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Copper Thin Film Disk (Mylar® Backing)

Available Configurations

Properties common to all products in this list

Composition: Cu Form: Thin Film Material: Copper CAS Number: 7440-50-8 Commodity: Metals Purity: 99.99%
Copper Thin Film Disk offers precise control over electrical conductivity, surface smoothness, and layer uniformity, making it indispensable in high-performance electronics and data storage applications. With engineered crystallinity and low defect density, it supports efficient thin-film deposition processes, enabling the production of stable, adherent, and conductive layers. Industries such as semiconductors, magnetic storage, and optoelectronics utilize copper thin film disks for interconnect fabrication, seed layers in microelectronics, and substrate preparation for magnetic recording media. Specific uses include high-frequency interconnect structures in integrated circuits, thin conductive coatings for photonic devices, and base layers for advanced magnetic disk drives. In research, copper thin film disks facilitate studies into novel interconnect materials, next-generation storage media, and nanoscale conductivity optimization. Their high purity, stability, and processing versatility cement their role as a cornerstone material for both industrial manufacturing and scientific advancement.
Starting at $1,090.00 each
No Minimum order Approx. 2 weeks leadtime Free technical support *Free delivery worldwide

Material Properties

Atomic Properties
Element Value
Atomic number 29
Crystal structure Face centred cubic
Electronic structure Ar 3d¹⁰ 4s¹
Valences shown 1, 2
Atomic weight( amu ) 63.546
Thermal neutron absorption cross-section( Barns ) 3.8
Photo-electric work function( eV ) 4.5
Natural isotope distribution( Mass No./% ) 65/ 30.8
Natural isotope distribution( Mass No./% ) 63/ 69.2
Atomic radius - Goldschmidt( nm ) 0.128
Ionisation potential( No./eV ) 4/ 55.2
Ionisation potential( No./eV ) 6/ 103
Ionisation potential( No./eV ) 1/ 7.73
Ionisation potential( No./eV ) 5/ 79.9
Ionisation potential( No./eV ) 3/ 36.8
Ionisation potential( No./eV ) 2/ 20.29
Mechanical Properties
Element Value
Material condition Soft
Material condition Hard
Poisson's ratio 0.343
Poisson's ratio 0.343
Bulk modulus( GPa ) 137.8
Bulk modulus( GPa ) 137.8
Tensile modulus( GPa ) 129.8
Tensile modulus( GPa ) 129.8
Izod toughness( J m⁻¹ ) 68
Izod toughness( J m⁻¹ ) 58
Hardness - Vickers( kgf mm⁻² ) 87
Hardness - Vickers( kgf mm⁻² ) 49
Tensile strength( MPa ) 314
Tensile strength( MPa ) 224
Yield strength( MPa ) 270
Yield strength( MPa ) 54
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 1.69@20°C
Temperature coefficient( K⁻¹ ) 0.0043@0-100°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) 0.76
Physical Properties
Element Value
Boiling point( C ) 2567
Density( gcm⁻³ ) 8.96@20°C
Thermal Properties
Element Value
Melting point( C ) 1083
Latent heat of evaporation( J g⁻¹ ) 4796
Latent heat of fusion( J g⁻¹ ) 205
Specific heat( J K⁻¹ kg⁻¹ ) 385@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 401@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 17@0-100°C
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Available Configurations

Properties common to all products in this list

Composition: Cu Form: Thin Film Material: Copper CAS Number: 7440-50-8 Commodity: Metals Purity: 99.99%

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Tolerances

Thin Film
Thickness ±30%

Tolerances

Disk
Diameter ±20%