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Formula: In
Form: Foil/Film/Sheet
Material: Indium
CAS Number: 7440-74-6
Commodity: Metals
Indium Foil is a high-purity, flexible material with excellent electrical and thermal conductivity, making it ideal for precise scientific applications. It is commonly used in semiconductor research, where it forms low-resistance electrical contacts in devices such as diodes and transistors. In thin-film deposition processes, indium foil serves as a target material for sputtering. Its low melting point (156°C) makes it suitable for soldering in electronics, especially for components requiring reliable bonding at low temperatures. Indium foil is also essential in cryogenics and low-temperature physics experiments, where it’s used in heat exchangers and thermoelectric devices. With its corrosion resistance and stable performance, indium foil from Goodfellow plays a crucial role in advancing research in optoelectronics, sensors, energy storage systems, and other cutting-edge applications in R&D laboratories.
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Tolerances

Foil/Film/Sheet
Thickness <0.01mm ±25%
Thickness 0.01mm - 0.05mm ±15%
Thickness >0.05mm ±10%

Material Properties for Metals

Atomic Properties
Element Value
Atomic number 49
Crystal structure Face centred tetragonal
Electronic structure Kr 4d¹⁰ 5s² 5p¹
Valences shown 1, 2, 3
Atomic weight( amu ) 114.82
Thermal neutron absorption cross-section( Barns ) 194
Photo-electric work function( eV ) 4.12
Natural isotope distribution( Mass No./% ) 113/ 4.3
Natural isotope distribution( Mass No./% ) 115/ 95.7
Atomic radius - Goldschmidt( nm ) 0.157
Ionisation potential( No./eV ) 3/ 28.0
Ionisation potential( No./eV ) Apr-54
Ionisation potential( No./eV ) 2/ 18.9
Ionisation potential( No./eV ) 1/ 5.79
Mechanical Properties
Element Value
Material condition Polycrystalline
Material condition Soft
Poisson's ratio 0.45
Poisson's ratio 0.45
Bulk modulus( GPa ) 35.3
Bulk modulus( GPa ) 35.3
Tensile modulus( GPa ) 10.6
Tensile modulus( GPa ) 10.6
Hardness - Vickers( kgf mm⁻² ) 10
Tensile strength( MPa ) 2.6-4.5
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 8.8@20@20°C
Superconductivity critical temperature( K ) 3.41
Temperature coefficient( K⁻¹ ) 0.0052@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) 0.69
Physical Properties
Element Value
Boiling point( C ) 2080
Density( gcm⁻³ ) 7.3@20°C
Thermal Properties
Element Value
Melting point( C ) 156.6
Latent heat of evaporation( J g⁻¹ ) 2024
Latent heat of fusion( J g⁻¹ ) 28.5
Specific heat( J K⁻¹ kg⁻¹ ) 234@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 81.8@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 24.8@0-100°C

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