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Carbon Sputtering Target - T 0.25mm Ø 50mm

Carbon Sputtering Target is valued for its high purity, chemical inertness, and ability to form uniform, adherent thin films, making it an essential component in physical vapor deposition (PVD) processes. With precise control over microstructure and low contamination levels, it enables the production of diamond-like carbon (DLC) coatings, amorphous carbon films, and carbon-doped functional layers. Industries such as data storage, optics, and semiconductor manufacturing employ carbon sputtering targets in the fabrication of hard disk overcoats, optical interference layers, and semiconductor passivation films. Specific technological benefits include low-friction DLC coatings with coefficients as low as 0.2, high-density magnetic granular films for next-generation storage media, and carbon interlayers in solar cell stacks to improve adhesion and barrier performance. Innovations in sputtering methods, including neon-based plasma processes and CNT-enhanced bonding agents, have improved deposition rates, film density, and substrate adhesion. These advances solidify Carbon Sputtering Target as a critical enabler of precision thin-film engineering across high-performance industrial and research applications.
Formula: C
Percentage Purity: 99.997%
Thickness: 0.25mm
Diameter: 50mm
CAS Number: 7440-44-0
UOM Code: 720-862-27
Legacy Code: C 009025
Distributor Code:
GF72086227
SKU: 1000037597
Product Code: C-00-ST-000125
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Material Properties for Metals

Atomic Properties
Element Value
Atomic number 6
Crystal structure Hexagonal/Diamond
Electronic structure He 2s² 2p²
Valences shown 2, 3, 4
Atomic weight( amu ) 12.011
Thermal neutron absorption cross-section( Barns ) 0.0034
Photo-electric work function( eV ) 4.8
Natural isotope distribution( Mass No./% ) 12/ 98.89
Natural isotope distribution( Mass No./% ) 13/ 1.11
Atomic radius - Goldschmidt( nm ) 0.077
Ionisation potential( No./eV ) 6/ 490
Ionisation potential( No./eV ) 4/ 64.5
Ionisation potential( No./eV ) 1/ 11.26
Ionisation potential( No./eV ) 3/ 47.9
Ionisation potential( No./eV ) 2/ 24.38
Ionisation potential( No./eV ) 5/ 392
Mechanical Properties
Element Value
Hardness - Mohs 0.5-1
Hardness - Mohs 10
Material condition Diamond
Material condition Graphite
Bulk modulus( GPa ) 33
Bulk modulus( GPa ) 542
Tensile modulus( GPa ) 4.8
Electrical Properties
Element Value
Electrical resistivity( µOhmcm ) 1375@0°C
Thermal emf against Pt (cold 0C - hot 100C)( mV ) 0.7
Physical Properties
Element Value
Boiling point( C ) 5000
Density( gcm⁻³ ) 2.25@20°C
Thermal Properties
Element Value
Melting point( C ) 3650
Specific heat( J K⁻¹ kg⁻¹ ) 712@25°C
Thermal conductivity( W m⁻¹ K⁻¹ ) 80-240@0-100°C
Coefficient of thermal expansion( x10⁻⁶ K⁻¹ ) 0.6-4.3@0-100°C
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