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Formula: Ge
Form: Sputtering Target
Material: Germanium
CAS Number: 7440-56-4
Commodity: Metals
Purity:
99.999%
Germanium Sputtering Targets are high-purity germanium disks available in 4 variations for customizable diameter, thickness and orientation options to meet different application needs. Ultra-high purity germanium has excellent semiconducting properties ideal for thin film deposition via sputtering. Common applications include manufacturing microelectronics, optical coatings and advanced solar cells, where precise control over germanium film thickness and composition is critical.
Material Properties for Metals
Atomic Properties
| Element | Value |
|---|---|
| Atomic number | 32 |
| Crystal structure | Diamond |
| Electronic structure | Ar 3d¹⁰ 4s² 4p² |
| Valences shown | 2,4 |
| Atomic weight( amu ) | 72.59 |
| Thermal neutron absorption cross-section( Barns ) | 2.3 |
| Photo-electric work function( eV ) | 4.8 |
| Natural isotope distribution( Mass No./% ) | 72/ 27.4 |
| Natural isotope distribution( Mass No./% ) | 73/ 7.8 |
| Natural isotope distribution( Mass No./% ) | 76/ 7.8 |
| Natural isotope distribution( Mass No./% ) | 70/ 20.5 |
| Natural isotope distribution( Mass No./% ) | 74/ 36.5 |
| Atomic radius - Goldschmidt( nm ) | 0.139 |
| Ionisation potential( No./eV ) | 4/ 45.7 |
| Ionisation potential( No./eV ) | 3/ 34.22 |
| Ionisation potential( No./eV ) | 1/ 7.90 |
| Ionisation potential( No./eV ) | 5/ 93.5 |
| Ionisation potential( No./eV ) | 2/ 15.93 |
Mechanical Properties
| Element | Value |
|---|---|
| Hardness - Mohs | 6.25 |
| Material condition | Polycrystalline |
| Poisson's ratio | 0.32 |
| Bulk modulus( GPa ) | 73.9 |
| Tensile modulus( GPa ) | 79.9 |
Electrical Properties
| Element | Value |
|---|---|
| Electrical resistivity( µOhmcm ) | 46x10⁶@22@22°C |
| Thermal emf against Pt (cold 0C - hot 100C)( mV ) | 33.9 |
Physical Properties
| Element | Value |
|---|---|
| Boiling point( C ) | 2830 |
| Density( gcm⁻³ ) | 5.32@20°C |
Thermal Properties
| Element | Value |
|---|---|
| Melting point( C ) | 937.4 |
| Latent heat of evaporation( J g⁻¹ ) | 4516 |
| Latent heat of fusion( J g⁻¹ ) | 465 |
| Specific heat( J K⁻¹ kg⁻¹ ) | 322@25°C |
| Thermal conductivity( W m⁻¹ K⁻¹ ) | 60.2@0-100°C |
| Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) | 5.75@0-100°C |
Other Customers Purchased
-
Nickel/Iron/Molybdenum Alloy Sputtering Target (Ni80/Fe15.5/Mo 4.5) Formula: Ni80/Fe15.5/Mo 4.5
Thickness: 3mm
Diameter: 50.8mm
UOM Code: 934-571-32
eachStarting at $361.99
Discounts applied for volume purchases -
Germanium Rod Formula: Ge
Percentage Purity: 99.999%
Diameter: 2mm
Length: 50mm
Electrical Type: N-Type
Structure: Polycrystalline
CAS Number: 7440-56-4
UOM Code: 012-027-80
eachStarting at $307.51
Discounts applied for volume purchases -
Zinc Oxide/Aluminum Oxide Sputtering Target (ZnO 99/Al₂O₃ 1) Formula: ZnO 99/Al₂O₃ 1
Thickness: 3mm
Diameter: 25.4mm
UOM Code: 872-065-75
eachStarting at $609.23
Discounts applied for volume purchases -
Nickel/Vanadium Alloy Sputtering Target (Ni93/V 7) Formula: Ni93/V 7
Thickness: 3mm
Diameter: 76.2mm
UOM Code: 300-832-51
eachStarting at $449.41
Discounts applied for volume purchases -
Germanium Foil Formula: Ge
Percentage Purity: 99.999%
Thickness: 0.25mm
Length 1: 10mm
Length 2: 10mm
Electrical Type: N-Type
Structure: Polycrystalline
CAS Number: 7440-56-4
UOM Code: 006-336-64
eachStarting at $338.58
Discounts applied for volume purchases -
Zinc Oxide/Gallium Oxide (2% GZO) Sputtering Target Formula: ZnO 98 / Ga2O3 2
Thickness: 5mm
Diameter: 25mm
UOM Code: 315-266-36
eachStarting at $724.88
Discounts applied for volume purchases
