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Silicon Single Crystal - T 1mm Ø 50.8mm

Details

SKU: 1000003350 Product Code: SI00-SH-000106
Silicon Single Crystal offers exceptional purity, uniform atomic arrangement, and consistent electronic properties, making it the cornerstone material for semiconductor devices. Produced through methods such as the Czochralski or float-zone process, it provides defect-free crystal structures essential for high-performance electronics. Industries such as microelectronics, photovoltaics, and photonics rely on single-crystal silicon for integrated circuits, solar cells, and optical components. Specific applications include microchip wafer production, fabrication of high-efficiency photovoltaic cells, and substrates for MEMS sensors. In research, single-crystal silicon is crucial for studying carrier mobility, crystal defect physics, and nanoscale device fabrication. Its precise lattice structure ensures predictable performance, solidifying its role as a foundation for modern electronics and optoelectronic systems.
Formula: Si
Percentage Purity: 99.999%
Diameter: 101.6mm
Electrical Type: P-Type
Orientation: -110
Thickness: 1mm
CAS Number: 7440-21-3
UOM Code: 027-727-16
Legacy Code: SI003106
Distributor Code:
GF02772716

Tolerances

Single Crystal
Orientation See Item
Thickness +2% / -1%
Length +2% / -1%
$780.00
each
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Material Properties

Atomic Properties
Element Value
Atomic number 14
Crystal structure Diamond
Electronic structure Ne 3s² 3p²
Valences shown 4
Atomic weight( amu ) 28.0855
Thermal neutron absorption cross-section( Barns ) 0.16
Photo-electric work function( eV ) 4.2
Natural isotope distribution( Mass No./% ) 30/ 3.10
Natural isotope distribution( Mass No./% ) 29/ 4.67
Natural isotope distribution( Mass No./% ) 28/ 92.23
Atomic radius - Goldschmidt( nm ) 0.117
Ionisation potential( No./eV ) 5/ 167
Ionisation potential( No./eV ) 1/ 8.15
Ionisation potential( No./eV ) 2/ 16.3
Ionisation potential( No./eV ) 3/ 33.5
Ionisation potential( No./eV ) 4/ 45.1
Ionisation potential( No./eV ) 6/ 205
Mechanical Properties
Element Value
Hardness - Mohs 7
Material condition Polycrystalline
Poisson's ratio 0.42
Bulk modulus( GPa ) 100
Tensile modulus( GPa ) 113
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 23 x 10¹⁰@20°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) -41.56
Physical Properties
Element Value
Boiling point( C ) 2355
Density( gcm⁻³ ) 2.34@20°C
Thermal Properties
Element Value
Melting point( C ) 1410
Latent heat of evaporation( J g⁻¹ ) 13700
Latent heat of fusion( J g⁻¹ ) 1650
Specific heat( J K⁻¹ kg⁻¹ ) 703@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 80-150@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 4.7-7.6@0-100°C