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Formula: In
Form: Disk
Material: Indium
CAS Number: 7440-74-6
Commodity: Metals
Goodfellow's indium disks, available with a maximum purity of 99.999% (5N), are prized for their unique combination of properties. Indium is known for its low melting point, high ductility, and excellent wetting characteristics. These properties make it invaluable in the production of low-temperature solders, liquid crystal displays (LCDs), and touch screens. In the semiconductor industry, indium is a key component in the manufacture of compound semiconductors like indium gallium arsenide, used in high-speed electronics and photonics. Its use in transparent conductive coatings for solar cells and smart windows highlights its role in energy-efficient technologies. In research, high-purity indium is crucial for developing new alloys, studying superconductivity, and advancing thin-film deposition techniques. The increasing demand for indium in emerging technologies underscores its significance in both scientific exploration and industrial applications.
Technical Data Sheet Safety Data Sheet Tolerance Properties
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Tolerances

Disk
Thickness >0.05mm ±10%
Thickness <0.01mm ±25%
Thickness 0.01mm - 0.05mm ±15%

Material Properties for Metals

Atomic Properties
Element Value
Atomic number 49
Crystal structure Face centred tetragonal
Electronic structure Kr 4d¹⁰ 5s² 5p¹
Valences shown 1, 2, 3
Atomic weight( amu ) 114.82
Thermal neutron absorption cross-section( Barns ) 194
Photo-electric work function( eV ) 4.12
Natural isotope distribution( Mass No./% ) 113/ 4.3
Natural isotope distribution( Mass No./% ) 115/ 95.7
Atomic radius - Goldschmidt( nm ) 0.157
Ionisation potential( No./eV ) 3/ 28.0
Ionisation potential( No./eV ) Apr-54
Ionisation potential( No./eV ) 2/ 18.9
Ionisation potential( No./eV ) 1/ 5.79
Mechanical Properties
Element Value
Material condition Polycrystalline
Material condition Soft
Poisson's ratio 0.45
Poisson's ratio 0.45
Bulk modulus( GPa ) 35.3
Bulk modulus( GPa ) 35.3
Tensile modulus( GPa ) 10.6
Tensile modulus( GPa ) 10.6
Hardness - Vickers( kgf mm⁻² ) 10
Tensile strength( MPa ) 2.6-4.5
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 8.8@20@20°C
Superconductivity critical temperature( K ) 3.41
Temperature coefficient( K⁻¹ ) 0.0052@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) 0.69
Physical Properties
Element Value
Boiling point( C ) 2080
Density( gcm⁻³ ) 7.3@20°C
Thermal Properties
Element Value
Melting point( C ) 156.6
Latent heat of evaporation( J g⁻¹ ) 2024
Latent heat of fusion( J g⁻¹ ) 28.5
Specific heat( J K⁻¹ kg⁻¹ ) 234@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 81.8@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 24.8@0-100°C

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