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Formula: Ge
Form: Sputtering Target
Material: Germanium
CAS Number: 7440-56-4
Commodity: Metals
Purity: 99.999%
Germanium Sputtering Targets are high-purity germanium disks available in 4 variations for customizable diameter, thickness and orientation options to meet different application needs. Ultra-high purity germanium has excellent semiconducting properties ideal for thin film deposition via sputtering. Common applications include manufacturing microelectronics, optical coatings and advanced solar cells, where precise control over germanium film thickness and composition is critical.
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Material Properties for Metals

Atomic Properties
Element Value
Atomic number 32
Crystal structure Diamond
Electronic structure Ar 3d¹⁰ 4s² 4p²
Valences shown 2,4
Atomic weight( amu ) 72.59
Thermal neutron absorption cross-section( Barns ) 2.3
Photo-electric work function( eV ) 4.8
Natural isotope distribution( Mass No./% ) 72/ 27.4
Natural isotope distribution( Mass No./% ) 73/ 7.8
Natural isotope distribution( Mass No./% ) 76/ 7.8
Natural isotope distribution( Mass No./% ) 70/ 20.5
Natural isotope distribution( Mass No./% ) 74/ 36.5
Atomic radius - Goldschmidt( nm ) 0.139
Ionisation potential( No./eV ) 4/ 45.7
Ionisation potential( No./eV ) 3/ 34.22
Ionisation potential( No./eV ) 1/ 7.90
Ionisation potential( No./eV ) 5/ 93.5
Ionisation potential( No./eV ) 2/ 15.93
Mechanical Properties
Element Value
Hardness - Mohs 6.25
Material condition Polycrystalline
Poisson's ratio 0.32
Bulk modulus( GPa ) 73.9
Tensile modulus( GPa ) 79.9
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 46x10⁶@22@22°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) 33.9
Physical Properties
Element Value
Boiling point( C ) 2830
Density( gcm⁻³ ) 5.32@20°C
Thermal Properties
Element Value
Melting point( C ) 937.4
Latent heat of evaporation( J g⁻¹ ) 4516
Latent heat of fusion( J g⁻¹ ) 465
Specific heat( J K⁻¹ kg⁻¹ ) 322@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 60.2@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 5.75@0-100°C

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