mechanical brittleness (Mohs 3.5, no measurable ductility at room temperature).

Arsenic's defining role in modern technology is as the Group V constituent of gallium arsenide (GaAs) and related III-V compound semiconductors. GaAs has an electron mobility of 8,500 cm²/V·s — approximately six times that of silicon — and a direct bandgap of 1.42 eV, making it ideal for high-frequency transistors, laser diodes, solar cells, and LEDs. InAs (Eg = 0.36 eV, electron mobility ~33,000 cm²/V·s) is used in mid-infrared photodetectors and high-electron-mobility transistors (HEMTs). AlGaAs, InGaAs, and AlGaAsP alloys form the heterostructure layers in virtually all compound semiconductor laser and photovoltaic devices. Arsenic is also a well-established n-type dopant in silicon and germanium microelectronics, with a diffusion coefficient that gives it excellent shallow-junction control in CMOS fabrication.

In its +3 and +5 oxidation states, arsenic forms a broad range of compounds with varied industrial relevance. Arsenic trioxide (As₂O₃) — historically used as a poison and pesticide — has found modern application as a chemotherapy agent (Trisenox) for acute promyelocytic leukaemia. Arsenic pentoxide (As₂O₅) is used in glass manufacturing to improve UV transparency and bubble removal. Chromated copper arsenate (CCA) was a major wood preservative until phase-out in many jurisdictions due to environmental concerns. The compound arsine (AsH₃) is a critical MOCVD and MOVPE precursor gas for compound semiconductor epitaxy, though its extreme toxicity (IDLH 3 ppm) demands rigorous engineering controls.

Goodfellow provides high-purity arsenic (As) tailored to meet the needs of specialized industries and research fields. One of its most notable uses is in the production of gallium arsenide (GaAs) semiconductors, which are widely employed in high-speed electronic devices such as mobile phones, satellite communications systems, and light-emitting diodes (LEDs). Arsenic compounds also play a role in the manufacturing of specialized glass used in optics and infrared technologies. Furthermore, arsenic is used as a doping agent in silicon-based electronics to enhance conductivity and performance. Beyond electronics, arsenic is being explored for its potential applications in advanced materials research, particularly in areas like quantum computing and optoelectronics. Its ability to form stable compounds opens up possibilities for creating innovative materials with tailored properties. Goodfellow's arsenic products support groundbreaking research into next-generation electronic devices while contributing to advancements in optical technologies.

General Properties

PropertyValueNotes
Atomic Number33Group 15 (pnictogen), Period 4; metalloid between phosphorus and antimony
Atomic Mass74.922 uMonoisotopic — only one stable isotope (⁷⁵As, 100% natural abundance)
Density (20 °C)5.727 g/cm³Grey arsenic; ~2× the density of aluminum; denser than most engineering metals
Sublimation Point887 °C (at 1 atm)Grey arsenic sublimes directly to vapour — no stable liquid phase at standard pressure; triple point at 36.3 atm, 817 °C
Thermal Conductivity50.7 W/m·KAnisotropic; significantly higher along crystallographic layers; comparable to germanium
Specific Heat Capacity328 J/kg·KRelatively low; relevant for thermal management in compound semiconductor processing
Electrical Resistivity~34 nΩ·m (20 °C)Semimetallic; resistivity is highly anisotropic — conductivity along basal plane is much higher than perpendicular to it
Crystal StructureRhombohedral (A7 type)Same structure as antimony and bismuth; layered bilayer arrangement with strong intra-layer covalent bonds and weak inter-layer van der Waals forces
Lattice Parametersa = 3.760 Å; α = 54.13°Rhombohedral setting; hexagonal cell: a = 3.760 Å, c = 10.55 Å; used in XRD reference and epitaxy calculations

Mechanical Properties

PropertyValueNotes
HardnessMohs 3.5Brittle at room temperature; cleaves along rhombohedral planes; no measurable plastic deformation before fracture
Elastic (Young's) Modulus~8 GPaAnisotropic; low compared to most metals; relevant for thin-film stress modeling in semiconductor substrates
Fracture BehaviourBrittle (transgranular)Breaks along crystallographic cleavage planes; must be handled carefully to avoid particulate generation; toxic dust hazard

Thermal & Environmental Properties

PropertyValue / BehaviourNotes
Oxidation in AirSlow at RT; rapid above ~300 °CForms As₂O₃ (white oxide, arsenolite/claudetite polymorphs); surface tarnishing is visible after prolonged air exposure; store under inert atmosphere
ToxicologyHighly toxic — Class 1A carcinogenIARC Group 1 carcinogen; TLV-TWA 0.01 mg/m³ (ACGIH); IDLH 5 mg/m³; all handling must use appropriate PPE, local exhaust ventilation, and biological monitoring
Sublimation VapourAs₄ tetrahedral moleculesArsenic vapour consists primarily of As₄ tetrahedra below ~800 °C; dissociates to As₂ at higher temperatures; relevant for MOCVD source design

Chemical Properties

PropertyValue / BehaviourNotes
Oxidation States−3, 0, +3, +5+3 (arsenious, As₂O₃) and +5 (arsenic, As₂O₅) most industrially relevant; −3 in arsines (AsH₃); elemental As(0) in grey allotrope
Acid ResistanceResistant to HCl; dissolved by HNO₃, H₂SO₄ (hot conc.)Reacts with oxidising acids to form arsenious or arsenic acid; resistant to non-oxidising dilute acids; dissolves in aqua regia
Alkali ResistanceSlowly dissolved by NaOH solutionsForms arsenites in alkaline conditions; more resistant than phosphorus but more reactive than antimony toward alkalis
Galvanic BehaviourCathodic relative to most metalsElectropositive in galvanic series; in GaAs crystal growth, As overpressure is maintained to prevent preferential Ga evaporation
IdentifierValue
SymbolAs
Atomic Number33
CAS Number7440-38-2
UN NumberUN1558 (solid); UN2188 (arsine gas)
EINECS Number231-148-6
IsotopeTypeNotes
⁷⁵As Stable 100% natural abundance; I = 3/2, NMR-active (⁷⁵As NMR used to study GaAs and InAs electronic structure); only stable isotope — arsenic is monoisotopic
⁷³As Radioactive t½ = 80.3 days (β⁺/EC); used as a PET imaging tracer for arsenic pharmacokinetics and environmental transport studies
⁷⁴As Radioactive t½ = 17.8 days (β⁺/β⁻); used in neutron activation analysis (NAA) for trace arsenic determination in geological and biological samples
⁷⁶As Radioactive t½ = 26.3 h (β⁻); produced by neutron activation of ⁷⁵As; gamma emission at 559 keV used for INAA quantification

Scientific & Research Applications

Use CaseForm Typically UsedDescription
III-V Compound Semiconductor SynthesisHigh-purity lump, shot (6N)Arsenic is the Group V source for GaAs, InAs, AlAs, InGaAs, and AlGaAsP compound semiconductors. GaAs (Eg = 1.42 eV, electron mobility 8,500 cm²/V·s) is the workhorse for high-frequency MMICs, laser diodes, and multi-junction solar cells. InAs (Eg = 0.36 eV, mobility ~33,000 cm²/V·s) is used in mid-IR detectors and HEMTs. As₄ vapour from heated elemental arsenic is the standard Group V source in MBE growth.
MOCVD / MOVPE EpitaxyAs source (via AsH₃ or TBAs precursor)In metal-organic chemical vapour deposition, arsenic is delivered as arsine (AsH₃) or tertiary butyl arsine (TBAs) — synthesised from high-purity elemental As. Precise stoichiometry control of the As/III flux ratio governs surface morphology, defect density, and optical properties of the epilayer.
Silicon & Germanium DopingHigh-purity As (4N–6N), ion implantation sourceArsenic is an n-type dopant in Si and Ge. Its larger atomic radius (relative to P) gives slower diffusion, enabling tighter shallow-junction control in sub-22 nm CMOS nodes. Ion implantation of As⁺ followed by rapid thermal anneal (RTA) is the standard source/drain formation process in leading-edge logic devices.
Neutron Activation AnalysisHigh-purity standard, foil⁷⁵As(n,γ)⁷⁶As with a thermal neutron cross-section of 4.09 barn produces ⁷⁶As (t½ = 26.3 h, 559 keV γ). INAA is the reference method for trace As determination in geological samples, coal fly ash, and biological matrices at µg/g sensitivity — exploiting arsenic's monoisotopic character for unambiguous identification.
Two-Dimensional Materials ResearchHigh-purity lump, thin filmsArsenene (a monolayer of grey arsenic) is a predicted wide-bandgap (2D indirect ~2.49 eV) semiconductor with high carrier mobility — a candidate for post-graphene 2D electronics. Buckled and puckered arsenene phases have been grown on Ag(111) and studied by STM/ARPES. As is also a key constituent of topological crystalline insulator thin films.
Analytical Reference StandardsHigh-purity As, ICP standard solutionsArsenic is a priority regulated element in drinking water (WHO guideline: 10 µg/L), soils, and food. High-purity elemental As is the primary standard for ICP-MS, ICP-OES, and AAS calibration in environmental monitoring, food safety, and clinical toxicology laboratories.

Industrial & Commercial Applications

SectorForm / Compound UsedDescription
High-Speed Electronics & RFGaAs wafers and epitaxial structuresGaAs-based MMICs (monolithic microwave integrated circuits) dominate RF front-end modules in smartphones, satellite communications, and radar systems, where Si cannot meet the gain-bandwidth requirements above 10 GHz. The GaAs substrate and device market represents >$10 billion annually.
Compound Semiconductor LEDs & LasersAlGaAs, InGaAsP heterostructuresAlGaAs/GaAs double-heterostructure laser diodes underpin fiber optic communications (850 nm VCSELs), barcode scanners, and laser printers. InGaAsP/InP lasers operate at 1310 nm and 1550 nm for long-haul telecoms. AlGaInP provides the red/orange/yellow LEDs in traffic signals and automotive lighting.
Multi-Junction Solar CellsGaAs, InGaAs, AlGaAsTriple-junction GaInP/GaAs/Ge concentrator solar cells achieve >44% efficiency under concentrated illumination — far exceeding Si limits — and are standard for space power (satellites, Mars rovers). Arsenic-containing III-V cells set the world record for terrestrial PV efficiency.
Lead Alloy HardeningAs additions to Pb (0.1–0.5%)Small additions of arsenic (0.15–0.25 wt%) to lead dramatically improve creep resistance at elevated temperatures and harden lead cable sheathing, battery grid alloys, and shot. As refines the lead grain structure and raises the recrystallisation temperature, extending service life significantly.
Glass & Optical ManufacturingAs₂O₃, As₂O₅Arsenic trioxide improves UV transmission in optical glass and acts as a fining agent, releasing oxygen to collapse micro-bubbles. Arsenic-based chalcogenide glasses (As₂S₃, As₂Se₃) transmit in the mid-IR (3–12 µm) and are used for thermal imaging lenses, IR fibers, and chemical sensing waveguides.
Chemotherapy (Medical)As₂O₃ (Trisenox)Arsenic trioxide is an FDA-approved chemotherapy agent for relapsed/refractory acute promyelocytic leukaemia (APL), operating by inducing apoptosis and differentiation of malignant promyelocytes. This represents a remarkable reversal of arsenic's historical association with toxicity.
GradePurityMain Use
High Purity Arsenic99.99%General R&D and optoelectronic device prototyping — suitable for GaAs and InAs polycrystal synthesis, Bridgman and Czochralski crystal growth feedstock, and laboratory-scale compound semiconductor research where sub-ppm impurity control is required but epitaxial-grade purity is not essential
Ultra High Purity Arsenic99.9999%Semiconductor-grade applications and epitaxial growth — the standard source material for MBE and MOCVD of GaAs, InGaAs, AlGaAs, and related III-V heterostructures; minimizes background carrier concentrations and deep-level trap densities critical for laser diode, HEMT, and multi-junction solar cell performance
Synonym / Alternative NameContext
AsChemical symbol, from Latin Arsenicum
ArsenicumLatin name; origin of chemical symbol As
Grey arsenicMost stable, metallic allotrope; the commercially supplied form
Yellow arsenicUnstable molecular allotrope (As₄); formed by rapid condensation of vapour; highly reactive and photosensitive
Black arsenicAmorphous form produced by rapid condensation; metastable; higher reactivity than grey form
Arsenic metalGeneral commercial and regulatory term
Arsen (DE) / Arsénico (ES)German and Spanish language equivalents