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Formula: Nb
Form: Sputtering Target
Material: Niobium
CAS Number: 7440-03-1
Commodity: Metals
Purity: 99.9%
Niobium Sputtering Targets are available in 7 variations. Niobium has properties such as a high melting point, low density and resistance to corrosion. These disks are used for thin film deposition in microelectronics, optical coatings, and other high-tech applications where niobium's properties are desired. Our range provides high purity niobium disks for research and industrial sputtering processes.
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Material Properties for Metals

Atomic Properties
Element Value
Atomic number 41
Crystal structure Body centred cubic
Electronic structure Kr 4d⁴ 5s¹
Valences shown 2, 3, 4, 5
Atomic weight( amu ) 92.9064
Thermal neutron absorption cross-section( Barns ) 1.15
Photo-electric work function( eV ) 4.3
Atomic radius - Goldschmidt( nm ) 0.147
Ionisation potential( No./eV ) 3/ 25.0
Ionisation potential( No./eV ) 2/ 14.3
Ionisation potential( No./eV ) 6/ 103
Ionisation potential( No./eV ) 1/ 6.88
Ionisation potential( No./eV ) 4/ 38.3
Ionisation potential( No./eV ) 5/ 50.5
Mechanical Properties
Element Value
Material condition Hard
Material condition Soft
Poisson's ratio 0.397
Poisson's ratio 0.397
Bulk modulus( GPa ) 170.3
Bulk modulus( GPa ) 170.3
Tensile modulus( GPa ) 104.9
Tensile modulus( GPa ) 104.9
Izod toughness( J m⁻¹ ) 10-120
Hardness - Vickers( kgf mm⁻² ) 115
Hardness - Vickers( kgf mm⁻² ) 160
Tensile strength( MPa ) 330
Tensile strength( MPa ) 585
Yield strength( MPa ) 550
Yield strength( MPa ) 240
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 16@20@20°C
Superconductivity critical temperature( K ) 9.25
Temperature coefficient( K⁻¹ ) 0.0026@0-100°C
Physical Properties
Element Value
Boiling point( C ) 4742
Density( gcm⁻³ ) 8.57@20°C
Thermal Properties
Element Value
Melting point( C ) 2468
Latent heat of evaporation( J g⁻¹ ) 7360
Latent heat of fusion( J g⁻¹ ) 290
Specific heat( J K⁻¹ kg⁻¹ ) 268@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 53.7@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 7.2@0-100°C

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