Germanium Sputtering Target

Germanium Sputtering Target is a high-purity deposition material prized for its exceptional infrared transparency, high refractive index, and semiconductor performance. Engineered for magnetron sputtering, it offers uniform composition, low impurity content, and dense microstructure, enabling consistent film thickness and superior adhesion in thin-film applications. Industries rely on germanium sputtering targets for producing IR optical coatings, semiconductor layers in high-speed electronics, and functional films in advanced photonics. Specific uses include precision optical coatings for infrared imaging systems, thin-film semiconductor layers in photodetectors, and germanium-alloyed coatings for tailored optoelectronic properties. In research, high-purity germanium targets are pivotal for investigating crystal growth dynamics, optimizing sputtering parameters for defect-free films, and developing next-generation thin-film technologies with enhanced optical and electronic properties. This balance of purity, consistency, and deposition performance ensures their value across industrial manufacturing and scientific innovation.

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Properties

Reference & Citations

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Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	32
Crystal structure	Diamond
Electronic structure	Ar 3d¹⁰ 4s² 4p²
Valences shown	2,4
Atomic weight( amu )	72.59
Thermal neutron absorption cross-section( Barns )	2.3
Photo-electric work function( eV )	4.8
Natural isotope distribution( Mass No./% )	72/ 27.4
Natural isotope distribution( Mass No./% )	73/ 7.8
Natural isotope distribution( Mass No./% )	76/ 7.8
Natural isotope distribution( Mass No./% )	70/ 20.5
Natural isotope distribution( Mass No./% )	74/ 36.5
Atomic radius - Goldschmidt( nm )	0.139
Ionisation potential( No./eV )	4/ 45.7
Ionisation potential( No./eV )	3/ 34.22
Ionisation potential( No./eV )	1/ 7.90
Ionisation potential( No./eV )	5/ 93.5
Ionisation potential( No./eV )	2/ 15.93

Mechanical Properties

Element	Value
Hardness - Mohs	6.25
Material condition	Polycrystalline
Poisson's ratio	0.32
Bulk modulus( GPa )	73.9
Tensile modulus( GPa )	79.9

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	46x10⁶@22@22°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	33.9

Physical Properties

Element	Value
Boiling point( C )	2830
Density( gcm⁻³ )	5.32@20°C

Thermal Properties

Element	Value
Melting point( C )	937.4
Latent heat of evaporation( J g⁻¹ )	4516
Latent heat of fusion( J g⁻¹ )	465
Specific heat( J K⁻¹ kg⁻¹ )	322@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	60.2@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	5.75@0-100°C