Copper Thin Film Disk

Copper Thin Film Disk offers precise control over electrical conductivity, surface smoothness, and layer uniformity, making it indispensable in high-performance electronics and data storage applications. With engineered crystallinity and low defect density, it supports efficient thin-film deposition processes, enabling the production of stable, adherent, and conductive layers. Industries such as semiconductors, magnetic storage, and optoelectronics utilize copper thin film disks for interconnect fabrication, seed layers in microelectronics, and substrate preparation for magnetic recording media. Specific uses include high-frequency interconnect structures in integrated circuits, thin conductive coatings for photonic devices, and base layers for advanced magnetic disk drives. In research, copper thin film disks facilitate studies into novel interconnect materials, next-generation storage media, and nanoscale conductivity optimization. Their high purity, stability, and processing versatility cement their role as a cornerstone material for both industrial manufacturing and scientific advancement.

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Tolerance

Properties

Reference & Citations

each

Tolerances

Thin Film

Thickness		±30%

Disk

Diameter		±20%

Material Properties for Metals

Atomic Properties

Element	Value
Atomic number	29
Crystal structure	Face centred cubic
Electronic structure	Ar 3d¹⁰ 4s¹
Valences shown	1, 2
Atomic weight( amu )	63.546
Thermal neutron absorption cross-section( Barns )	3.8
Photo-electric work function( eV )	4.5
Natural isotope distribution( Mass No./% )	65/ 30.8
Natural isotope distribution( Mass No./% )	63/ 69.2
Atomic radius - Goldschmidt( nm )	0.128
Ionisation potential( No./eV )	4/ 55.2
Ionisation potential( No./eV )	6/ 103
Ionisation potential( No./eV )	1/ 7.73
Ionisation potential( No./eV )	5/ 79.9
Ionisation potential( No./eV )	3/ 36.8
Ionisation potential( No./eV )	2/ 20.29

Mechanical Properties

Element	Value
Material condition	Soft
Material condition	Hard
Poisson's ratio	0.343
Poisson's ratio	0.343
Bulk modulus( GPa )	137.8
Bulk modulus( GPa )	137.8
Tensile modulus( GPa )	129.8
Tensile modulus( GPa )	129.8
Izod toughness( J m⁻¹ )	68
Izod toughness( J m⁻¹ )	58
Hardness - Vickers( kgf mm⁻² )	87
Hardness - Vickers( kgf mm⁻² )	49
Tensile strength( MPa )	314
Tensile strength( MPa )	224
Yield strength( MPa )	270
Yield strength( MPa )	54

Electrical Properties

Element	Value
Electrical resistivity( µOhmcm )	1.69@20@20°C
Temperature coefficient( K⁻¹ )	0.0043@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV )	0.76

Physical Properties

Element	Value
Boiling point( C )	2567
Density( gcm⁻³ )	8.96@20°C

Thermal Properties

Element	Value
Melting point( C )	1083
Latent heat of evaporation( J g⁻¹ )	4796
Latent heat of fusion( J g⁻¹ )	205
Specific heat( J K⁻¹ kg⁻¹ )	385@25°C
Thermal conductivity( W m⁻¹ K⁻¹ )	401@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ )	17@0-100°C