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Formula: HfO₂
Form: Sputtering Target
Material: Hafnium Oxide
CAS Number: 12055-23-1
Commodity: Compounds
Thickness: 3mm
Production Method: Hot Pressed

Hafnium Oxide Sputtering Target

Hafnium Oxide Sputtering Target is a high-purity ceramic form of hafnium oxide (HfO₂), widely recognized for its excellent dielectric properties, high refractive index, and chemical stability. These targets are critical in thin-film deposition processes, enabling the production of uniform coatings for electronics, optics, and energy devices. Industries including semiconductors, photovoltaics, and advanced coatings rely on hafnium oxide sputtering targets to fabricate dielectric layers, transparent conductive films, and optical coatings with superior performance. Specific technologies benefiting from this material include high-k gate dielectrics in thin-film transistors where amorphous hafnium oxide films provide enhanced electrical reliability, optical coatings with tailored refractive indices for laser systems and protective optics, and transparent thin films for solar cells and displays. In research, sputtering targets are essential for exploring new hafnium-based oxide materials with tunable properties, supporting innovation in nanotechnology, microelectronics, and photonics. By combining high stability with processability, Hafnium Oxide Sputtering Target provides immense value in advancing next-generation devices and industrial applications that demand precision-engineered thin films.
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