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Index of Materials - Boron - Dopant




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DI001040Carbon - Diamond Film,    
Thickness:0.002mm, Condition:Ultrananocrystalline diamond (UNCD), Condition:Lightning 25, Dopant:Boron, Substrate:Niobium
SI002012Silicon Single Crystal,    
Oriented:(100), Thickness:0.38mm, Diameter:76.2mm, Purity:99.999%, Dopant:Boron, Electrical type:P-type
SI002013Silicon Single Crystal,    
Oriented:(111), Thickness:0.38mm, Diameter:76.2mm, Purity:99.999%, Dopant:Boron, Electrical type:P-type
SI002080Silicon Single Crystal,    
Oriented:(111), Thickness:1.0mm, Diameter:57mm, Purity:99.999%, Dopant:Boron, Electrical type:P-type

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